TAR5SB15 TOSHIBA | Alldatasheet

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Technical content

Features

  • Low stand-by current
  • Overtemperature/overcurrent protection
  • Operation voltage range is wide.
  • Maximum output current is high.
  • Difference between input voltage and output voltage is low.
  • Small package. (SOT-23 5pin)
  • Ceramic capacitors can be used. Pin Assignments (top view) Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating ratings below the absolute maximum ratings. Do not use devices under conditions in which their absolute maximum ratings will be exceeded. Weight: 0.014 g (typ.) 1 3 2 VOUT VIN GND NOISE CONTROL Start of commercial production 2002-09

TAR5SB15~TAR5SB50 2014-03-01 2 List of Products Number and Marking Marking on the Product Products No. Marking Products No. Marking TAR5SB15 1B5 TAR5SB33 3B3 TAR5SB16 1B6 TAR5SB34 3B4 TAR5SB17 1B7 TAR5SB35 3B5 TAR5SB18 1B8 TAR5SB36 3B6 TAR5SB19 1B9 TAR5SB37 3B7 TAR5SB20 2B0 TAR5SB38 3B8 TAR5SB21 2B1 TAR5SB39 3B9 TAR5SB22 2B2 TAR5SB40 4B0 TAR5SB23 2B3 TAR5SB41 4B1 TAR5SB24 2B4 TAR5SB42 4B2 TAR5SB25 2B5 TAR5SB43 4B3 TAR5SB26 2B6 TAR5SB44 4B4 TAR5SB27 2B7 TAR5SB45 4B5 TAR5SB28 2B8 TAR5SB46 4B6 TAR5SB29 2B9 TAR5SB47 4B7 TAR5SB30 3B0 TAR5SB48 4B8 TAR5SB31 3B1 TAR5SB49 4B9 TAR5SB32 3B2 TAR5SB50 5B0 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VIN 15 V Output current IOUT 200 mA 200 (Note 1) Power dissipation PD 380 (Note 2) mW Operation temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperatur e/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta ge, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Ratintg Note 2: Mounted on a glass epoxy circuit board of 30 × 30 mm. Pad dimension of 50 mm

3 B 0

Example: TAR5SB30 (3.0 V output)

TAR5SB15~TAR5SB50 2014-03-01 3 TAR5SB15~TAR5SB22 Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage VOUT Please refer to the Output Voltage Accuracy table. Line regulation Reg･line VOUT + 1 V ≤ VIN ≤ 15 V, IOUT = 1 mA ⎯ 3 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA ⎯ 25 75 mV IB1 IOUT = 0 mA ⎯ 170 ⎯ Quiescent current IB2 I OUT = 50 mA ⎯ 550 850 μA Stand-by current IB (OFF) V CT = 0 V ⎯ ⎯ 0.1 μA Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA,

10 Hz ≤ f ≤ 100 kHz,

CNOISE = 0.01 μF, Ta = 25°C ⎯ 30 ⎯ μVrms Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ⎯ 100 ⎯ ppm/°C Input voltage VIN ⎯ 2.4 ⎯ 15 V Ripple rejection R.R. VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 μF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ 70 ⎯ dB Control voltage (ON) VCT (ON) ⎯ 1.5 ⎯ V IN V Control voltage (OFF) VCT (OFF) ⎯ ⎯ ⎯ 0.4 V Control current (ON) ICT (ON) V CT = 1.5 V ⎯ 3 10 μA Control current (OFF) ICT (OFF) V CT = 0 V ⎯ 0 0.1 μA TAR5SB23~TAR5SB50 Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage VOUT Please refer to the Output Voltage Accuracy table. Line regulation Reg･line VOUT + 1 V ≤ VIN ≤ 15 V, IOUT = 1 mA ⎯ 3 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA ⎯ 25 75 mV IB1 IOUT = 0 mA ⎯ 170 ⎯ Quiescent current IB2 I OUT = 50 mA ⎯ 550 850 μA Stand-by current IB (OFF) V CT = 0 V ⎯ ⎯ 0.1 μA Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 μF, Ta = 25°C ⎯ 30 ⎯ μVrms Dropout volatge VIN − VOUT IOUT = 50 mA ⎯ 130 200 mV Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ⎯ 100 ⎯ ppm/°C Input voltage VIN ⎯ VOUT + 0.2 V ⎯ 15 V Ripple rejection R.R. VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 μF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ 70 ⎯ dB Control voltage (ON) VCT (ON) ⎯ 1.5 ⎯ V IN V Control voltage (OFF) VCT (OFF) ⎯ ⎯ ⎯ 0.4 V Control current (ON) ICT (ON) V CT = 1.5 V ⎯ 3 10 μA Control current (OFF) ICT (OFF) V CT = 0 V ⎯ 0 0.1 μA

