TB2600M-13

TB0640M DIODES | Alldatasheet

Document overview

• Manufacturer or author: IT Staff Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• 50A Peak Pulse Current @ 10/1000ms
• 250A Peak Pulse Current @ 8/20ms
• 58 - 320V Stand-Off Voltages
• Oxide-Glass Passivated Junction
• Bi-Directional Protection In a Single Device
• High Off-State impedance and Low On-State Voltage Mechanical Data
• Case: SMB, Molded Plastic
• Plastic Material: UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020A
• Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208
• Polarity: None; Bi-Directional Devices Have No Polarity Indicator
• Weight: 0.093 grams (approx.)
• Marking: Date Code and Marking Code (See Page 4)
• Ordering Information: See Page 4 Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. B A C D FH E G Characteristic Symbol Value Unit Non-Repetitive Peak Impulse Current @10/1000us Ipp 50 A Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 30 A Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Lead RqJL 20 °C/W Thermal Resistance, Junction to Ambient RqJA 100 °C/W Typical Positive Temperature Coefficient for Breakdown Voltage DVBR/DTj 0.1 %/°C SMB Dim Min Max A 4.06 4.57 B 3.30 3.94 C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 300 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 150 10/700 us ITU-T, K20/K21 100 10/560 us FCC Part 68 75 10/1000 us GR-1089-CORE 50

0 TIME

I , PEAK PULSE CURRENT (%)PP Peak Value (I )pp Half Value t = rise time to peak valuer t = decay time to half valuep tr tp TCUDORP WEN UNDER DEVELOPMENT

DS30361 Rev. 2 - 1 2 of 4 TB0640M - TB3500M Electrical Characteristics @ TA = 25°C unless otherwise specified Part Number Rated Repetitive Off-State Voltage Off-State Leakage Current @ VDRM Breakover Voltage On-State Voltage @ IT = 1A Breakover Current IBO Holding Current IH Off-State Capacitance Marking Code VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640M 58 5 77 3.5 50 800 150 800 140 T064M TB0720M 65 5 88 3.5 50 800 150 800 140 T072M TB0900M 75 5 98 3.5 50 800 150 800 140 T090M TB1100M 90 5 130 3.5 50 800 150 800 90 T110M TB1300M 120 5 160 3.5 50 800 150 800 90 T130M TB1500M 140 5 180 3.5 50 800 150 800 90 T150M TB1800M 160 5 220 3.5 50 800 150 800 90 T180M TB2300M 190 5 265 3.5 50 800 150 800 60 T230M TB2600M 220 5 300 3.5 50 800 150 800 60 T260M TB3100M 275 5 350 3.5 50 800 150 800 60 T310M TB3500M 320 5 400 3.5 50 800 150 800 60 T350M Symbol Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current NOTE: 1 VT On state voltage IPP Peak pulse current CO Off-state capacitance NOTE: 2 Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. IBO VBR VDRM VT VBO IH I V IBR IDRM IPP TCUDORP WEN UNDER DEVELOPMENT

DS30361 Rev. 2 - 1 3 of 4 TB0640M - TB3500M 0.9 T , JUNCTION TEMPERATURE (°C)J Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature V = (T )BR J V = (T = 25°C)BR J 0.95 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 175 NORMALIZED BREAKDOWN VOLTAGE 1.05 0.95 -50 NORMALIZED BREAKDOWN VOLTAGE T , JUNCTION TEMPERATURE (ºC)J Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.1 -25 0 755025 125100 175150 V = (T )BO J V = (T = 25°C)BO J 100 1 1.5 32.52 43.5 54.5 I , ON-STATE CURRENT (A)T V , ON-STATE VOLTAGE (V)T Fig. 4 On-State Current vs. On-State Voltage T = 25°Cj I , OFF-STATE CURRENT (uA)(DRM) T , JUNCTION TEMPERATURE (°C)J Fig. 1 Off-State Current vs. Junction Temperature 0.001 0.01 0.1 100 -25 0 25 50 75 100 125 150 V = 50VDRM 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.4 1.3 1.2 -50 -25 0 25 50 10075 125 NORMALIZED HOLDING CURRENT T , JUNCTION TEMPERATURE (°C)J Fig. 5 Relative Variation of Holding Current vs. Junction Temperature I = (T )H J I = (T = 25°C)H J 0.1 1 10 100 NORMALIZED CAPACITANCE V , REVERSE VOLTAGE (V)R Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias C = (V )O R C = (V = 1V)O R T = 25°Cj f = 1 Mhz VRMS = 1V TCUDORP WEN UNDER DEVELOPMENT

DS30361 Rev. 2 - 1 4 of 4 TB0640M - TB3500M TCUDORP WEN Ordering Information (Note 3) Marking Information Date Code Key UNDER DEVELOPMENT Year 2002 2003 2004 Code 2 3 4 XXXXX YWW XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week Device Packaging Shipping TB0640M-13 TB0720M-13 TB0900M-13 TB1100M-13 TB1300M-13 TB1500M-13 TB1800M-13 TB2300M-13 TB2600M-13 TB3100M-13 TB3500M-13 SMB 3000/Tape & Reel