TAV-541

TAV-541 MINI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

Ultra Low Noise, High Current E-PHEMT Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Page 1 of 13 * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output TAV-541+ REV. B M123887 ED-13285 TAV-541+ 150319 0.45-6GHz CASE STYLE: FG873 PRICE: $1.39 ea. QTY . (20) GATE S OUR C E DR AIN GATE DR AIN S OUR C ES OUR C E Product Features

• Low Noise Figure, 0.5 dB
• Gain, 17 dB at 2 GHz
• High Output IP3, +33 dBm
• Output Power at 1dB comp., +19 dBm
• High Current, 60mA
• Wide bandwidth
• External biasing and matching required Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN General Description TAV-541+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be- low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a com- plete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. simplified schematic and pin description +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Symbol Parameter Condition Min. Typ. Max. Units DC Specifications VGS Operational Gate Voltage VDS=3V, IDS=60 mA 0.37 0.48 0.69 V VTH Threshold Voltage VDS=3V, IDS=4 mA 0.18 0.26 0.38 V IDSS Saturated Drain Current VDS=3V, VGS=0 V — 1.0 5.0 µA GM Transconductance VDS=3V, Gm=∆ IDS/∆VGS ∆VGS=VGS1-VGS2 VGS1=VGS at IDS=60 mA VGS2=VGS1+0.05V 230 392 560 mS IGSS Gate leakage Current VGD=VGS=-3V 200 µA RF Specifications, Z0=50 Ohms (Figure 1) NF(1) Noise Figure VDS=3V, IDS=60 mA f=0.9 GHz 0.4 — dB f=2.0 GHz 0.5 0.9 f=3.9 GHz 1.0 — f=5.8 GHz 1.8 — VDS=4V, IDS=60 mA f=2.0 GHz 0.4 Gain Gain VDS=3V, IDS=60 mA f=0.9 GHz — 23.8 — dB f=2.0 GHz 15.5 17.9 18.9 f=3.9 GHz — 12.7 — f=5.8 GHz 9.5 — VDS=4V, IDS=60 mA f=2.0 GHz — 18.0 OIP3 Output IP3 VDS=3V, IDS=60 mA f=0.9 GHz — 32.1 dBm f=2.0 GHz 30.0 33.6 f=3.9 GHz — 34.2 f=5.8 GHz — 32.9 VDS=4V, IDS=60 mA f=2.0 GHz 35.9 P1dB(2) Power output at 1 dB Compression VDS=3V, IDS=60 mA f=0.9 GHz 18.9 dBm f=2.0 GHz 19.1 f=3.9 GHz 19.4 f=5.8 GHz 19.6 VDS=4V, IDS=60 mA f=2.0 GHz 21.1 Notes: (1) Includes test board loss (measured in test board TB-154). (2) Drain current bias allowed to increase during compression measurement. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) IGS is limited to 2 mA during test. Absolute Maximum Ratings(3) Symbol Parameter Max. Units VDS(4) Drain-Source Voltage 5 V VGS(4) Gate-Source Voltage -5 to 0.7 V VGD(4) Gate-Drain Voltage -5 to 0.7 V IDS(4) Drain Current 120 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 550 mW PIN(5) RF Input Power 17 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C ΘJC Thermal Resistance 112 °C/W Electrical Specifications at TAMB=25°C, Frequency 0.45 to 6 GHz

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-154 (Material: Rogers 4350, Thickness: 0.02”) Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-154) Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A. Conditions: 1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 5. No external matching components used. Characterization Test Circuit

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Typical Performance Curves NOISE FIGURE vs IDS @ 0.9 GHz (1) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) NOISE FIGURE (dB) VDS=3V VDS=4V GAIN vs IDS @ 2 GHz (1) 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) GAIN (dB) VDS=3V VDS=4V NOISE FIGURE vs IDS @ 2 GHz (1) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) NOISE FIGURE (dB) VDS=3V VDS=4V (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure (4) Draing current was allowed to increase during compression measurement. I-V (VGS=0.1V PER STEP) (2) 100 120 VDS (V) IDS (mA) 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V F Min vs IDS @ 2 GHz (3) 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) F MIN (dB) VDS=2V VDS=3V VDS 4V F Min vs IDS @ 0.9 GHz (3) 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) F MIN (dB) VDS=2V VDS=3V VDS=4V

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure (4) Draing current was allowed to increase during compression measurement. GAIN vs IDS @ 0.9 GHz (1) 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) GAIN (dB) VDS=3V VDS=4V P1dB vs IDS @ 2 GHz (1,4) 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) P1dB (dBm) VDS=3V VDS=4V P1dB vs IDS @ 0.9 GHz (1,4) 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) P1dB (dBm) VDS=3V VDS=4V NF vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=60mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FREQUENCY (GHz) NOISE FIGURE (dB) -40°C +25°C +85°C OIP3 vs IDS @ 0.9 GHz (1) 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) OIP3 (dBm) VDS=3V VDS=4V OIP3 vs IDS @ 2GHz (1) 10 15 20 25 30 35 40 45 50 55 60 IDS (mA) OIP3 (dBm) VDS=3V VDS=4V