TAR5SB15~TAR5SB50 2014-03-01 4 Output Voltage Accuracy (VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Tj = 25°C) Product No. Symbol Min Typ. Max Unit TAR5SB15 1.44 1.5 1.56 TAR5SB16 1.54 1.6 1.66 TAR5SB17 1.64 1.7 1.76 TAR5SB18 1.74 1.8 1.86 TAR5SB19 1.84 1.9 1.96 TAR5SB20 1.94 2.0 2.06 TAR5SB21 2.04 2.1 2.16 TAR5SB22 2.14 2.2 2.26 TAR5SB23 2.24 2.3 2.36 TAR5SB24 2.34 2.4 2.46 TAR5SB25 2.43 2.5 2.57 TAR5SB26 2.53 2.6 2.67 TAR5SB27 2.63 2.7 2.77 TAR5SB28 2.73 2.8 2.87 TAR5SB29 2.83 2.9 2.97 TAR5SB30 2.92 3.0 3.08 TAR5SB31 3.02 3.1 3.18 TAR5SB32 3.12 3.2 3.28 TAR5SB33 3.21 3.3 3.39 TAR5SB34 3.31 3.4 3.49 TAR5SB35 3.41 3.5 3.59 TAR5SB36 3.51 3.6 3.69 TAR5SB37 3.6 3.7 3.8 TAR5SB38 3.7 3.8 3.9 TAR5SB39 3.8 3.9 4.0 TAR5SB40 3.9 4.0 4.1 TAR5SB41 3.99 4.1 4.21 TAR5SB42 4.09 4.2 4.31 TAR5SB43 4.19 4.3 4.41 TAR5SB44 4.29 4.4 4.51 TAR5SB45 4.38 4.5 4.62 TAR5SB46 4.48 4.6 4.72 TAR5SB47 4.58 4.7 4.82 TAR5SB48 4.68 4.8 4.92 TAR5SB49 4.77 4.9 5.03 TAR5SB50 VOUT 4.87 5.0 5.13 V

TAR5SB15~TAR5SB50 2014-03-01 5 Application Note 1. Recommended Application Circuit The figure above shows the recommended configuration for using a point regulator. Insert a capacitor for stable input/output operation. If the control function is not to be used, Toshiba reco mmend that the control pin (p in 1) be connected to the VCC pin. 2. Power Dissipation The power dissipation for board-mounted TAR5SBxx Series devices (rated at 380 mW) is measured using a board whose size and pattern are as shown below. When incorporating a device belonging to this series into your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input voltage, output current and ambient temperature. Tosh iba recommend that these devices should typically be derated to 70% to 80% of their absolute maximum power dissipation value. Thermal Resistance Evaluation Board Control Level Operation HIGH ON LOW OFF VIN NOISE 1 3 GND VOUT CONTROL 0.01 μF 1 μF 10 μF Circuit board material: glass epoxy, Circuit board dimension: 30 mm × 30 mm, Copper foil pad area: 50 mm2 (t = 0.8 mm) COUT C NOISE VIN VOUT CONTROL GND NOISE

