TB0640H SUNMATE | Alldatasheet

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100A Peak Pulse Current @ 10/1000ms 400A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and Low On-State Voltage Characteristic Symbol Value Unit Non-Repetitive Peak Impulse Current @10/1000us Ipp 100 A Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 50 A Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Lead RqJL 20 °C/W Thermal Resistance, Junction to Ambient RqJA 100 °C/W Typical Positive Temperature Coefficient for Breakdown Voltage DVBR/DTj 0.1 %/°C Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 500 8/20 us IEC 61000-4-5 400 10/160 us FCC Part 68 250 10/700 us ITU-T, K20/K21 200 10/560 us FCC Part 68 160 10/1000 us GR-1089-CORE 100

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I , PEAK PULSE CURRENT (%)PP Peak Value (I )pp Half Value t = rise time to peak valuer t = decay time to half valuep tr tp Maximum Ratings and Electrical Characteristics T A = 25/c176C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1 of 3 ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Mechanical Data Case: SMB/DO-214AA, Molded Plastic Weight: 0.093 grams (approx.) SMB(DO-214AA) Dim Min Max A B C 1.91 2.21 D 0.15 0.31 E 5.00 5.59 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm A B C D GH E J 3.30 3.94 4.06 4.70 A B C D GH E J THYRISTOR SURGE SUPPRESSORS

Electrical Characteristics @ TA = 25°C unless otherwise specified Part Number Rated Repetitive Off-State Voltage Off-State Leakage Current @ VDRM Breakover Voltage On-State Voltage @ IT = 1A Breakover Current IBO Holding Current IH Off-State Capacitance VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640H 58 5 77 3.5 50 800 150 800 200 TB0720H 65 5 88 3.5 50 800 150 800 200 TB0900H 75 5 98 3.5 50 800 150 800 200 TB1100H 90 5 130 3.5 50 800 150 800 120 TB1300H 120 5 160 3.5 50 800 150 800 120 TB1500H 140 5 180 3.5 50 800 150 800 120 TB1800H 160 5 220 3.5 50 800 150 800 120 TB2300H 190 5 265 3.5 50 800 150 800 80 TB2600H 220 5 300 3.5 50 800 150 800 80 TB3100H 275 5 350 3.5 50 800 150 800 80 TB3500H 320 5 400 3.5 50 800 150 800 80 Symbol Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current NOTE: 1 VT On state voltage IPP Peak pulse current CO Off-state capacitance NOTE: 2 Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. IBO VBR VDRM VT VBO IH I V IBR IDRM IPP Marking Code T064H T072H T090H T110H T130H T150H T180H T230H T260H T310H T350H

0.9 T , JUNCTIONJ TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature V = (T )BR J V = (T = 25°C)BR J 0.95 1.05 1.1 1.15 -50 -25 0 25 50 75 100 125 150 175 NORMALIZED BREAKDOWN VOLTAGE N O R M A L I Z E D B R E A K O V E R V O L T A G E T J U N C T IO N TE M P E R A T U R E ºC J F ig R e la ti v e V a ri a ti o n o f B re a k o v e r V o lta g e v s J u n c ti o n T e m p e ra tu re V T BO J V T BO J 100 1 1.5 32.52 43.5 54.5 I , ON-STATE CURRENT (A)T V , ON-STATE VOLTAGE (V)T Fig. 4 On-State Current vs. On-State Voltage T = 25°Cj I , OFF-STATE CURRENT (uA)(DRM) T , JUNCTION TEMPERATURE (°C)J Fig. 1 Off-State Current vs. Junction Temperature 0.001 0.01 0.1 -25 0 25 50 75 100 125 150 V = 50VDRM 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.4 1.3 1.2 -50 -25 0 25 50 10075 125 NORMALIZED HOLDING CURRENT T , JUNCTION TEMPERATURE (°C)J Fig. 5 Relative Variation of Holding Current vs. Junction Temperature I = (T )H J I = (T = 25°C)H J 0.1 1 10 100 NORMALIZED CAPACITANCE V , REVERSE VOLTAGE (V)R Fig. 6 Relative Variation of Normalized Capacitance vs. Reverse Voltage Bias C = (V )O R C = (V = 1V)O R T = 25°Cj f = 1 Mhz VRMS = 1V