TA2104BFN | DigiCamel IC Datasheet

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TA2104BN TOSHIBA | Alldatasheet

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TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2104BN, TA2104BFN 3V AM/FM 1 CHIP TUNER IC (for Digital Tuning System) TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, TAZIO4EN which are designed for portable Radios and 3 V Head phone Radios. _— This is suitable for Digital Tuning System Applications. FM _— , Local Oscillation Voltage is set up low relativity, for NEW > ———_ 1 FCC. Nay i ni FUNCTIONS © For NEW FCC. SDIP24-P-300-1.78 TA2104BFN @ Suitable for combination with Digital Tuning System which is included IF Counter. @ One terminal type AM/FM IF count output for IF counter of Digital Tuning System. q ~ * FM. : 1.3375 MHz (1/8 dividing) x: eat + AM : 450 kHz TRS @ Built-in Mute Circuit for IF count output. © For adopting ceramic Discriminator, it is not necessary to Welon SSOP24-P-300-0-65A . eo eight adjust the FM Quad Detector Circuit. SDIP24-P-300-1.78 : 12 (yp) © Built-in FM MPX VCO circuit. SSOP24-P-300-0.65A : 0.14g (Typ.) © Built-in one terminal type AM/FM Local Oscillator Buffer Output for Digital Tuning System Applications. @ Built-in AM Low cut circuit. @ Lowsupply current. (Vcc = 3V, Ta = 25°C) Iccq (FM) = 11 mA (Typ.) Iccq (AM) = 7 mA (Typ.) © Operating Supply voltage range : Vcc = 1.8~7V (Ta = 25°C) (*) Handle with care to prevent devices from deteriorations by static electricity. 980910EBA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. Sire products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-05-26 1/16

uw OSC BUFF OUT pour ° ee | © iF REQ Hs d (C3) ; 1] aoe ifs Ve > » LY sealer a eee FLTAA > foo A Ys | e! TT IT [exo Jr ari ram Vee no acc = quan JRour oo br REE if ! a re 0 a ee | ROUT LOUT 1999-05-26 2/16

(Terminal Voltage : Typical terminal voltage at no signal with test circuit, Vcc = 3V, Ta = 25°C) TERMINAL CHARACTERISTIC INTERNAL CIRCUIT oer Pam [FM | RF GND (GND for FM OSC stage) 2. |FM-RFin @ % S s ne ono @—b— ae -: DET 3 |AM LOW CUT ‘a 1.0 Lit |, 22k. Gnd @) vec @ ® wx (" ® MIX OUT maa 3.0 z “ x PP "3 9 ar cn @) ® «no Vcc (Vcc for AM, FM IF, 30 FM MPxX stage) . $ g AM IF IN © 2.5 Gnd @) vec @ : a 7 +|FM IF IN ® 3.0 3.0 cno® 1999-05-26 3/16

CHARACTERISTIC INTERNAL CIRCUIT vouTact [am [FM _| GND (GND for AM, FM IF, FM MPxX stage) vec OS AGC O76 Gnd@) — vec® TT fy 10 | QUAD Ria 25 FF] e 4 Gnd (8) vec® 11 |R-out a 1.2 12 12 |L-out (| 5 © cn ® - @ LPF terminal for phase a sw Detector. 13 |@ Bias terminal AM/FM ee ee 2.2 SW circuit. a. Vi3 = GND>AM al V43 = OPEN >FM 7 © ono 1999-05-26 4/16

