TA8461F | DigiCamel IC Datasheet

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TA8461F TOSHIBA | Alldatasheet

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TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP The TA8461F is a multiple chip IC consisting of 4 saturated voltage discrete transistors and 1 dual operational amplifier. FEATURES q -_ NO Large Output Current : louT=1.5A (MAX.) Cena \\ @ Sealed in a Small Package : SSOP24 SSOP24-P-300-1.00B Weight : 0.27g (Typ.) BLOCK DIAGRAM IN2H OUTB Vcc} -INA +INA OUTA IN1H —V¢c2 QA © OO) OO) SS SS | VJ Boo LY }2sc2883 LN 252883 ourz1@ four ouT22)} | (24)our12 Pemed | frw | @ CXS) Qi) G38 22 23) NZL -INB +INB INIL GND PIN CONNECTION ourzz 1 2af] ouri2 GND [J2 231] GND Gno 3 22] Gno wat 4 217) inte +n Is 20 +ia - ine 6 197) -INa outs 7 18] OUTA cno Ys wD veer IN2H 9 16 [] IN1H Vec2 (10 151] Vec2 Vec2 11 141] Vec2 ouT21 412 13 fJourtr

961001 EBAZ

@ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating rangot as tot forth in the mott recent products pecificatione. Alzo, plese keep in mind the precautions and conditions tot forth in tho TOSHIBA Semiconductor Reliability Handbook. G The products described in this document are subject to foreign exchange and foreign trade control laws Zhe [information contained herein 's presented only as a guide for ‘the applications, of our products. No responsiblity is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1997-07-01 1/9

[Pm no.| svwpo. | __Funcrional oescrmion Pt OUT22 [PNP (2) Emitter po PGND GND P38 PGND GND [4 | Na [PNP @) Base } 5 | +INB (OP. Amp (B)input(+) |} 6 {| =INB__[OP. Amp (B) input (-) po | GND GN [9 | —N2H NPN) Base [13 [uri [NPN (1) Emitter [16 [NTH [NPN (Base SSSSOSOSOSCSOOSCCCCSCSCSCSCSCS | 18 | OUTA [OP. Amp. (A) output | 19 [ -INA_[OP. Amp. (A) input (-) [20 | + INA | OP. Amp. (A) input (+) [21 [Ni [PNP (1) Base SSCS [22 | ND GND [23 [end [ends P24 uTI2 PNP (1) Emitter MAXIMUM RATINGS (Ta = 25°C) [Collector-Emitier Voltage | Vcgo | 30| -V_| Output [Emitter-Base Voltage _—~—S*dYCSSego | sd [Base Current] pT TC lor. amp. [amptter pat Wolpe | val | — a9 — |v] [Power Dissipation | Py (Note 2) 1.0 | W | (Note 1) Pulse measured : Pulse width = 10ms (MAX.) Repetition cycle =30% (MAX.) (Note 2) No heat sink 1997-07-01 2/9

ELECTRICAL CHARACTERISTICS

Output transistor unit (Ta = 25°C) TEST CHARACTERISTIC SYMBOL | CiR- TEST CONDITION TYP. | MAX. | UNIT CUIT DE Current Fre c_| — |Vee=2V, 1c=05A [160 | — | e00 | Amplification Factor | hre(2)_| — |Vce=2V, Ic=1.5A | 50 | 100 [| — | Vee at) | _ [Ic=05A, Ip=10mA [= [02 [30 | Output Saturation (NPN) [Ic=1.5A, Ig=30ma | — [| — [20] Voltage Vee at) | _ [IC=05A, Ig=10mA [= [02 [050 | (PNP) Ic =1.5A, Ip =30mA | — | — [ 20] Transition Frequency | fr__[ — [Vce=2V, Ic=0.58 | — | 120 | — | Miz | Output Leakage [tou (nen) | = |Vec=30v0 CP = TT tO Current lot (PNP) | — [Vcc =30V [— | of w| . Vpe (NPN) | — [VcE=2V, Ic=0.5A | — | — | 10] Beseremitter Voltege [Vgc nr) [ — [Vce=2V,Ic=0.5A ce Operational amplifier unit (Vcc =5V, Ta = 25°C) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION TYP. | MAX. | UNIT CUIT input Offet Voltage R= TORT [= 2,7] Input Offset Curent | io [2] Sid | SO finput Bias Current |u| 2| Si P28 280 | In-Phase Input Voltage | CMViy | 2 | Vcc =30V | o| - | vec Supply Current [Tec | 4 [R= =, ALL OP Amps L— [07 [12 | ma | Voltage Gain [ey [5 [rr=2Kn [86 [100 | — | a | Maximum Output _ Vcc Amplitude Voltage Vorp | s | RL= 2k ne -15| ¥ Common Mode Supply Voltage < Rejection Ratio SVRR 1 |RgS 10k. 100 [Source Current | Toure [6 [IN(=)=0Vpe, IN()=WWpe | 20 [a0 [| — | ma | [sink Current | sink | 6 [IN(~)=0Vpc, IN(+)=1Vpc__| 10 | 20 | — | ma | Cutoff Frequeny [ff [—| Ss — <i) — | 15 | — [| slew Rate | Sk | | SS 08 [Vi 1997-07-01 3/9

