TAV2-14LN MINI | Alldatasheet

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Ultra Low Noise, Medium Current E-PHEMT Transistor Page 1 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits The Big Deal

  • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V
  • High Gain, 16.4 dB typ. at 6 GHz, 4V
  • High OIP3, +30.9 dBm typ. at 6 GHz, 4V
  • High P1dB, 18.8 dBm typ. at 6 GHz, 4V Product Overview Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys- tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. Key Features Feature Advantages Wideband, 0.05 to 10 GHz Usable to 12 GHz A single device covers many wireless communications bands including cellular, ISM, GSM, WCDMA, WiMax, WLAN, 5G and more. High IP3 vs. DC power consumption
  • +30.9 dBm at 6 GHz, 4V
  • +33.2 dBm at 12 GHz, 4V The TAV2-14LN+ matches industry leading IP3 performance relative to device size and power consumption. Enhanced linearity over a broad frequency range makes the device ideal for use in:
  • Driver amplifiers for complex waveform up converter paths
  • Drivers in linearized transmit systems Combines high gain (16.4 dB) with very low Noise Figure (0.7 dB) The unique combination of high gain and low Noise Figure results in lower overall system noise. 2 x 2mm 6-lead MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. 50Ω 0.05 to 10 GHz * Enhancement mode Pseudomorphic High Electron Mobility Transistor. TAV2-14LN+ 2mm x 2mm

Ultra Low Noise, Medium Current E-PHEMT Transistor Page 2 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits REV. OR ECO-001966 TAV2-14LN+ GY/RS/CP 200227 Product Features

  • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V,
  • Gain, 16.4 dB typ. at 6 GHz, 4V
  • High Output IP3, +30.9 dBm at 6 GHz, 4V
  • Output Power at 1dB comp., +18.8 dBm at 6 GHz, 4V
  • External biasing and matching required
  • Usable to 12 GHz Typical Applications
  • 5G
  • Cellular
  • ISM
  • GSM
  • WCDMA
  • WiMax
  • WLAN
  • UNII and HIPERLAN Function Pin Number Description RF-IN 2 Gate used for RF input RF-OUT 5 Drain used for RF output GND 1,3,4,6 & Paddle Source terminal, normally connected to ground. General Description Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys- tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. simplified schematic and pin description DRAIN GATE SOURCE 50Ω 0.05 to 10 GHz TAV2-14LN+ CASE STYLE: MC1630-1 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Generic photo used for illustration purposes only

E-PHEMT Transistor TAV2-14LN+ Page 3 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Electrical Specifications at TAMB=25°C Symbol Parameter Condition Min. Typ. Max. Units DC Specifications VTH Threshold Voltage VDS=4V, IDS=4 mA 0.37 V IDSS Saturated Drain Current VDS=4V, VGS=0 V — 2.0 — µA GM Transconductance VDS =4V, Gm =∆IDS/∆VGS, ∆VGS = VGS2-VGS1, VGS2=0.7V, VGS1=0.6V ∆IDS =(IDS at VGS2)-(IDS at VGS1) — 192 — mS IGSS Gate leakage Current VGD=VGS=-3V — 1.0 µA Parameter Condition (GHz) VDS = 4V1, IDS = 40mA VDS = 2V1 IDS = 20mA VS = 5V2 VS = 3V2 Units Gain 0.05 21 23.4 25.7 22 — — dB 12 — 10.2 — 10 — — Input Return Loss dB 6 7 6 11 10 8 7 6 15 12 10 7 7 8 7 12 8 7 — — Output Return Loss 0.05 5 5 — — dB 6 13 13 7 7 8 20 17 8 9 10 20 17 7 7 12 19 16 — — P1dB3 0.05 17.7 13.3 — — dBm 6 18.8 13.1 12.6 8.5 8 19.1 13.4 11.2 7.4 10 19.4 13.5 13.4 10.2 12 19.1 13 — — OIP3 Pout=5dBm/Tone 0.05 27.1 22.8 — — dBm 6 30.9 24.9 25.9 20.8 8 31.6 25.9 25.4 18.6 10 33.0 28.5 27.0 21.8 12 33.2 29.0 — — Noise Figure 0.05 2.5 0.7 — — dB 6 0.7 0.6 0.8 0.7 8 0.7 0.6 1.0 0.8 10 0.8 0.7 1.0 0.7 12 1.0 0.8 — — IDS DC 40 20 54 23 mA VGS DC 0.44 0.65 0.72 0.58 — — V 1. Measured in test board TB-TAV2-14LN+. See Fig 1. 2. Measured in eval board TB-TAV2-14LNE+ (designed for 6-10 GHz). See Fig. 2. 3. Drain current bias allowed to increase during compression measurement. RF & DC Specifications, Z0=50 Ohms