AM Low-Cut Circuit © The AM Low-Cut action is carried out by the bypass of the high frequency 23k0 component of the positive-feedback signal at the AF AMP stage. tne! The external capacitor : C3 by-pass this component. © 22 “® © The cut-off frequency f, is determined by the internal resistance R 22 kQ (Typ.) and the external capacitor C3 as following ; 3 f -_—__1 (Hz) , be Dx x22 x 10° x C3 O In the case of the AM Low-Cut function is not needed, set up the value of C3 over 1 pF. In the condition of C3 2 1 uF, the frequency characteristic has flat response at the low frequency. © It is possible to reduce the recovered output level at AM mode, by additional resistance between the pin@ and GND line. 2. FM Detection Circuit For the FM detection circuit, detection coil is able to use instead of ceramic discriminator. Recommended circuit and recommended coil are as follows. (In this case, please take care that Vin (lim.) falls a little.) vee Vee f ) Pin® ¢ WIRE TEST FREQUENCY ‘2 REFERENCE Gh % Peres tsTee] cma | _rererence | TOKO Co., Ltd. rarmne | st | as | — | | 30 | — | os vew | oscas iootz 3. FM/AM switch and forced monaural switch. © FM/AM switchover and stereo/forced monaural switchover are done by pin @ and pin @. © FM/AM switch (pin ®) (vig : Low (Active Low, Vth = 0.2 V (Typ.), Ith 30 A (Typ.) >AM ) V13—: OPEN —>FM O Stereo/forced monaural switch (pin @) (Via : Low (Active Low, Vth = 0.2 V (Typ.), Ith 30 “A (Typ.) > Forced Monaural v14_: OPEN — Stereo ) VCE (sat) ¢ ° VE (sat) ¢ ° Jou © © 1999-05-26 7/16

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Supply Voltage | Vee | 8 | Vv | [LED current (| eo | 70 | ma | LED Voltage vied [8 |v nag: | TA2104BN PD Operating Temperature =25~75 Storage Temperature -55~150 (Note) Derated above Ta = 25°C in the proportion of 9.6 mW/°C for TA2104BN of 4mW/°C for TA2104BFN. 1999-05-26 8/16

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, Ta = 25°C, Vcc = 3V, F/E : f = 98Mhz, fm = 1kHz FM IF: f = 10.7 MHz, Af = +75 kHz, fm = 1 kHz AM: f = 1MHz, MOD = 30%, fm = 1kHz MPX : fm = 1kHz TEST. CHARACTERISTIC SYMBOL | CIR- TEST CONDITION TYP. | MAX. UNIT CUIT Teer | — [Vin = 0, FM mode [| — | ni] 145] Supply Current mA aid lec (avy | — [Vin = 0, AM mode | — | 7] 95 Input Limiting oo Vin = 60dByuV EMF, eye (voltage Vin (lim) | - | 3B limiting 2 dBxV EMF Local OSC Buffer Vosc _ Output Voltage buff) EM fosc = 108.7 MHz 23 Vrms Input Limiting oo Vin = 80dByV EMF, Voltage Vin (lim) IF =| -3dB limiting 37 47 \\dBV EMF Recovered Output oo an eo Signal To Noise mr [on [ferwawer [| =| | Total Harmonic oo 9 wear [vo [fearon [-| | IF |AM Rejection oo IF Count Output Vin = 80dByuV EMF, Frequency fF (FM) | = [si ON 1.3373 |1.3375 |1.3377 MHz IF Count Output Vin = 80dBuV EMF, Voltage Vir (FM) |= | SW7 : ON 250 mp-p IF Count Output IF sens sage W7 : ON 1) dBuV EMF fest | tw” [=| eon | fae] stati Iain y= [in = 27a EMF | 20 38] 70] ee Recovered Output Serre [vo [pncweavew |e] eo ote Signal To Noise oo meee [ow [ofnvemwer [—[ al —| | Total Harmonic Local OSC Buffer Vosc _ Output Voltage (buff) AM fosc = 1.45 MHz mVrms IF Count Output Vin = 60 dByV EMF, Voltage Vir (AM) | - | SW7 : ON 250 mp-p IF Count Output IF sens . W7 : ON 4: BuV EMF Sensis [a |= [ser=on | 38] 2] [sv PIN @ Output Resistance R17 moc — — kQ 1999-05-26 9/16