TAR5SB15~TAR5SB50 2014-03-01 6 3. Ripple Rejection The devices of the TAR5SBxx Series feature a circuit with an excellent ripple rejection characteristic. Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops, the circuit is ideal for use in the RF blocks incorporated in all mobile telephones. 4. NOISE Pin TAR5SBxx Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitor between the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of 0.0047 μF or more between the NOISE pin and GND. The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE pin. Ripple Rejection − f TAR5SB28 Input Transient Response Frequency f (Hz) Time t (ms) Ripple rejection (dB) 10 100 1 k 10 k 100 k 300 k 10 μF 2.2 μF 1 μF VIN = 4.0 V, CNOISE = 0.01 μF, CIN = 1 μF, Vripple = 500 mVp−p, Iout = 10 mA, Ta = 25°C CNOISE − VN Turn On Waveform NOISE capacitance C NOISE (F) Time t (ms) Control voltage VCT (ON) (V) Output noise voltage V N ( μV) 0.001 μ 0.01 μ 1.0 μ TAR5S50 0.1 μ TAR5S30 TAR5S15 CIN = 1 μF, Cout = 10 μF, Iout = 10 mA, Ta = 25°C Output voltage VOUT (V) 01 45 8 1 0 Input voltage 2.8 V 2 3 6 7 9 Output voltage 3.1 V 3.4 V Ta = 25°C, CIN = 1 μF, Cout = 10 μF, CNOISE = 0.01 μF, VIN: 3.4 V → 3.1 V, Iout = 50 mA 4010 20 −10 0 90 30 60 50 80 70 Output voltage waveform Control voltage waveform CNOISE = 0.01 μF 1 μF 0.33 μF 0.1 μF CIN = 1 μF, Cout = 10 μF, Iout = 50 mA, Ta = 25°C

TAR5SB15~TAR5SB50 2014-03-01 7 5. Example of Characteristics when Ceramic Capacitor is Used Shown below is the stable operation area, where the output voltage does not oscillate, evaluated using a Toshiba evaluation circuit. The equivalent series resist ance (ESR) of the output capacitor and output current determines this area. TAR5SBxx Series devices operate stably even when a ceramic capacitor is used as the output capacitor. If a ceramic capacitor is used as the output capacito r and the ripple frequency is 30 kHz or more, the ripple rejection differs from that when a tantalum capacitor is used. This is shown below. Toshiba recommend that users check that devices operate stably under the intended conditions of use. Examples of safe operating area characteristics Evaluation Circuit for Stable Operating Area Ripple Rejection Characteristic (f = 10 kHz~300 kHz) (TAR5SB15)Stable Operating Area Output current I OUT ( m A ) (TAR5SB50)Stable Operating Area (TAR5SB28)Stable Operating Area Output current I OUT ( m A ) Output current I OUT ( m A ) Equivalent series resistance ESR ( Ω) Equivalent series resistance ESR ( Ω) Equivalent series resistance ESR ( Ω) Ripple rejection (dB) (TAR5SB30) Ripple Rejection – f Frequency f (Hz) TAR5SB** GND CIN Ceramic VIN = VOUT + 1 V CONTROL CNOISE = 0.01 μF ROUT ESR COUT Ceramic Capacitors used for evaluation Made by Murata C IN: GRM40B105K COUT: GRM40B105K/GRM40B106K Ceramic 2.2 μF 10 k 300 k 100 k Ceramic 10 μF Tantalum10 μF Tantalum 2.2 μF Tantalum 1 μF Ceramic 1 μF @VIN = 4.0 V, CNOISE = 0.01 μF, CIN = 1 μF, Vripple = 500 mVp-p, Iout = 10 mA, Ta = 25°C 1000 k 80 40 0.02 0.1 100 0 20 150 60 120 100 140 @VIN = 2.5 V, CNOISE = 0.01 μF, CIN = 1 μF, Cout = 1 μF~10 μF, Ta = 25°C Stable Operating Area 80 40 0.02 0.1 100 02 0 1 5 0 60 120 100 140 @VIN = 6.0 V, CNOISE = 0.01 μF, CIN = 1 μF, Cout = 1 μF~10 μF, Ta = 25°C Stable Operating Area 80 40 0.02 0.1 100 0 20 150 60 120 100 140 @VIN = 3.8 V, CNOISE = 0.01 μF, CIN = 1 μF, Cout = 1 μF~10 μF, Ta = 25°C Stable Operating Area