E-PHEMT Transistor TAV2-14LN+ Page 4 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Absolute Maximum Ratings4 Symbol Parameter Max. Units VDS Drain-Source Voltage 5 V VGS Gate-Source Voltage at VDS=4V -5 &1 V IDS Drain Current at VDS=4V 65 mA IGS Gate Current 15 µA PDISS Total Dissipated Power 325 mW PIN RF Input Power 18 (5-minute max.) 15 (continuous) dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C θjc Thermal Resistance 170 °C/W Fig 1. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Test Board TB-TAV2-14LN+) Gain, Output power at 1dB compression (P1dB), Noise Figure and output IP3 (OIP3) are measured using Agilent’s Microwave Network Analyzer N5242A PNA-X. Conditions: 1. Drain voltage (with reference to source, VDS)= 2V&4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone at output. 5. No external matching components used. Characterization Test Circuit Fig 2. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Application test board TB-TAV2-14LNE+) Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure measured using Agilent’s microwave network analyzer N5242A PNA-X. Conditions: 1. Supply voltage, VS=3V&5V 2. Gain and Return loss: Pin= -25dBm 3. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 5dBm/ tone at output. 4. Operation of this device above any one of these parameters may cause permanent damage. 5. Assumes DC quiescent conditions. 6. IGS is limited to 15µA during test. Application Test Circuit

E-PHEMT Transistor TAV2-14LN+ Page 5 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ESD Rating Human Body Model (HBM): Class 0 (50V to 250V) in accordance with ANSI/ESD STM 5.1 - 2001 MSL Test Flow Chart Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Start Finish Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style MC1630-1 Plastic package, exposed paddle, lead finish: Matte-Tin Tape & Reel F55 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K devices Suggested Layout for PCB Design PL-659 Evaluation Board TB-TAV2-14LN+ & TB-TAV2-14LNE+ Environmental Ratings ENV08T1 Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Product Marking MCL T214 Marking may contain other features or characters for internal lot control

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 2.00V, Id = 20mA @ Temperature = +25°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 1 of 6

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 4.00V, Id = 40mA @ Temperature = +25°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 2 of 6

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 2.00V, Id = 20mA @ Temperature = -45°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 3 of 6

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 4.00V, Id = 40mA @ Temperature = -45°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 4 of 6

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 2.00V, Id = 20mA @ Temperature = +85°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 5 of 6

Definitions: Input Return Loss = -S11 (dB) Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Vd = 4.00V, Id = 40mA @ Temperature = +85°C (MHz) (dB) (dB) (dB) (dB) K Measure (dBm) (dBm) (dB) IP-3 Output 1dB Comp. Output Noise FigureFREQ Gain Isolation Input Return Loss Output Return Loss Stability REV. OR TAV2-14LN+ 4/20/2020 Page 6 of 6

Typical Performance Curves 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 GAIN (dB) FREQUENCY (MHz) GAIN vs. FREQUENCY & TEMPERATURE INPUT POWER = -25.00dBm, Vd = 4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 GAIN (dB) FREQUENCY (MHz) GAIN vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25.00dBm, Temperature = +25°C 2.00V 4.00V 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 ISOLATION (dB) FREQUENCY (MHz) ISOLATION vs. FREQUENCY & TEMPERATURE INPUT POWER = -25.00dBm, Vd = 4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 ISOLATION (dB) FREQUENCY (MHz) ISOLATION vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25.00dBm, Temperature = +25°C 2.00V 4.00V 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 INPUT RETURN LOSS (dB) FREQUENCY (MHz) INPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = -25.00dBm, Vd = 4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 INPUT RETURN LOSS (dB) FREQUENCY (MHz) INPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25.00dBm, Temperature = +25°C 2.00V 4.00V 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 OUTPUT RETURN LOSS (dB) FREQUENCY (MHz) OUTPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = -25.00dBm, Vd = 4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 OUTPUT RETURN LOSS (dB) FREQUENCY (MHz) OUTPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25.00dBm, Temperature = +25°C 2.00V 4.00V REV. OR TAV2-14LN+ 4/20/2020 Page 1 of 2