22 uF = & Vpp = 8V a S % 24a DET OUT g § 2 Ss . che = gs < se Js . I AMRFIN | 2kO osc our “Jyo < g g o022HF Ss ¢ iF OUT 10 #F-MPX IN 3 ls #0 vin Vr s ste S 9 s 2 a © ee es | © vce g g g +43 : 5 g| | g A ES = = 2 eB Js & 5 5 x |e a a 3 ® = 3 3 § 4 ésws | ¢swa FMRF = RF Vcc =AMRFin = FM AM osc ST iF DET PX LPFA LPF2 OUT osc osc OUT LED REQ OUT IN TA2104BN/BFN Re AM Low GND FMRFin CUT MIKOUT —Vcc_—=OAMIF IN. FMIFIN GND AGC_—=— QUAD. ROUT -—LouT S}+ swe 0083 2 a ae DE Bs s = at wl. Ts g fa ce] Se’ [2 et me Id he Four S eMaeIN oe o : [Pe }-o sw 3 2. 2700 BPF : GFWB3 (SOSHIN ELECTRIC Co., Ltd.) is ES CF} : SFU450B (MURATA Co., Ltd.) Vin@ vin CF : SFEI0.7MAS (MURATA Co., Ltd.) ‘CR : CDA10.7MG80-A (MURATA Co., Ltd.) 1999-05-26 11/16

FMFE FM (IF) Vop, THD, AMR - Vin Vop, THD, AMR - Vin [|] ] feas-2somvns| [vol |, & [eve asomvns | TT TT ol] 0 7 4 f) ain 4 PTT 7E ITT TTT TTT e PPPT TT TTT TTT Ty es 0) SRR ee s J fin = 98 MH 6 og - 6 S FEAL reg ELE ZAT TTT TTT = BLT EANN ETT feo 2 3 JEFF ANVYN Tg

2 AIS 2 8 8 _~» EEE ON 2 5

@ [LUNN TTT TE gb“ TTmemeeN TVET TMI 2 MP ANZ), = sv LIM Nel ZV a A SNV!, = —gp| Voc = 3 Y\\ amr /| g MVE Vg “grin TINTS! LOPS NSS, § alin ps NSE, 8 -2 020460 BO T0012 a a INPUT VOLTAGE Vin (d8,2V) INPUT VOLTAGE Vin (d8,V) FM (IF) FM (IF) 10 Vop, THD - Af 5 ‘0 Vop. Vin (lim). !¢cq - Vcc [ [1] ] [oss-asomins | | [J g 8 See Reeeee FR ss TTT 2 § Z ; ¢ leco—| g CRATE py EER ¥ I g 8 . @ J LILI TTI YT og 5 Lif oo= 20mm | TPE Pheer MO oF 8 occ, 3 -70] At = £75 kHz HE ne ef +--+} ¢ 2@ of) | i fin = 107 Wiz Z fim = tke res Sof asi | z 8 a +” gal n= 202814 EWES Fe 2B goo in sosoe “a0 2001090700200 300 0 2 6 = 70 CHANGE IN FREQUENCY Af (kHz) SUPPLY VOLTAGE Vcc (V) FM FM (IF) ‘i +o IFsens, Vosc, VIF - Vcc «00 «o lFsens, VOD. ViF ~ Ta e PRErEt re } xe HEE. 3 2 — J =z é SS Sern == ee ee & Groene? & HH = @ SSS pe HS & Fer rr rrr rr, § 8 El+rrre tt td. 3 Be EY tin = 107 He 26 LITTITITTITiT tt I, & a ee wo 2 | [| Weceay, ate ark | 2 on ee 2 SE -2 cc 5 5d ee ee | tose a 38 [| | Min= soaew EMF, fm =1kHz 3 gE Fe Vin = 80 d8pV g gg volte fip = 1.3375 MHz i “eo 0 2 4 6 8 10 =40 -20 o 20 40 60 80 § SUPPLY VOLTAGE Vcc (V) AMBIENT TEMPERATURE Ta ("C) 1999-05-26 12/16

“ Vop, THD - Vin . ao Vop, THD - MOD : Vec =3V S . S ee HOt: , Tec 2 es LILIA og & ao J, 3 © a Am TTL ge LL Je CUNT eee PAN, be = asdy, : ETT SNNSEET Ye Ne Sa 3 Ne SSEe z 8 p> —-an-. Z LTT SPS, Leese | | OE -20 0 20 40 60 80 100 120 0 20 40 60 80 100 INPUT VOLTAGE Vin (d8yV EMF) MODULATION MOD (%) AM € AM