TAR5SB15~TAR5SB50 2014-03-01 8 Output voltage V OUT (V) Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB15) I OUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB18) I OUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB20) I OUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB21) I OUT – VOUT Output current I OUT ( m A ) (TAR5SB22) I OUT – VOUT Output current I OUT ( m A ) (TAR5SB23) I OUT – VOUT Output voltage V OUT (V) 1.4 1.5 1.6 VIN = 2.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 1.7 1.8 1.9 VIN = 2.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 1.9 2.0 2.1 VIN = 3.0 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 2.0 2.1 2.2 VIN = 3.1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 2.1 2.2 2.3 VIN = 3.2 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 2.2 2.3 VIN = 3.3 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40

TAR5SB15~TAR5SB50 2014-03-01 9 Output current I OUT ( m A ) (TAR5SB27) I OUT – VOUT Output voltage V OUT (V) VIN = 3.7 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 2.6 2.7 2.8 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB30) IOUT – VOUT Output voltage V OUT (V) VIN = 3.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 2.7 2.8 2.9 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB25) I OUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB31) I OUT – VOUT Output voltage V OUT (V) VIN = 3.9 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 2.8 2.9 0 50 100 150 Ta = 85°C −40 2.4 2.5 2.6 VIN = 2.6 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB28) I OUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB29) I OUT – VOUT Output voltage V OUT (V) VIN = 4.0 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 2.9 3.0 3.1 0 50 100 150 Ta = 85°C −40 3.0 3.1 3.2 VIN = 4.1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40

TAR5SB15~TAR5SB50 2014-03-01 10 Output current I OUT ( m A ) (TAR5SB32) IOUT – VOUT Output voltage V OUT (V) Output current I OUT ( m A ) (TAR5SB33) IOUT – VOUT Output voltage V OUT (V) VIN = 4.3 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 3.2 3.3 3.4 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB45) I OUT – VOUT Output voltage V OUT (V) VIN = 5.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 4.4 4.5 4.6 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB50) I OUT – VOUT Output voltage V OUT (V) VIN = 6.0 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 4.9 5.0 5.1 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB35) I OUT – VOUT Output voltage V OUT (V) VIN = 4.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 3.4 3.5 3.6 0 50 100 150 Ta = 85°C −40 Output current I OUT ( m A ) (TAR5SB48) I OUT – VOUT Output voltage 圧 V OUT ( V ) VIN = 5.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 4.7 4.8 4.9 0 50 100 150 Ta = 85°C −40 3.1 3.2 3.3 VIN = 4.2 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 50 100 150 Ta = 85°C −40

TAR5SB15~TAR5SB50 2014-03-01 11 Bias current I B (mA) Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB15) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB18) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB20) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB21) IB – VIN Input voltage V IN ( V ) (TAR5SB22) IB – VIN Input voltage V IN ( V ) (TAR5SB23) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1

TAR5SB15~TAR5SB50 2014-03-01 12 Input voltage V IN ( V ) (TAR5SB27) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 Input voltage V IN ( V ) (TAR5SB30) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 Input voltage V IN ( V ) (TAR5SB25) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB31) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB28) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 Input voltage V IN ( V ) (TAR5SB29) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1

