TA8258HQ_06 TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

  • High output power: Pout = 20 W/channel (Typ.) (V CC = 37 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
  • Low noise: Vno = 0.14 mVrms (Typ.) (V CC = 37 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, BW = 20 Hz~20 kHz)
  • Very few external parts.
  • Built in audio muting circuit.
  • Built in thermal shut down protector circuit.
  • Built in output shifted to GND protection circuit. (AC short)
  • Available for using same PCB layout with: TA8200AH, TA8211AH, TA8216H
  • Operation supply voltage range (Ta = 25°C) : V CC (opr) = 15~42 V The TA8258HQ is plated with lead-free lead finishes, but the silicon pellet is attached to a heatsink with lead-containing solder paste. Weight: 4.04 g (typ.)

Application Information

  1. Voltage gain The closed loop voltage gain is determined by R1, R2. = 34 (dB) When R3 = 220 Ω GV ∼ − 30 (dB) is given. Toshiba has confirmed that the G V (min) is approximately 28 (dB) on a regular printed circuit board. However, if the value of R2 + R3 is larger, the feedback voltage increases and oscillation will start. Determine the value of R2 + R3 to ensure proper startup behavior under actual usage conditions. Ω Ω+Ω= 400 400k 20og20λ (dB) R21Rog20VG +=λ (dB)RR RRRog20G 321 V + ++=λ 20 kΩ 400 Ω OutputInput Figure 1 20 kΩ 400 Ω OutputInput Figure 2 6 9 IN1 Ripple Filter V CC IN1 VCC IN2 RL 20 kΩ RL

2 IN2

400 Ω 20 kΩ400 Ω 8 11 R C C R Mute. TC Mute

  1. Heat-sink Be aware of the heat-sink capacity. Use a heat-sink that has high heat conduction. Note 2: Please connected a Heat-sink to G ND potential, otherwise THD may deteriorate.

(bottom view) TOSHIBA

Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage V CC 50 V Output current (Peak/ch) I O (peak) 3.5 A Power dissipation P D (Note 3) 25 W Operation temperature T opr −20 to 75 °C Storage temperature T stg −55 to 150 °C Note 3: Derated above Ta = 25°C in the proportion of 200 mW/°C.

Electrical Characteristics

(unless otherwise specified VCC = 37 V, RL = 8 Ω, Rg = 600 Ω, f = 1 kHz, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Quiescent current I CCQ ⎯ V in = 0 ⎯ 75 130 mA Pout (1) ⎯ THD = 10% 17 20 ⎯ Output power Pout (2) ⎯ THD = 1% ⎯ 15 ⎯ W Total harmonic distortion THD ⎯ P out = 2 W ⎯ 0.05 0.2 % Voltage gain G V ⎯ V out = 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB Input resistance R IN ⎯ ⎯ ⎯ 30 ⎯ k Ω Ripple rejection ratio R.R. ⎯ fripple = 100 Hz Vripple = 0.775 Vrms (0dBm) −48 −60 ⎯ dB Output noise voltage V no ⎯ Rg = 10 kΩ, BW = 20 Hz~20 kHz ⎯ 0.14 0.3 mVrms Cross talk C.T. ⎯ Rg = 10 kΩ, Vout = 0.775 Vrms (0dBm) −50 − 60 ⎯ dB Mute on voltage Mute-on ⎯ Mute on GND ⎯ 1.4 V Mute off voltage Mute-off ⎯ Mute off 3.7 ⎯ 10 V Mute ATT ATT ⎯ Vout = 0.775 Vrms → Mute −50 −60 ⎯ dB Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C) Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12

*1: The capacitor for reducing POP noise at mute ON. 6 9 IN1 Ripple Filter VCC RL 20 kΩ RL 400 Ω 1 20 kΩ400 Ω 47 µF 1000 µF 2.2 µF 2.2 µF 47 µF 47 µF 2.2 Ω 2.2 Ω 0.12 µF 0.12 µF 1000 µF 1000 µF 8 11 *1 Vth ∼ − 2.8 V 10 µF Mute. TC Mute

Ripple rejection ratio R.R. (dB) Voltage gain G V (dB) Output power P OUT (W) THD – Pout Total harmonic distortion THD (%) Output power P OUT (W) THD – Pout Total harmonic distortion THD (%) Frequency f (Hz) THD – f Total harmonic distortion THD (%) Frequency f (Hz) GV – f Frequency f (Hz) R.R. – f Signal source resistance R g ( Ω) R.R. – Rg Ripple rejection ratio R.R. (dB) Rg = 620 Ω RL = 8 Ω Vripple = 0.775Vrms VCC = 37 V −70 −80 −30 −20 30 300 30k 100k 1k 3k −60 −50 −40 −10 100 10k OUT1 OUT2 fripple = 100 Hz RL = 8 Ω Vripple = 0.775Vrms VCC = 37 V −70 −80 −30 30 0.3 30 100k 1k 3k −60 −50 −40 100 10k OUT1 OUT2 0.1 0.03 0.5 0.3

100 RL = 8 Ω

f = 1 kHz Filter: 400~30 k 1 3 30 1000.5 5 10 50 0.05 0.1 0.3 VCC = 15 V 37 42 0.03 0.01 0.5 30 300 30k 100k 1k 3k 0.05 0.1 0.3 100 10k RL = 8 Ω Pout = 1 W VCC = 37 V Filter ~30 k (f = 20~800) 400~30 k (f = 1 k~2 k) 400~80 k (f = 4 k~6 k) OUT2 OUT1 RL = 8 Ω Vout = 0.775 Vrms VCC = 37 V 30 300 30k 100k 1k 3k 100 10k 0.1 0.03 0.5 0.3 100 VCC = 37 V RL = 8 Ω Filter 100: ~30 k 1 k: 400~30 k 10 k: 400~ 1 3 30 100 f = 10 kHz 0.5 5 10 50 0.05 0.1 0.3 100 Hz 1 kHz

