T85HFL100S02

T40HFL VISHAY | Alldatasheet

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Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 1 Fast Recovery Diodes, 40/70/85 A (T-Modules) T..HFL Series Vishay High Power Products

FEATURES

• Fast recovery time characteristics  Electrically isolated base plate  3500 V RMS isolating voltage  Standard JEDEC package  Simplified mechanical designs, rapid assembly  Large creepage distances  UL E78996 approved  RoHS compliant  Designed and qualified for industrial level

DESCRIPTION

The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commu tated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. PRODUCT SUMMARY IF(AV) 40/70/85 A D-55 RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS IF(AV) 40 70 85 A IF(RMS) 63 110 133 A IFSM

50 Hz 475 830 1300

A

60 Hz 500 870 1370

50 Hz 1130 3460 8550

60 Hz 1030 3160 7810

TJ Range - 40 to 125 °C

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2 Revision: 13-Feb-08

T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE trr CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = 25 °C µA T40HFL.. T70HFL.. T85HFL..

10 S02, S05, S10 100 150

20 S02, S05, S10 200 300

40 S02, S05, S10 400 500

60 S02, S05, S10 600 700

80 S05, S10 800 900

100 S05, S10 1000 1100

PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 40 70 85 A 70 °C Maximum RMS forward current I F(RMS) 63 110 133 A Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial T J = TJ maximum 475 830 1300 A t = 8.3 ms 500 870 1370 t = 10 ms 100 % VRRM reapplied 400 700 1100 t = 8.3 ms 420 730 1150 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 1130 3460 8550 A t = 8.3 ms 1030 3160 7810 t = 10 ms 100 % VRRM reapplied 800 2450 6050 t = 8.3 ms 730 2230 5520 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 11 300 34 600 85 500 A 2√s Low level value of threshold voltage V F(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 0.82 0.87 0.84 V High level value of threshold voltage V F(TO)2 TJ = 25 °C, (I > π x IF(AV)) 0.84 0.90 0.86 Low level value of forward slope resistance rf1 T J = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 7.0 2.77 2.15 mΩHigh level value of forward slope resistance rf2 T J = 25 °C, (I > π x IF(AV)) 6.8 2.67 2.07 Maximum forward voltage drop V FM IFM = π x IF(AV), TJ = 25 °C, tp = 400 µs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.60 1.73 1.55 V

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 3 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Note (1) Tested on LEM 300 A diodemeter tester Note (1) A mounting compound is recommended and the torque should be rechec ked after a period of about 3 hours to allow for the spread o f the compound Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS (1) T40HFL T70HFL T85HFL UNITS S02 S05 S10 S02 S05 S10 S02 S05 S10 Maximum reverse recovery time trr TJ = 25 °C, -dIF/dt = 100 A/µs IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290 nsTJ = 25 °C, -dIF/dt = 25 A/µs IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000 200 500 1000 Maximum reverse recovery charge Qrr TJ = 25 °C, -dIF/dt = 100 A/µs µCTJ = 25 °C, -dIF/dt = 25 A/µs BLOCKING PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS Maximum peak reverse leakage current I RRM TJ = 125 °C 20 mA RMS isolation voltage V ISOL

50 Hz, circuit to base, all terminals

shorted, TJ = 25 °C, t = 1 s 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS Junction operating temperature range T J - 40 to 125 Storage temperature range T Stg - 40 to 150 Maximum internal thermal resistance, junction to case per module RthJC DC operation 0.85 0.53 0.46 K/WThermal resistance, case to heatsink per module RthCS Mounting surface, flat, smooth and greased 0.2 Mounting torque ± 10 % base to heatsink M3.5 mounting screws (1) Non-lubricated threads 1.3 ± 10 % Nm busbar to terminal M5 screws terminals Non-lubricated threads 3 ± 10 % Approximate weight See dimensions - link at the end of datasheet 54 g 19 oz. Case style T-module D-55 ΔR CONDUCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

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T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics 100 110 120 130 0 1 02 03 04 05 0 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average F orward Current (A) T4 0 H FL. . Se r i e s R (DC) = 0.85 K/ W thJC 100 110 120 130 0 1 02 03 04 05 06 07 0 DC 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction P eriod Average F orward Current (A) T4 0 HFL. . Se r i e s R (DC) = 0.85 K/ W thJC 100 110 120 130 0 1 02 03 04 05 06 07 08 0 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average F orward Current (A) T7 0 HFL. . Se r i e s R (DC) = 0.53 K/ W thJC 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 DC 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction P eriod Average F orward Current (A) T7 0 HFL. . Se r i e s R (DC) = 0.53 K/ W thJC 100 110 120 130 0 1 02 03 04 05 06 07 08 09 0 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average Forward Current (A) T8 5 H FL. . Se r i e s R (DC) = 0.46 K/ W thJC 100 110 120 130 02 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 DC 30° 60° 90° 120° 180° Maximum Al lowable Cas e T emper atur e (°C) Conduction P eriod Average F orward Current (A) T8 5 H FL. . Se r i e s R ( DC ) = 0. 46 K/ W thJC

