TA4100F TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC UHF VHF RF, MIX APPLICATION
FEATURES
@ High fr. (ff =5GHz) © Differential Circuit is Composed of 3 Transistors. q Ub \\ “ SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) MARKING Weight : 0.013g (Typ.)
83 E B2 65 4
[6] [5] [4} EXEL EY] type name | [| ve us By HAA
2 Cl BI 123
Cc ... COLLECTOR B ... BASE E ... EMITTER MAXIMUM RATING (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Veso | 10 | Vv | Collector-Emitter Voltage VcEO Collector Current [ Ic [15 (*1), 30(*2)| ma | Total Power Dissipation Pp (*3) Operating Temperature -40~85 Storage Temperature Range =55~125 (*3) When mounted on the glass epoxy board of 2.5cm?x 1.6t 96100168A2 © TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or “all due to their inherent electrical sensivity and vulnerability to physical stress. is the responsibilty of the buyer, when liaing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranger ae fat forth in the most racomt products epecificatione. Also, pleate keap in mind the precautions and conditions cot forth in the TOSHIBA Semiconductor Reliability Handbook. & The products described in tis document are subject to foreign exchange and foreign trade contol laws Zhe Information contained herein 's presented only as 2 Guide for the applications ‘of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ the information contained herein is subject to change without notice 1997-07-22 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) TEST, CHARACTERISTIC SYMBOL |CIR- TEST CONDITION TYP. | MAX. | UNIT CUIT Collector-Emitter Veeo (1) [ = [ici =1.0mA, (Ig3 = 1mA) ; 5{— | -] Voltage Vceo (2) | — [icz=1.0mA, (Ig3 = 1mA) [| s/—][—]v | Vee (3) [= [lei(ics)=t.0ma TS | = | | [hee (| = [Ver =6V, ley =5miR, Caps may] 50 | 700 | 160 DC Current Gain hee (2) [| — [Vc2=6V, Ic1=5mA, (Ig3=1mA)| 50 | 100 | 160 | hee (| — [Wer (ea) =6¥. Igy fica) = TOMA Lr | = [Vcr =6v, Ic1=5mA, (Ig3=tma) | 3.5 | 5.0 | 7.0 | Transition Frequency #2) | — [Vc2=6V, Ic2=5mA, (Ig3 = 1mA) GHz %K (1) ... Characteristics of Q1 (2) ... Characteristics of Q2 (3) ... Characteristics of Q3 EQUIVALENT CIRCUIT 2 fo} ) Qi Q2 ® ® Q3 hee (1) - Ie fr(1) - Ie 300, Vocu6v 8 Re ee g Ta=25°C S100 ap 3 et 2 | « a eS § 4] 7 4 = a fog e ~ | tT titi ft z 2 ,, | | Titi J | 5? gt Ti Te 1 3 5 10 30 SLU COLLECTOR CURRENT. Ic (mA) 10; 3 5 10 30 COLLECTOR CURRENT Ic (mA) 1997-07-22 2/4
hee (2) - Ic #7 (2) - Ic 300) Vec=6V 8 = Ta=25°C a TT Cl fal || i eS SE 2 Fa - as es gS 4 L z a SA OS OO | g S$ st _| | Titi = s [|_| Titi tf z 2 4 [| TIT I a? 2 | TT Tt g = 1 3 5 10 30 COLLECTOR CURRENT I¢ (mA) 10; 3 5 10 30 COLLECTOR CURRENT Ic (mA) hee (3) - Ic : fr (3) - Ic 300 Vp1=6V ee ee [ : Try f° yi S100) or fe] J Fg es 2 va - a OO Ey 4 7 z cr a a lef y s sf} | Titi Ty & ee a a 3 WA, 2, [| TU 2 [7 g oe * 3 5 10 30 50 COLLECTOR CURRENT Ic (mA) 19) 3 5 10 30 COLLECTOR CURRENT Ic (mA) 1997-07-22 3/4
SSOP6-P-0.95 Unit : mm 2.8795 16°34 =e 6 — | S| 2 a1 5 © vo] = TT 3 4 ag as o PP = cr oO z oO Weight : 0.013g (Typ.) 1997-07-22 4/4