Rg = 620 kΩ RL = 8 Ω VCC = 37 V −70 −80 −30 −20 30 300 30k 100k 1k 3k −60 −50 −40 −10 100 10k OUT2 → OUT1 OUT1 → OUT2 Quiescent current I CCQ (mA) Output power P out (W) Frequency f (Hz) C.T. – f Cross talk C.T. (dB) Signal source resistance R g ( Ω) C.T. – Rg Cross talk C.T. (dB) Signal source resistance R g ( Ω) Vno – Rg Output noise voltage V NO (mV rms) Supply voltage V CC (V) Pout – VCC Output DC voltage V OUT (V) Supply voltage V CC (V) ICCQ, VOUT – VCC Output power Pout (W) PD – POUT Power dissipation P D (W) 5 10 15 20 25 30 35 40 f = 1 kHz RL = 8 Ω THD = 10 % RL = 8 Ω VCC = 37 V B.W = 20Hz~20kHz 100 500 600 30 300 30k 100k 1k 3k 200 300 400 700 800 100 10k OUT2 OUT1 −70 −80 −30 30 300 30k 100k 1k 3k −60 −50 −40 100 10k f = 1 kHz RL = 8 Ω VCC = 37 V Vout = 0.775Vrms OUT2 → OUT1 OUT1 → OUT2 f = 1 kHz RL = 8 Ω 5 10 25 20 15 37 V 15 V 42 V 100 120 10 20 40 30 RL = 8 Ω VCC = 37 V Vin = 0 50 60 ICCQ VOUT

1: INFINITE HEAT SINK 2: 4.1°C/W Aℓ HEAT SINK 3: 9.5°C/W Aℓ HEAT SINK Mute control voltage V mute (V) ATT – Vmute Mute ATT (dB) Ambient temperature Ta (°C) PD MAX – Ta Allowable power dissipation P D MAX (w) f = 1 kHz RL = 8 Ω Vout = 0.775Vrms VCC = 37 V −60 −80 −40 −20 1 2 4 3 Ambient temperature Ta ( °C) THD – Ta Total harmonic distortion THD (%) RL = 8 Ω VCC = 37 V f = 1 kHz Pout = 2 W 0.03 0.01 −40 0.05 0.1 0.2 −20 0 60 40 20 80 100 OUT1 OUT2 Ambient temperature Ta ( °C) R.R. – Ta Ripple rejection ratio R.R. (dB) Rg = 620 Ω RL = 8 Ω Vripple = 0.775 Vrms VCC = 37 V fripple = 100 Hz −80 −40 −40 −20 −20 0 60 40 20 80 100 OUT1 OUT2 −70 −60 −50 −30 −10 Ambient temperature Ta ( °C) ICCQ – Ta Quiescent current I CCQ (mA) VCC = 37 V RL = 8 Ω −40 −20 0 60 40 20 80 100 100

Weight: 4.04 g (typ.)

  • Strong Electrical and Magnetic Fields Devices exposed to strong magnetic fields can undergo a polarization phenomenon in their plastic material, or within the chip, which gives rise to abnormal symptoms such as impedance changes or increased leakage current. Failures have been reported in LSIs m ounted near malfunctioning deflection yokes in TV sets. In such cases the device’s installation location must be changed or the device must be shielded against the electrical or magnetic field. Shielding against magnetism is especially necessary for devices used in an alternating magnetic field because of the electromotive forces generated in this type of environment.
  • Use an appropriate power supply fuse to ensure that a lar ge current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and t he breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required.
  • If your design includes an inductive load such as a moto r coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at powe r OFF. For details on how to connect a protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
  • Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
  • Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, powe r amp and regulator. If there is a lar ge amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
  • Over current Protection Circuit Over current protection circuits (referred to as current li miter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and us age conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC break down before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown.
  • Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute ma ximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
  • Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperat ure (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characte ristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components.
  • Installation to Heat Sink Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive mechanical stress can lead to package cra cks, resulting in a reduction in reli ability or breakdown of internal IC chip. In addition, depending on the IC, the use of silic on rubber may be prohibited. Check whether the use of silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and heat sink installation, refer to individual technical datasheets or IC databooks.

RESTRICTIONS ON PRODUCT USE 060116EBF

  • The information contained herein is subject to change without notice. 021023_D
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their i nherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within s pecified operating ranges as set forth in the most recent TOSHIBA products specific ations. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traf fic signal instruments, comb ustion control instruments, medical instruments, all types of safety devices, et c. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implicat ion or otherwise under any pa tent or patent rights of TOSHIBA or others. 021023_C
  • The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
  • This product generates heat during nor mal operation. However, substandar d performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external out put stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 030619_R About solderability, following conditions were confirmed
  • Solderability (1) Use of Sn-37Pb solder Bath
  • solder bath temperature = 230°C
  • dipping time = 5 seconds
  • the number of times = once
  • use of R-type flux (2) Use of Sn-3.0Ag-0 .5Cu solder Bath
  • solder bath temperature = 245°C
  • dipping time = 5 seconds
  • the number of times = once
  • use of R-type flux