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 5 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics Fig. 11 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics 0 5 10 15 20 25 30 35 40 Average F orward Current (A) RM S Lim it Maximum Average F orward P ower L os s (W ) Conduction Angle 180° 120° 90° 60° 30° T4 0 HFL. . Se r i e s T = 1 2 5 ° C J 0 1 02 03 04 05 06 07 0 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Average F orward Curr ent (A) Maximum Average F orward Power L os s (W) T4 0 HFL. . Se r i e s T = 125°C J 100 0 1 02 03 04 05 06 07 0 Average F orward Current (A) RM S Lim it Maximum Average F orward P ower L os s (W) Conduction Angle 180° 120° 90° 60° 30° T7 0 H FL. . Se r i e s T = 125°C J 100 120 140 02 0 4 0 6 0 8 0 1 0 0 1 2 0 DC 180° 120° 90° 60° 30° RM S Li m i t Conduction Period Average F orwa rd Current (A) Maximum Aver age F orward P ower L os s (W) T 70HF L.. S eries T = 1 2 5 ° C J 100 110 0 1 02 03 04 05 06 07 08 09 0 Average F orward Current (A) RM S Lim it Maximum Average F orward P ower L os s (W) Conduction Angle 180° 120° 90° 60° 30° T 85HF L.. S eries T = 125°C J 100 120 140 160 0 20 40 60 80 100 120 140 DC 180° 120° 90° 60° 30° RM S Li m i t Conduction P eriod Average F orward Current (A) Maximum Average F orward P ower L os s (W) T 85HF L.. S eries T = 1 2 5 ° C J

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T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current Fig. 18 - Maximum Non-Repetitive Surge Current 100 150 200 250 300 350 400 450 11 0 1 0 0 Pe a k Ha lf Sine Wave F orward Current (A) Number Of E qual Amplitude H alf Cycle Current P uls es (N) T4 0 HFL. . Se r i e s Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And With Ra t e d V A p p l ie d Fo llo w in g Su rg e . RRM J 100 150 200 250 300 350 400 450 500 0.01 0.1 1 P eak H al f S i ne W ave F or war d Cur rent (A) P uls e T rain Duration (s ) Maximum Non R epetitive S urge Current T4 0HFL. . Se r i e s Initia l T = 125°C No Voltage Reapplied Ra t e d V Re a p p l i e d Vers us Puls e T rain Duration. RRM J 200 300 400 500 600 700 800 11 0 1 0 0 Peak Half S ine Wave Forward Current (A) Number Of E qual Amplitude Half Cycle Current P uls es (N) T 70HF L.. S eries Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And With R ated V Applied F ollowing S ur ge. J RRM 150 250 350 450 550 650 750 850 0.01 0.1 1 Pea k Ha lf Sine Wa ve Fo rw a rd Current (A) Pulse Train Duration (s) Maximum Non R epetitive S urge Current T7 0 HFL. . Se r i e s Initial T = 125°C No Voltage Reapplied Rated V Reapplied Vers us P uls e T rain Duration. RRM J 300 400 500 600 700 800 900 1000 1100 1200 11 0 1 0 0 Peak Half S ine Wave Forward Current (A) Number Of E qual Amplitude Half Cycle Current Pulses (N) T 85HF L.. S eries Initia l T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated Load Condition And With R ated V Applied F ollowing S urge. RRM J 300 400 500 600 700 800 900 1000 1100 1200 1300 0.01 0.1 1 P eak H alf S ine Wave F orward Curr ent (A) P uls e T rain Duration (s ) Ma ximum Non R epetitive S urge Current Initia l T = 125°C No Vo lta ge Reap p lied R ated V R eapplied Vers us P uls e T rain Duration. RRM J T8 5 HFL. . Se r i e s