0 Von, Iccq - Vcc = +00 IFsens, VoSC VIF - Vcc

@TTDITIItCT, 8 “OL Te 2 6 a 400 a y 12 ‘Osc Peers & (LSE ES SP g gC CTS, 2 & “Cope Te, § sof eT Ty ogo JL 2 “COP errr), § & “Coe fetter, &

8 LT IT Itr= me % 36 “CT TT TT |irc ase 3

# PPT Td Od 0 2 4 6 8 10 yg 0 2 4 6 8 10 SUPPLY VOLTAGE Vcc (V) 2 SUPPLY VOLTAGE Vcc (V) AM MPX «0 IFsens, VOD, ViF - Ta _ +o Sep, THD - Vin 3 a Se ee ee PoE i} al ae ~ . = gobi eer ys LEY 3 ee es ze PTET] fo | El & 8 TN a EE 9 2 s IN 2 6 ‘COCO. § § Po Not] 3 fe Litt tT vcr | 8 1 fe] Zo g se TTP T Ti [mim Js | beet [i ti AMBIENT TEMPERATURE Ta (°C) MAIN (L +R) SIGNAL INPUT VOLTAGE Vin (mVrms) TO 9999-05-26 «13/16

0 Sep, THD - fm 16 CAPTURE RANGE & LOCK RANGE

. 200 = WI: Pe ee eee g ; 2 40 coe Tio. 2 Ay 1 it | Nese Tf) | BSC TTT TU gb eA

2 OE eel TT, @ § AR SASS

On i, 8 een] 1 100, 1k 10k 15 Ww 19 21 23 MODULATION FREQUENCY fm (Hz) FREE RUNNING FREQUENCY fycg (kHz) MP Sep, THD - fyco MPx Sep, THD - Vcc 80; 16 80) 16 veew [TI TTT Ty) Pf sory z L+R = 180my, P= 20m Vems g orem tt TET TTT |, @ 6 fT TTT TT | foewe” |e e bem ET ef TLE TT” s 5 ASQ |. 8 & eS, E _ oH eS oe & 2 © Reet tt os A e LITT TTT TT) g 2 LAT TTT TT ¢ soft tT dpe PTT TL. eg LU ee Te a 20) a oa “a 20 a o4 OE ec ee LP Serer ty a LITT TTT HTT, ® LITT TTT ITT Titty, FREE RUNNING FREQUENCY fyco (kHz) SUPPLY VOLTAGE Vcc (V) MPX 20 VL(ON) + VL(OFF). fvco - Vcc gj i | i ti | it ty ® <i itbiwellTo,, 2 ss, TPT tT tt e Lit [wow TT Td. § Beppe ¢ a ee oe e [TTT TTT TTT Th. e LLTTTi Titty § 2 4 6 8 10 SUPPLY VOLTAGE Vcc (V) 8999-05-26 14/16

SDIP24-P-300-1.78 Unit : mm fo 24 13 3 foe oe eee oe | alg R 2 ) 3 N i Pod € LItItItittttitiiitli so 1 12 22.5MAX 22.010.2 po ) a WIC TAI es |_| bed | lia leat oS Weight : 1.2g (Typ.) 1999-05-26 15/16

SSOP24-P-300-0.65A Unit : mm 24 13 DHEAAARRERRG AFAAAAA RA AAA ay 2 S| & a; © wo n OUR HHH HHE HOGG RORAoaG 1 i 12 0.325TYP 0.2240.1 + foes pose 8.3MAX 7.8+0.2 Nx 2 gs brid = = wo o a 0.45+0.2 o Weight : 0.14g (Typ.) 1999-05-26 16/10

Product Information

TA2104BFN specifications and overview.

Summary

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

Description

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

Source title TA2104BFN Datasheet(PDF) - Toshiba Semiconductor

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