TA8162SN | DigiCamel IC Datasheet

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TA8162SN TOSHIBA | Alldatasheet

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TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL PREAMPLIFIER The TA8162SN is dual preamplifier designed for car stereo tape deck. This IC contains dual preamplifier and metal /normal tape — a equalizer control switches. a ie am FEATURES. Oo T V al \\ | yy @ High Open Loop Voltage Gain VY : Gyo =98dB (Typ.) (Vcc =9V, f= 1kHz) . el Distorti THD. 0.035% (Typ) (Gy =40dB, f= kHz, VouT=0.5V sae @ Low Noise (Equivalent Input Noise Voltage) : VN =0.9Vims (Typ.) (Rg = 6200, BW = 20Hz~20kHz, NAB EQ) @ No Input Coupling Capacitor @ Small Package : Shrink Pitch (1.78mm) Single In-line 12pin ©@ Operating Supply Voltage Range : Vcc (opr.) = 6~16V 961001684 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. Sir: products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is presented oniy as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual Property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-06-02 1/9

Ry Rue <6 ¥ © @-@ oa oa e @ am ee O OUT2 TOO 97-06-02

APPLICATION INFORMATION

(1) Equalizer control switch Pind) is coupled to the base of Qy (PNP-Tr) as shown in Fig.1. The emitter potential of Qy is 3.9Vdc. Ty Threshold voltage (pind)) : 32=Vee a (2) C2~3 Capacitor C2/C3 may be required for preventing a instability caused (Fig.1) by the pattern layout or interference of external high frequency signal. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage [vec | 6 Pp (Nate) Operating Temperature -30~75 Storage Temperature —55~150 (Note) Derated above Ta =25°C in the proportion of 6mW/°C. 1997-06-02 3/9

TYP. DC VOLTAGE OF EACH TERMINAL (Vcc =9V, Ta =25°C, Dual mode test circuit) DC-Voltage Vi 3.0 3.0 3.5 | Nn | vec | 20 | 20 | 20 | 20 Jono] 20 | 20 | 20 | 20 | 25 | 20 |

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, Vcc =9V, f= 1kHz, RL = 10kQ, Rg =6000, Ta =25°C, Normal EQ) TEST cuanacrenistic | SYMBOL TEST CONDITION rm. [ve | nr CUIT Guiewent Guvent McQ | = [Viv=0, Normal €Q [= s0/— | Iccq(2) |= [Vin=0, MetaleQ | — | 6.0] 9.0 | Open Loop Voltage _ _ Gain Gyo Cf=100pF, Rp=0 Maximum Output nc Voltage Vom | - | THD =0.5% 15 2.0 Vems Total Harmonic = y Equivalent Input Noise Rg =6200, NAB Voltage VNI |= | BW = 20H2~20kHz 17 [Nims Input Resistance | AN [—| Ss — Sid | «SOT — | | Ripple Rejection Ratio | RR_| — |frippie=100H2, Vin=1Vims | — | 55[ — | <8 | TEST CIRCUIT iy = 180. Rye=330k0 ce Str a=p—0 © vec S © “) cs Ry 12kQ au Z ole cya22ur#, RS O-O= agb _ SPIN °° “4 Rg s S © 33k0 M St Jd — @ : 9 3 s ' S485 w 7? at tits? 1] a 2 | Beers) 7 —@) [=> ' (+) 4 SW. i apols out-2 SND nails © Ter CO © SW; -20.01 0 o ot =4<0 Ry = 1800. Ry = 330k 47 pF ig g (*) Gyo Test : SWy.1, 2=OFF, SW2.1, 2=b 1997-06-02 4/9

120 ; Icc, Gvo. Vom - Vcc _— a Fete ef Ste LL Prom moos Ee eT DF reaamme tty eo & g | 6 g . PE at eg} FY 8 8 oo & -LEPRP Pecmenror § < a S al ne {ee 2 8 g LETT ay TT TT PTT’ 3 Sof 8 Peery rrr rrr rrr), 3 z PtP reer” A pttEti ttt ti tititit iti. = 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGE Vcc (V) Gvo - f @ NM TIM TTI vce ~ 420 Re=00 TTT = Lille Till Se we see TTT ee we | SUM TI TIE TTT 8 40