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 7 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Fig. 19 - Recovery Time Characteristics Fig. 20 - Recovery Charge Characteristics Fig. 21 - Recovery Current Characteristics Fig. 22 - Recovery Time Characteristics Fig. 23 - Recovery Charge Characteristics Fig. 24 - Recovery Current Characteristics 0.45 0.46 0.47 0.48 0.49 0.5 0.51 00101 100A 220A 172A 50A R ate Of F all Of F orward Current - di/dt (A/µs )Maximum R evers e R ecovery T ime - T rr (µs ) I = 300A FM T4 0 HFL. . S0 2 T7 0 HFL. . S0 2 T = 1 2 5 ° C J 10 20 30 40 50 60 70 80 90 100 100A 220A 172A 50A R ate Of F all Of F orward Current - di/dt (A/µs )Ma ximum Reverse Rec overy Cha rg e - Qrr (µC) I = 300A FM T4 0 HFL. . S0 2 T7 0 HFL. . S0 2 T = 1 2 5 ° C J 10 20 30 40 50 60 70 80 90 100 100A 220A 172A 50A R ate Of F all Of F orward Current - di/dt (A/µs )Maximum R ever s e R ecover y Curr ent - I rr (A) I = 300A T4 0 HFL. . S0 2 T7 0 HFL. . S0 2 T = 1 2 5 ° C FM J 0.6 0.7 0.8 0.9 1.1 00101 100A 220A 172A 50A Maximum R evers e R ecovery T ime - T rr (µs ) R ate Of F all Of F orward Current - di/dt (A/µs ) I = 300A FM T4 0 HFL. . S0 5 T7 0 HFL. . S0 5 T = 1 2 5 ° C J 10 20 30 40 50 60 70 80 90 100 Rate Of F a ll Of Forward Current - di/ dt (A/ µs)Maximum R evers e R ecovery Charge - Qrr (µC) 220A 172A 100A 50A I = 300A FM T4 0 HFL. . S0 5 T7 0 HFL. . S0 5 T = 1 2 5 ° C J 10 20 30 40 50 60 70 80 90 100 220A 172A 100A 50A Maximum Reve rse Rec overy Current - Irr (A) R ate Of F all Of F orward Current - di/dt (A/µs ) I = 300A FM T4 0 HFL. . S0 5 T7 0 HFL. . S0 5 T = 125 °C J

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T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) Fig. 25 - Recovery Time Characteristics Fig. 26 - Recovery Charge Characteristics Fig. 27 - Recovery Current Characteristics Fig. 28 - Recovery Time Characteristics Fig. 29 - Recovery Charge Characteristics Fig. 30 - Recovery Current Characteristics 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 00101 100A 50A 200A Maxi mum R evers e R ecovery T ime - T rr (µ s ) R ate Of F all Of F orward Current - di/dt (A/µs ) I = 300A FM T4 0 HFL. . S1 0 T7 0 HFL. . S1 0 T = 125 °C J 10 20 30 40 50 60 70 80 90 100 100A 50A 200A Maximum R evers e R ecovery Charge - Qrr (µC) R a te Of F a ll Of Forward Current - d i/ d t (A/ µs) I = 300A FM T4 0 HFL. . S1 0 T7 0 HFL. . S1 0 T = 1 2 5 ° C J 10 20 30 40 50 60 70 80 90 100 100A 50A 200A Maximum R evers e R ecovery Current - Irr (A) R a te Of F all Of F orward Current - di/dt (A/µs ) I = 300A FM T4 0 HFL. . S1 0 T7 0 HFL. . S1 0 T = 1 2 5 ° C J 0.6 0.7 0.8 0.9 1.1 1.2 00101 100A 50A 200A Ma ximum Reverse R e cove ry T im e - Trr (µs) R ate Of F all Of F orward Current - di/dt (A/µs ) T8 5 HFL. . S0 2 T = 1 2 5 ° C I = 300A J FM 10 20 30 40 50 60 70 80 90 100 200A 100A 50A Maximum R evers e R ecovery Charge - Qrr (µC) R ate Of F all Of F orward Current - di/dt (A/µs ) T8 5 HFL. . S0 2 T = 1 2 5 ° C I = 300A J FM 10 20 30 40 50 60 70 80 90 100 200A 100A 50A Maximum Reverse Rec overy Current - Irr (A) Ra t e O f Fa l l O f Fo rw a rd C u r re n t - d i / d t ( A / µ s) T8 5 HFL. . S0 2 T = 125°C I = 300A J FM