Typical Performance Curves 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 OUTPUT IP3 (dBm) FREQUENCY (MHz) OUTPUT IP3 vs. FREQUENCY & TEMPERATURE OUTPUT POWER = 5.00dBm, Vd =4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 OUTPUT IP3 (dBm) FREQUENCY (MHz) OUTPUT IP3 vs. FREQUENCY & DEVICE VOLTAGE OUTPUT POWER = 5.00dBm, Temperature = +25°C 2.00V 4.00V 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 P1dB (dBm) FREQUENCY (MHz) P1dB vs. FREQUENCY & TEMPERATURE Vd = 4.00V -45°C +25°C +85°C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 P1dB (dBm) FREQUENCY (MHz) P1dB vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.00V 4.00V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 NOISE FIGURE (dB) FREQUENCY (MHz) NOISE FIGURE vs. FREQUENCY & TEMPERATURE Vd = 4.00V -45°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 NOISE FIGURE (dB) FREQUENCY (MHz) NOISE FIGURE vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25°C 2.00V 4.00V -0.010 -0.008 -0.006 -0.004 -0.002 0.000 0.002 0.004 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 (dB/°C) FREQUENCY (MHz) GAIN VARIANTS VS FREQUENCY & TEMPERATURE INPUT POWER = -25.00dBm, Vd = 4.00V +25 to +85 -45 to +25 -45 to +85 REV. OR TAV2-14LN+ 4/20/2020 Page 2 of 2

98-MC Rev.: H (03/05/18) M165325 File: 98-MC. docx Sheet 2 of 5 This document and its contents are the property of Mini-Circuits PCB Land Pattern CASE #. A B C D E F G H J K L M N P MC1630-1 .079 (2.00) .079 (2.00) .039 (1.00) .047 (1.20) .024 (.60) .010 (.25) .014 (.35) .026 (.65) .008 (.20) .002 (.05) .106 (2.70) .049 (1.25) .026 (.65) .031 (.80) CASE #. Q R WT, GRAM MC1630-1 .012 (.30) .012 (.30) .006 Notes: 1. Case material: Plastic. 2. Termination finish: For RoHS Case Styles: Tin-Silver over Nickel plat ed or Matte-Tin plated (See Data sheet). All models, (+) suffix. 3. Lead #1 identifier shall be located in the cross-hatched area shown. Identifier may be either a molded or marked feature. Outline Dimensions MC1630-1 Suggested Layout, Tolerance to be within ±.002

98-TR-F66 Rev.: B (04/01/12) M134929 File: 98-TR-F66.doc Sheet 1 of 1 This document and its contents are the property of Mini-Circuits. Tape & Reel Packaging TR-F66 Tape Width, mm Device Cavity Pitch, mm Reel Size, inches Devices per Reel see note 100 200 Small quantity standard 500 8 4

7 Standard 1000, 2000

Note: Please consult individual model data sheet to determine device per reel availability. Mini-Circuits carrier tape materials provide protection from ESD (Electro-Static Discharge) during handling and transportation. Tapes are static dissipative and comply with industry standards EIA-481/EIA-541. Go to: www.minicircuits.com/pages/pdfs/tape.pdf

Environmental Specifications All Mini-Circuits products are manufactured under exacting quality assurance and control standards, and are capable of meeting published specifications after being subjected to any or all of the following physical and environmental test. Specification Test/Inspection Condition Reference/Spec ENV08T1 Operating Temperature -40° to 85°C Ambient Environment Individual Model Data Sheet Storage Temperature -55° to 100° C or -65° to 150° Ambient Environment Individual Model Data Sheet Thermal Shock -55° to 100°C, 100 cycles MIL-STD-202, Method 107, Condition A-3, except +100°C Mechanical Shock 1.5Kg, 0.5 ms, 5 shock pulses, Y1 direction only MIL-STD-883, Method 2002, Condition B, except Y1 direction only Vibration (Variable Frequency) 50g peak MIL-STD-883, Method 2007, Condition B Autoclave 15 psig, 100% RH, 121°C, 96 hours JESD22-A102, Condition C HAST 130°C, 85% RH, 96 hours JESD22-A110 Solderability 10X Magnification J-STD-002, Para 4.2.5, Test S, 95% Coverage Solder Reflow Heat Sn-Pb Eutetic Process: 240°C peak Pb-Free Process: 260°C peak J-STD-020, Table 4-1, 4-2 and 5-2; Figure 5-1 Moisture Sensitivity: Level 1 Bake at 125°C for 24 hours Soak at 85°C/85% RH for 168 hours, Reflow 3 cycles at 260°C peak J-STD-020 Marking Resistance to Solvents Isopropyl alcohol + mineral spirits at 25°C; terpene defluxer at 25°C; distilled water + proylene glycol monomethyl ether + MIL-STD-202, Method 215 This document and its contents are the property of Mini-Circuits. Rev:ENV08T1 B 02/18/11 File:M130782 ENV08T1.pdf Page: 1

Environmental Specifications All Mini-Circuits products are manufactured under exacting quality assurance and control standards, and are capable of meeting published specifications after being subjected to any or all of the following physical and environmental test. Specification Test/Inspection Condition Reference/Spec ENV08T1 monoethanolamine at 63°C to 70°C This document and its contents are the property of Mini-Circuits. Rev:ENV08T1 B 02/18/11 File:M130782 ENV08T1.pdf Page: 2