TAR5SB15~TAR5SB50 2014-03-01 13 Input voltage V IN ( V ) (TAR5SB32) IB – VIN Bias current I B (mA) Input voltage V IN ( V ) (TAR5SB33) IB – VIN Bias current I B (mA) 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB45) IB – VIN Bias current I B (mA) 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB50) I B – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 0 5 10 15 IOUT = 150 mA 100 50 1 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB35) IB – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1 Input voltage V IN ( V ) (TAR5SB48) I B – VIN Bias current I B (mA) CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0 5 10 15 IOUT = 150 mA 100 50 1

TAR5SB15~TAR5SB50 2014-03-01 14 Output voltage V OUT (V) Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB15) VOUT – VIN Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB18) VOUT – VIN Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB20) VOUT – VIN Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB21) VOUT – VIN Input voltage V IN ( V ) (TAR5SB22) VOUT – VIN Input voltage V IN ( V ) (TAR5SB23) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms

TAR5SB15~TAR5SB50 2014-03-01 15 Input voltage V IN ( V ) (TAR5SB27) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB30) VOUT – VIN Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB25) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB31) VOUT – VIN Output voltage V OUT (V) Input voltage V IN ( V ) (TAR5SB28) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB29) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms

TAR5SB15~TAR5SB50 2014-03-01 16 Input voltage V IN ( V ) (TAR5SB33) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB32) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB45) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB50) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB48) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms Input voltage V IN ( V ) (TAR5SB35) VOUT – VIN Output voltage V OUT (V) 0 5 10 15 IOUT = 1 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms

TAR5SB15~TAR5SB50 2014-03-01 17 Output voltage V OUT (V) Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB15) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB18) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB20) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB21) VOUT – Ta Ambient temperature Ta (°C) (TAR5SB22) VOUT – Ta Ambient temperature Ta (°C) (TAR5SB23) VOUT – Ta Output voltage V OUT (V) −50 1.4 −25 0 25 100 75 50 1.45 1.5 1.55 1.6 VIN = 2.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 1.7 −25 0 25 100 75 50 1.75 1.8 1.85 1.9 VIN = 2.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 1.9 −25 0 25 100 75 50 1.95 2.0 2.05 2.1 VIN = 3.0 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 2.0 −25 0 25 100 75 50 2.05 2.1 2.15 2.2 VIN = 3.1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 2.1 −25 0 25 100 75 50 2.15 2.2 2.25 2.3 VIN = 3.2 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 2.2 −25 0 25 100 75 50 2.25 2.3 2.35 2.4 VIN = 3.3 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150

TAR5SB15~TAR5SB50 2014-03-01 18 Ambient temperature Ta (°C) (TAR5SB25) VOUT – Ta Output voltage V OUT (V) −50 2.4 −25 0 25 100 75 50 2.45 2.5 2.55 2.6 VIN = 3.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 Ambient temperature Ta (°C) (TAR5SB27) VOUT – Ta Output voltage V OUT (V) −50 2.6 −25 0 25 100 75 50 2.65 2.7 2.75 2.8 VIN = 3.7 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 Ambient temperature Ta (°C) (TAR5SB30) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB31) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB28) VOUT – Ta Output voltage V OUT (V) −50 2.7 −25 0 25 100 75 50 2.75 2.8 2.85 2.9 VIN = 3.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 50 mA 100 150 Ambient temperature Ta (°C) (TAR5SB29) VOUT – Ta Output voltage V OUT (V) −50 2.8 −25 0 25 100 75 50 2.85 2.9 2.95 3.0 VIN = 3.9 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 2.9 −25 0 25 75 50 2.95 3.0 3.05 3.1 VIN = 4 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 50 mA 100 100 150 −50 3.0 −25 0 25 100 75 50 3.05 3.1 3.15 3.2 VIN = 4.1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150