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 9 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Fig. 31 - Recovery Time Characteristics Fig. 32 - Recovery Charge Characteristics Fig. 33 - Recovery Current Characteristics Fig. 34 - Recovery Time Characteristics Fig. 35 - Recovery Charge Characteristics Fig. 36 - Recovery Current Characteristics 0.8 0.9 1.1 1.2 1.3 00101 100A 50A 200A Maximum Reverse Rec overy T ime - T rr (µs) R ate Of F all Of F orward Current - di/dt (A/µs ) I = 300A T8 5 HFL. . S0 5 T = 1 2 5 ° C FM J 10 20 30 40 50 60 70 80 90 100 200A Maximum R evers e R ecovery Charge - Qrr (µC) Ra t e O f Fa l l O f Fo rw a rd C u rre n t - d i/ d t ( A / µs) T8 5 HFL. . S0 5 T = 1 2 5 ° C 100A 50A J I = 300A FM 10 20 30 40 50 60 70 80 90 100 100A 50A 200A Maximum Reverse R ec overy Current - Irr (A) Ra t e O f Fa l l O f Fo rw a rd C u rre n t - d i / d t ( A / µ s) T8 5 HFL. . S0 5 T = 125°C I = 300A J FM 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 00101 100A 50A 200A Maximum R evers e R ecovery T ime - T rr (µs ) R ate Of F all Of F orward Current - di/dt (A/µs ) T8 5 HFL. . S1 0 T = 125°C I = 300A J FM 10 20 30 40 50 60 70 80 90 100 200A Maximum R evers e R ecovery Charge - Qrr (µC) R ate Of F all Of F orward Current - di/dt (A/µs ) 100A 50A T8 5 HFL. . S1 0 T = 125°C J I = 300AFM 10 20 30 40 50 60 70 80 90 100 100A 50A 200A Maximum R everse Rec overy Current - Irr (A) I = 300A T8 5 HFL. . S1 0 T = 125°C R ate Of F all Of F orward Current - di/dt (A/µs ) FM J

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93184 T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) Fig. 37 - Frequency Characteristics Fig. 38 - Frequency Characteristics Fig. 39 - Maximum Forward Energy Power Loss Characteristics 1E1 1E2 1E3 1E4 1E 1 1E2 1E3 1E 50 Hz 400 1000 200 1500 2500 10000 20000 5000 P eak F orward Curr ent (A) Pu lse Ba se w id t h ( µ s) tp 1E4 T4 0 H FL. . Se r i e s Si n u so i d a l Pu l se T = 70°C C E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 5000 Pulse Ba se w id t h ( µs) T4 0 HFL. . Series Tr a p e zo i d a l Pu l se T = 7 0 ° C C tp 1E1 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 10000 20000 5000 P eak F or war d Curr ent (A) P uls e B as ewidth (µs ) tp 1E 4 Si n u so i d a l Pu l se T = 90°CC T40HFL.. S eries E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 5000 Pulse Ba se w id t h ( µs) Tra p e zo i d a l Pu l se tp T40 HFL. . 1E1 T = 9 0 ° C C 1E 0 1E 1 1E 2 1E 3 1E 4 1E 1 1E2 1E3 1E 0.01 0.02 0.04 0.1 0.2 0.4 20 joules per pulse P eak F orward Curr ent (A) P uls e B as ewidth (µs ) tp 1E 4 T 40HFL.. S eries S inusoid al Pulse T = 125 °C J E1 1E2 1E3 1E4 0.01 0.02 0.04 0.1 0.2 0.4 20 joules per puls e Tr a p e z o i d a l Pu l se Pu lse Ba se w id t h ( µs) T40HFL.. S eries T = 125°C di/dt = 50A/µs 1E1 tp J

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 11 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Fig. 40 - Frequency Characteristics Fig. 41 - Frequency Characteristics Fig. 42 - Maximum Forward Energy Power Loss Characteristics 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 10000 20000 5000 P eak F orward Current (A) Pulse Ba se w id t h (µs) tp 1E4 T7 0 H FL. . Se r i e s Sinusoid a l Pulse T = 7 0 ° C C 1E 1 1E 2 1E 3 1E 4 50 Hz 400 1000 200 1500 2500 5000 Pu lse Ba se w id t h ( µ s) tp 1E1 T70HFL.. S eries Tr a p e z o i d a l Pu l se T = 70°C C 1E1 1E2 1E3 1E4 1E 1 1E2 1E 3 1E 4 50 Hz 400 1000 200 1500 2500 10000 20000 5000 Pe a k Fo rw a rd C urre n t (A) Pu lse Ba se w id t h ( µ s) tp 1E4 T7 0 H FL. . Se r i e s S inusoidal Puls e T = 90°C C 1E1 1E2 1E3 1E 4 50 Hz 400 1000 200 1500 2500 5000 Pu lse Ba se w id t h ( µs) tp 1E1 T7 0 H FL. . Se r i e s Tr a p e zo i d a l Pu l se T = 90°C C 1E0 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E 4 0.01 0.02 0.04 0.1 0.2 0.4 20 joules per puls e P eak F or war d Curr ent (A) Pu lse Ba se w id t h ( µ s) tp 1E4 T7 0 H FL. . Se r i e s Si n u so i d a l Pu l se T = 125°CJ