2 UI TET TT TTT

5 TT LETT TTT

03 On 03 1k 3k 10k 30k 100k

FREQUENCY f (Hz) Gy -f “TOM To vecnav eo CO TT ere oasmvrms Pie 0 Sof LI ea > “HI Seo ef Oe TTT TSS

2 SOOO

3 SCOR

Se | normat eq | ft g PUT PT SS SES woh LE Ter ce FT] CO on) gL 0.03 0.1 03 1 3 10 30 100 FREQUENCY f (kHz) TTT 1997-06-02 5/9

8 SSR RS 6 oO ——

LS a | i | = oof I NE = oot tH NET 3 a, al 5 SS, al = 0d ee EE FES tok oun == a ———o Cert <r | a 1kH2 ZT Nery °. oH — et wee o.oos} Ht co (| a 8 ee ee oo LLU i eg 0.03 0.1 03 1 3 5 ” Pos 01 03 1 3 5 OUTPUT VOLTAGE Vout (Vrms) OUTPUT VOLTAGE VouT (Vrms) THD - f Vout - VIN J SSe225 == 30) og CECI nae 4008 at 1kHz ? 10 NAB 40dB at TkHz Lt Sot EM TT ours Some £ SSSettti eesti . Pn = ast | i | = Normal EQ fe ee SL TALIM LUT] cxntnouravaio iter 3 Co eal

8 ERS SSS ee SLIM = soos 777

Sod NEL Pe | go SERS See aay eed ans eet 5 Are ea ees SE 3 Loe Pow id a La Se ee | 5 SS 8 oo Seer iaeeeyiieeesitioeeeci Poa LLL i it] si Ail i774 30 100 300 1k 3k 10k 30k 0.01 003 01 03 1 3 10 30 =—«100 FREQUENCY f (Hz) INPUT VOLTAGE Vin (Vrms) 1997-06-02 6/9

30 VNI - Rg - RR. - Voc | HE.) T= : oft epee : oft Et Vin = 300mVems eee eect eect eer 2 HEE 23 3 ce a Qg. ott ET TT TTT TT

25 WM 2 “TMT TLL

7 Me | sf TPT TA

be z pit TT Ty

5 Te : Poo

8 SU Co on eT) TTPTTPLLLLiee

oll ETHIE ETE TAT LL} 50 100 300 tk 3k 10k 30k 100k 4 6 8 10 12 14 16 18 SIGNAL SOURCE RESISTANCE Rg (0) SUPPLY VOLTAGE Vcc (V) CT. -f Vout - Ta “TTT TTT v.cnav TTLLLLLLI so CE ec Vec=9¥ COMM etme s JT ity 3 ea CITI v0 Vans s ELT EET ite

2 Cn Coo 3 PCPPePebe eee

Sg I Co - | tt es {ELE ey yy Sg EU Tere tome TTT § J) Cree i" CTA SSS 3 TTP Le 1 3 _ OSS 5 TT ea TN e TTT a Lr a CO on oi gg LOI TT LLILIT TT TT tt tt | 20 100 300 1k 3k 10k 30k -40 -20 o 20 40 60 80 FREQUENCY f (Hz) AMBIENT TEMPERATURE Ta (°C) Iec - Ta COCCO ew ev} tT ett ca ea gy gt EP ttt ttt ty yy ee ee @ git ti] Pest yyy § LETT TTT] PEN Ty e JETT TTT tt tt ty

8 LETT TT Ti ttt ty

A@LitTi titi titi ty -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (°C) TOT «AGT=06-02—- 79

Rg = 18002 Rye = 330k{2 ce G Ry 12k ae g me © Vee ' © @-2 oO a" Oy "72 nz €)) () Lee me +8=»—O ouT2 Rf = 1802 Rye =330kQ “tee g TOO 97-06-02

SSIP12-P-1.78 Unit : mm 2.840.2 “| 5 be] | be g mat ° 40.1 0.25 “9; 1,040.1 22.0MAX 21.540.2 | ny emy-cp- omen tumeamem_emm-_can 1 12 Weight : 0.65g (Typ.) << 4997-06-02 9/9

Product Information

TA8162SN specifications and overview.

Summary

DUAL PREAMPLIFIER

Description

DUAL PREAMPLIFIER

Source title TA8162SN Datasheet(PDF) - Toshiba Semiconductor

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