TAR5SB15~TAR5SB50 2014-03-01 19 Ambient temperature Ta (°C) (TAR5SB32) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB33) VOUT – Ta Output voltage V OUT (V) −50 3.2 −25 0 25 75 50 3.25 3.3 3.35 3.4 VIN = 4.3 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 100 150 Ambient temperature Ta (°C) (TAR5SB45) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB50) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB35) VOUT – Ta Output voltage V OUT (V) Ambient temperature Ta (°C) (TAR5SB48) VOUT – Ta Output voltage V OUT (V) −50 4.4 −25 0 25 100 75 50 4.45 4.5 4.55 4.6 VIN = 5.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 3.4 −25 0 25 100 75 50 3.45 3.5 3.55 3.6 VIN = 4.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150 −50 4.9 −25 0 25 100 75 50 4.95 5.05 5.1 VIN = 6 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 50 mA 100 150 −50 4.7 −25 0 25 100 75 50 4.75 4.8 4.85 4.9 VIN = 5.8 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 50 mA 100 150 −50 3.1 −25 0 25 100 75 50 3.15 3.2 3.25 3.3 VIN = 4.2 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, Pulse width = 1 ms IOUT = 50 mA 100 150

TAR5SB15~TAR5SB50 2014-03-01 20 −50 −25 0 25 100 75 50 0.1 0.2 0.3 0.4 0.5 0.6 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 150 mA 100 Ambient temperature Ta (°C) IB – Ta Bias current I B (mA) Ambient temperature Ta (°C) (TAR5SB23~TAR5SB50) V IN - VOUT – Ta Dropout voltage V IN - VOUT (V) Output current I OUT ( m A ) (TAR5SB23~TAR5SB50) VIN - VOUT – IOUT Dropout voltage V IN - VOUT (V) Output current I OUT ( m A ) IB – IOUT Bias current I B (mA) Time t (ms) Turn On Waveform Output voltage VOUT (V) Time t (ms) Turn Off Waveform Output voltage VOUT ( V ) −50 −25 0 25 100 75 50 0.5 1.5 2.5 VIN = VOUT + 1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms IOUT = 150 mA 100 0 50 100 150 Ta = 25°C −40 0.1 0.2 0.3 0.4 0.5 CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01μF Pulse width = 1 ms VIN = VOUT + 1 V, VCT (ON) = 1.5 → 0 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF 0 1 Control voltage waveform Output voltage waveform VIN = VOUT + 1 V, VCT (ON) = 0 → 1.5 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF 0 1 Ta = 25°C −40 Control voltage waveform Output voltage waveform Control voltage V CT (ON) (V) Control voltage VCT (ON) (V) VIN = VOUT + 1 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF Pulse width = 1 ms 0.5 1.0 1.5 2.0 2.5 0 50 100 150 Ta = 25°C −40

TAR5SB15~TAR5SB50 2014-03-01 21 Ambient temperature Ta (°C) PD – Ta Power dissipation P D (mW) −40 0 40 120 80 100 200 300 400 ① Circuit board material: glass epoxy, Circuit board dimention: 30 mm × 30 mm, pad area: 50 mm2 (t = 0.8 mm) ② Unit Frequency f (Hz) VN – f Output noise voltage V N ( μV/ Hz √ ) VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF,

10 Hz < f < 100 kHz, Ta = 25°C

0.1 0.01 0.001 10 100 1 k 10 k 100 k Frequency f (Hz) Ripple Rejection – f Ripple rejection (dB) 10 100 1 k 10 k 100 k 1000 k VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, VRipple = 500 mVp-p, Ta = 25°C TAR5SB15 (1.5 V) TAR5SB30 (3.0 V) TAR5SB50 (5.0 V) TAR5SB45 (4.5 V) TAR5SB35 (3.5 V) TAR5SB25 (2.5 V)

TAR5SB15~TAR5SB50 2014-03-01 22 Package Dimensions Weight: 0.014 g (typ.)

TAR5SB15~TAR5SB50 2014-03-01 23 RESTRICTIONS ON PRODUCT USE

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