1 E 11 E 21 E 31 E 4

0.1 2 0 j oules per puls e 0.4 0.2 0.04 0.02 0.01 T7 0 H FL. . Se r i e s T rapez oidal puls e T = 125°C di /dt = 5 0 A/µ s P uls e B as ewidth (µs ) 1E1 tp J

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93184 T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) Fig. 43 - Frequency Characteristics Fig. 44 - Frequency Characteristics Fig. 45 - Maximum Forward Energy Power Loss Characteristics 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 10000 20000 5000 Pu lse Ba se w id t h ( µ s) P eak F or war d Cur rent (A) tp 1E4 T 85HFL.. S eries Si n u so i d a l Pu l se T = 7 0° CC 1E1 1E2 1E3 1E 4 50 Hz 400 1000 200 1500 2500 5000 Pu lse Ba se w id t h (µs) tp 1E 1 T 85HFL.. S eries Tr a p e zo i d a l Pu l se T = 70°C C 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 50 Hz 400 1000 200 1500 2500 10000 20000 5000 Peak F orward Current (A) Pu lse Ba se w id t h ( µs) tp 1E4 T85HFL.. S eries Sinusoidal Pulse T = 90°C C 1E 1 1E 2 1E 3 1E 4 50 Hz 400 1000 200 1500 2500 5000 Pu lse Ba se w id t h ( µ s) tp 1E1 T85HFL.. S eries T rapez oidal P uls e T = 90°C C 1E 0 1E 1 1E 2 1E 3 1E 4 1E 1 1E 2 1E3 1E4 0.01 0.02 0.04 0.1 0.2 0.4 20 joules per puls e Pe a k Fo rw a rd C urre n t (A) Pu lse Ba se w id t h ( µ s) tp 1E4 T85HFL.. S eries Si n u so i d a l Pu l se T = 125 °C J 0.01 0.02 0.04 0.1 0.2 0.4 20 joules p er p ulse P uls e B as ewidth (µs ) tp 1E1 T8 5 H FL. . Se r i e s Trapezoid al Pulse T = 125°C di /dt = 5 0 A/µs J

Document Number: 93184 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 13-Feb-08 13 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T -Modules) Vishay High Power Products Fig. 46 - Forward Voltage Drop Characteristics F ig. 47 - Forward Voltage Drop Characteristics Fig. 48 - Forward Voltage Drop Characteristics Fig. 49 - Thermal Impedance ZthJC Characteristics 100 1000 T = 25°C J Ins tantaneous F orward Current (A) Ins tantaneous F or ward V oltage (V) T = 1 2 5 ° C J T4 0 HFL. . Se r i e s 100 1000 10000 01234567 T = 2 5 ° C J In st a n t a ne o u s Fo rwa rd C u rre n t (A ) I ns tantaneous F or ward Voltage (V) T7 0 HFL. . Se r i e s T = 1 2 5 ° C J 100 1000 10000 01234567 T = 2 5 ° C J Ins tantaneous F orward Current (A) I ns tantaneous F or ward V oltage (V ) T = 1 2 5 ° C J T8 5 H FL. . Se r i e s 0.001 0.01 0.1 Square Wave P uls e Duration (s ) thJCTr a n si e n t Th e r m a l Im p e d a n c e Z ( K/ W) St e a d y St a t e V a l u e : R = 0.85 K/ W R = 0.53 K/ W R = 0.46 K/ W (DC Operation) T4 0 HFL. . Se r i e s T7 0 HFL. . Se r i e s T8 5 HFL. . Se r i e s thJC thJC thJC

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93184 T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T -Modules) ORDERING INFORMATION TABLE CIRCUIT CONFIGURATION - Module type - Current rating - Fast recovery diode - Voltage code x 10 = V RRM -t rr code S02 = 200 ns S05 = 500 ns S10 = 1000 ns 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) Device code 513 24 T 40 HFL 100 S10 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95313

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.