T810-XXXB STMICROELECTRONICS | Alldatasheet

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Technical content

May 1998 Ed : 1A Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) Tc =110 °C8 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 85 A tp = 10 ms 80 I2t I2t value for fusing tp = 10 ms 32 A 2s dI/dt Critical rate of rise of on-state current IG = 50mA diG /dt = 0.1A/µs Repetitive F = 50 Hz

20 A/ µs

Operating junction temperature range - 40 to + 150 - 40 to + 125 T Maximum temperature for soldering during 10 s 260 °C ABSOLUTE MAXIMUM RATINGS Symbol Parameter T810-/T835- Unit 400B 600B VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 V A2 G DPAK (Plastic) T810-xxxB T835-xxxB HIGH PERFORMANCE TRIACS ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY

FEATURES

The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applica- tions, using surface mount technology where high commutating and surge performances are re- quired (like power tools, Solid State Relay).

DESCRIPTION

PG(AV) = 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) GATE CHARACTERISTICS (maximum values) Symbol Test Conditions Quadrant Suffix Unit T810 T835 IGT VD =12V (DC) RL=33Ω Tj=25°C I-II-III MAX 10 35 mA VGT VD =12V (DC) RL=33Ω Tj=25°CI - I I - I I I M A X 1 . 3 V VGD VD =VDRM RL=3.3kΩ Tj=125°C I-II-III MIN 0.2 V IL IG =1.2 IGT Tj=25°C I-II-III MAX 25 60 mA IH * IT= 100mA gate open Tj=25°C MAX 15 35 mA VTM * ITM = 11A tp= 380µs Tj=25°CM A X 1 . 5 V IDRM IRRM VDRM Rated VRRM Rated Tj=25°CM A X 1 0 µA Tj=125°CM A X 2 m A dV/dt *Linear slope up to VD =67%V DRM gate open Tj=125°C MIN 50 500 V/ µs (dI/dt)c *(dV/dt)c = 0.1V/µs Tj=125°C MIN 5.4 9 A/ms (dV/dt)c = 15V/µs Tj=125°C MIN 2.7 4.5 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1.

ELECTRICAL CHARACTERISTICS

Symbol Parameter Value Unit Rth (j-c)Junction to case for DC 2.1 °C/W Rth (j-c)Junction to case for AC 360° conduction angle ( F= 50 Hz) 1.6 °C/W Rth (j-a)Junction to ambient (S = 0.5 cm2) 70 °C/W THERMAL RESISTANCES ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment T 8 10 - 600 B TRIAC CURRENT SENSITIVITY VOLTAGE PACKAGE B = DPAK T810-xxxB / T835-xxxB

P(W) α α α α α I (A)T(RMS) 180° α α Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only). 0123456780 P(W) α α α α α I (A)T(RMS) 180° α α Fig 1b: Maximum power dissipation versus RMS on-state current. (T835 only) 0 25 50 75 100 1250 P(W) Tcase (°C) Rth=0°C/W Rth=5°C/WRth=10 °C/W Rth=15 °C/W 125 110 120 115 α Tamb(°C) Fig 2: Correlation between maximum power dissi- pation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. 0 25 50 75 100 1250 I (A)T(RMS) α Tamb(°C) Fig 3: RMS on-state current versus ambient tem- perature. 1E-3 1E-2 1E-1 1E+00.1 0.2 0.5 1.0 K=[Zth(j-c)/Rth(j-c)] tp(s) Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 I ,I [Tj]/I ,I [Tj=25°C]GT H GT H IH Tj(°C) IGT Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typi- cal values). T810-xxxB / T835-xxxB

I (A)TSM Tj initial=25°C F=50Hz Number of cycles Fig 6: Non repetitive surge peak on-state current versus number of cycles. 12 5 1 010 100 500 I (A),I²t(A²s)TSM Tj initial=25°C ITSM I²t tp(ms) Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I 2t. 1.0 10.0 100.0 I (A)TM Tj=25°C Tj max.: Vto=0.8V Rt=60m Ω Tj=Tj max. V (V)TM Fig 8: On-state characteristics (maximum values). 0 2 4 6 8 10 12 14 16 18 200 100 Rth(j-a) (°C/W) S(Cu) (cm²) Fig 9: Thermal resistance junction to ambient ver- sus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). T810-xxxB / T835-xxxB

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. PACKAGE MECHANICAL DATA DPAK Plastic H G B E D C A 0.60 MIN. REF. DIMENSIONS Millimeters Inches A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 0.031 L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° WEIGHT : 0.30g TYPE MARKING T810-400B T8 1040 T810-600B T8 1060 T835-400B T8 3540 T835-600B T8 3560 MARKING FOOT PRINT (millimeters) 6.7 6.7 6.7 1.61.6 2.32.3 T810-xxxB / T835-xxxB