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=60mA FREQUENCY (GHz) GAIN (dB) -45°C +25°C +85°C NF vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=60mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FREQUENCY (GHz) NOISE FIGURE (dB) -40°C +25°C +85°C GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=60mA FREQUENCY (GHz) GAIN (dB) -45°C +25°C +85°C OIP3 vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=60mA FREQUENCY (GHz) OIP3 (dBm) -45°C +25°C +85°C P1dB vs FREQUENCY & TEMPERATURE (1,4) @ VDS=3V, IDS=60mA FREQUENCY (GHz) P1dB (dBm) -45°C +25°C +85°C OIP3 vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=60mA FREQUENCY (GHz) OIP3 (dBm) -45°C +25°C +85°C (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure (4) Draing current was allowed to increase during compression measurement.

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits P1dB vs FREQUENCY & TEMPERATURE (1,4) @ VDS=4V, IDS=60mA FREQUENCY (GHz) P1dB (dBm) -45°C +25°C +85°C Notes: Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based NP noise parameter (NP) test system available from Maury Microwave. F Min, optimimum source reflection coefficient and noise resistance values are calculated values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to ar- rive at the presented data set. S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is at the device package leads, as shown in the picture. Reference Plane Location for S and Noise Parameters (see data in pages 8-11) (Refer to Application Note AN-60-040) F Min vs FREQ @ VDS=3V (3) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FREQUENCY (GHz) F MIN (dB) 40 mA 60 mA 80 mA Fig 3. Reference Plane Location (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure (4) Draing current was allowed to increase during compression measurement.

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Freq. (GHz) S11 S21 S12 S22 MSG/MAG (dB)Mag. Ang. Mag. Mag Typical S-parameters, VDS=3V and IDS=40 mA (Fig. 3) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY -15 -10 0 5 10 15 20 Frequency (GHz) MSG/MAG and S21 (dB) MSG/MAG S21(dB) Typical Noise Parameters, VDS=3V and IDS=40 mA (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Typical S-parameters, VDS=3V and IDS=60 mA (Fig. 3) Freq. (GHz) S11 S21 S12 S22 MSG/MAG (dB)Mag. Ang. Mag. Mag MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY -15 -10 0 5 10 15 20 Frequency (GHz) MSG/MAG and S21 (dB) MSG/MAG S21(dB) Typical Noise Parameters, VDS=3V and IDS=60 ma (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Typical S-parameters, VDS=3V and IDS=80 mA (Fig. 3) Freq. (GHz) S11 S21 S12 S22 MSG/MAG (dB)Mag. Ang. Mag. Mag MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY -15 -10 0 5 10 15 20 Frequency (GHz) MSG/MAG and S21 (dB) MSG/MAG S21(dB) Typical Noise Parameters, VDS=3V and IDS=80 mA (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Freq. (GHz) S11 S21 S12 S22 MSG/MAG Typical S-parameters, VDS=4V and IDS=60 mA (Fig. 3) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY -15 -10 0 5 10 15 20 Frequency (GHz) MSG/MAG and S21 (dB) MSG/MAG S21(dB) Typical Noise Parameters, VDS=4V and IDS=60 mA (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Product Marking ESD Rating Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Start MSL Test Flow Chart MCL YYWW White Ink Marking Body (Black) Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D Additional Detailed Technical Information Additional information is available on our web site www.minicircuits.com. To access this information enter the model number on our web site home page. Performance data, graphs, s-parameter data set (.zip file) Case Style: FG873 Plastic low profile 3mm x 3mm, lead finish: tin/silver/nickel Suggested Layout for PCB Design: PL-301 Tape & Reel: F68 Characterization Test Board: TB-154+ Environmental Ratings: ENV08T2

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Recommended Application Circuit VDS, V (nom) 3 4 IDS, mA (nom) 60mA 60mA R1 4320Ω 4320Ω R2 4320Ω 4320Ω R3 3570Ω 1210Ω R4 33.2Ω 16.7Ω Q1 MMBT3906* MMBT3906* Q2 MMBT3906* MMBT3906* C1 0.01µF 0.01µF C2 0.01µF 0.01µF L1 840nH 840nH L2 840nH 840nH GATE DRAIN C1 C2 INPUT MATCHING CIRCUIT (MUST PASS DC) OUTPUT MATCHING CIRCUIT (MUST PASS DC) Vcc (+5V DC) RF-IN RF-OUT DC BIAS CIRCUIT DUT L1 L2 SOURCE RF CIRCUIT * Fairchild Semiconductor™ part number ** Piconics™ part number CC45T47K240G5 Optimized Amplifier Circuits For band specific, drop-in modules, and as an alternative to designing circuits, please refer to Mini-Circuits TAMP and RAMP series models which are based upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and sta - bilization circuitry, without need for any external components.