(1) Vio, SVRR © Vio=Vout/ 100 Voc @ SVRR =20fog E (dB) ima rox = Yours =Yaur2 | J et erect Veen | * 700 10k g O Vour VouT1 : Vout (Vec1 =5V) " VouT2 : Vout (Vcc2 = 10V) (2) I lo vec Voc + : ho=lhi(-y-hceyl WH) Wr) (3) CMVjn, CMRR vec ima? @ CMRR=20f0g Gp/Gc (dB) 10k0 LN | Gp : Differential Voltage Gain nn b> Gc : In-phase Voltage Gain vw O 3 O vour © CMVIN : ViN=OV, Vec-1.5V (4) Iec Vec , © Kec : Vec=5V 1997-07-01 4/9

(5) Gy ; ©@ Gy=20f0g e9/e; (dB) 2 R R>1/Wc4 qat & C1 : For Preventing DC Short-Circuit. ! cS 2 : For High Frequency Short-Circuit. “o ws Use a Mica or Titanium Capacitor. (6) VOp-p: Isource: 'sink Vee e Vop-p VOH : SW} is to A side. rps Vour VoL : SW; is to B side. rar ds e| Lane swe source san S SW is to A side. ty] ~ VouT->0V Measurement © sink SW is to B side. VouT—5V Measurement 1997-07-01 5/9

CHARACTERISTIC CURVES (Ta = 25°C) (1) Operational amplifier Vee - Iec Vec - I aa % CLL. p= | z a g LT mbt 2 |i TTT yy y LLL - TTTrTrftli rf PPP P rie S & al a 2 Ss 50 P Trl 2 eee PPT of Seer ; SS PTT PTTL % 10 20 30 40 % 10 20 30 40 SUPPLY VOLTAGE Vcc (V) SUPPLY VOLTAGE Vcc (V) Vec - Gy Isource - Ta ~“TTITITIe ° [| i Ey & ‘source S129) = I a) Sear A : eT rry yyy? 2 80 ar) es ee efrPrerrre} ¢ > 5 o 3 a 8 a [| = REE | | | PK % 10 20 30 40 3055 0 20 40 60 80 SUPPLY VOLTAGE Vcc (V) AMBIENT TEMPERATURE Ta (°C) CMRR - f Gy -f 2 . fe} Ve Pi - % WW ie 60 Fa # NG eee 30 we N 2 ge | Ne i | WO 3 20) IN PaeeeNe 0! 0! IN 100 1k 10k 100k 1M 1 100, 10k 1M FREQUENCY f (Hz) FREQUENCY f (Hz) 1997-07-01 6/9

Vin. VouT - t FH = : A YLT Vop-p - f Took 3 DANSE | Co pe be _—- SEnnE g all ran NE e FAN TMM i sveveses ; Nu Url 2 “ES s2 *OUTIN HH | EEE |

22 ENT tit | as :

eT BN | == | HHH CNT | ;

3 CT TTT = :

g $ OK 3 veeouener f (Hz) Ett : ~ | | LH VOUT A = = “oo as = 7: Th ; Ee {a Eh _ FPP _| Lint oe pa

2 Pb A : AS Sires

3 | outeur a : tt : : H aa _ 4 : H FE = o (ma) : UT nam FA oH o = = ° JTPUT CURRENT ° “ TIME t (4s) - IoL VoL = |_| 7 7 = TTT Es 7 3 | | | oo Z

7 ES i 4

(2) NPN transistor, PNP transistor Vee (sat) ~ Ic (NPN) 3 Vee (sat) ~ Ic (PNP) (COT TTT rv STA ee one = os} or | z FP oo 22 of Oa ee) ee et fe Vi Be Y E Val e WA en) oe ae S. | eg gor tee tt ra 701 EE ee Oe os SS tt Oe osm titrs- toon HH eA Ht $3 0s SS eer ti I 83 -oos pS EE ye = OCS HH 3° 0.03} HINA 3” 903) Let 8 [PT Net PTT | 8 FH He ool LUM Till FETT | woo UTM iil LATTIE 1 + 3 10 30 100 300 1000 “Ty -3-10 30-100 =300 - 1000 ~3000 COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) hfe - Ic (NPN) hee - Ic (PNP) 3000) oo ear re a one

3 SSE vee=2v 1000 a

2 soof Ff SEP a 2 Seer nel —===s ae 1 S52 30 See z aaa oeesrc eres OO sot Lea | ® e® D eeN | 85 00 ae BS tod a ea aN Coa ae eo Eee a oe ce S sof ep bs pan ap sd 8 ao ST 8 ag OO ° 3 10 30 100 300 1000 OF -3 -10 -30 -100 -300 -1000 -3000 COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Pp - Ta 1.6 D |} 1} horn 2, | | | | ae ee a4 NET TTT Sg Ez os| e4 |] ST = 04 Ss oo 50 100 150 AMBIENT TEMPERATURE Ta (°C) 1997-07-01 8/9

$SOP24-P-300-1.00B Unit : mm HAARARAR ARR AR e N oO) = ° > My € “| «| 2 1 i 12 13.5MAX 13.040.2 Nx 8 R,-3 ee rye = lo} 0 . P7015) pa : + o ° 0.4540.2 Weight : 0.27g (Typ.) TTT AGT-O7-0T

Product Information

TA8461F specifications and overview.

Summary

DUAL POWER OPERATIONAL AMPLIFIER

Description

DUAL POWER OPERATIONAL AMPLIFIER

Source title TA8461F Datasheet(PDF) - Toshiba Semiconductor

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