TA8302F TOSHIBA | Alldatasheet
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TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor and Free- Wheeling diode. This IC is suitable for a camera use motor drive applications. d « y x5 Wet Sa ESTs FEATURES WS @ Suitable for high efficiency motor drive circuit. © Built-in Bias Resistor : R=10kO SSOP16-P-225-1.00A @ Built-in Free-Wheeling Diode : Only Lower side Weight : 0.14g (Typ.) @ Small package sealed : SSOP16 @ Low saturation voltage BLOCK DIAGRAM @ @@ a) | Las | T= © RNSOO6 q << E < ase ES i || = iS) QO ® @) @® 2809106882 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In ceveloping your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1998-12-24 1/4
FUNCTION DESCRIPTION ON EACH TERMINAL ce [pat Terma [a Tr oa — output Terma [sre oe —— input Terminal — [6 fr 05, 06 eno [eros input Terminal — [sos input Terminat — [6-1 input Terminal —| MAXIMUM RATINGS (Ta =25°C) Breakdown Voltage loutpat coment} igus base Curent} ipo [Power Disipation | pp 450 bunetion Temperature |, | 150 | "c_] foperating Temperature | “Top [= 20-@ | “e] 980910EBA2" CORPORATION for any infringements of intellectual property or other rights of the third parties which may resuit from its use. NO license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The'information contained herein is subject to change without notice 9998-12-24 2/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) TEST CHARACTERISTIC | SYMBOL MeAsuRING TEST CONDITION an. | ve. | UNIT cuit Current Gain hre 2 | 28¢2982 | — |Vce=-1V, Ic=500mA | 140/ — | 600] | hee 3 | RNSOO6 | — |[Vce=-1V, Ic=500maA_ | 160 | — | 600] | cmuaion 2sa1362 | — ic= ~600mA, Ig= - 10mA | -05 | — | — |v Voltage Vee 2 | 2sc2982_| — [Ic=600mA, Ig=20mA | — | — | os] v | [Leakage Current | lore [| = [Vcc=7V_ | | = TT 10T ZA | Base- Emitter SAIsG_| — |Wee==1V, Ics =GoOMA [= 10| — | =055]_v_] Forward Voltage [ Vpe 2 | 28€2982 | — [Vce=1V, Ic=600mA [ o5 | — | o9] v | Diode Forward | y_ RNSO06 Ip=300mA os9 | 12] v Voltage Li 2501362 _| — |Vee==8V, tes = Toma | — | — | 120 | Transition 752962 | — [Vee =W, les S00ma [=| =| 150 wi Frequency 2 CE= C= RN5006_ | — |Vce=1V, Ic=500mA P= [ = [40] iz | 1998-12-24 3/4
SSOP16-P-225-1.00A Unit : mm 16 9 ' a ay 3 al = 3| ¢ & o] ws] a vt] 6 x F 1 8 O.6TYP 0.4+0.1 8.7MAX 8.2+0.2 g Nn ba} a. if OT & rt ry ir So [rey bia eas 0.525+0.2 Weight : 0.14g (Typ.) 1998-12-24 4/4