T820750A_09 PAM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 750 Amperes Average

2400 Volts

Revision Date: 04/20/2009 T820 750A T820 750A (Outline Drawing) Ordering Information: Select the complete 12 digit module part number from the table below. Example: T820167504DH is a 1600V 750A Phase Control SCR. Voltage Current Turn-off Time Gate Current Lead Type VRRM (Volts) IT(av) (A) tq (µsec) IGT (mA) Code T820 02 through 200V through 2400V 750A 200 µsec (Typical) 150 mA DH 12” Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Packaging Excellent Surge and I 2t Ratings Applications: Power Supplies Motor Control T820 750A Phase Control SCR

750 Amperes Average, 2400 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 750 Amperes Average Revision Date: 04/20/2009 T820 750A Absolute Maximum Ratings Characteristics Symbol Units Non-Repetitive Transient Peak Reverse Blocking Voltage V RSM V RRM + 100V Volts RMS On-State Current, TC = 70°C IT(RMS) 1175 Amperes Average Current 180° Sine Wave, TC = 70°C I T(AV) 750 Amperes RMS On-State Current, TC = 55°C I T(RMS) 1500 Amperes Average Current 180° Sine Wave, TC = 55°C I T(AV) 960 Amperes Peak One Cycle Surge On-State Current (Non-Repetitive) 60 Hz I TSM 12,000 Amperes Peak One Cycle Surge On-State Current (Non-Repetitive) 50 Hz I TSM 10,950 Amperes Critical Rate-of-rise of On-State Current (Non-Repetitive) di/dt 400 A/ μsec Critical Rate-of-rise of On-State Current (Repetitive) di/dt 150 A/ μsec I t (for Fusing) for One Cycle, 60 Hz I t 600,000 A sec Peak Gate Power Dissipation P GM 16 Watts Average Gate Power Dissipation P G(av) 3 Watts Operating Temperature TJ -40 to +125 °C Storage Temperature Tstg -40 to +150 °C Approximate Weight 8 oz. 227 g Mounting Force 3000 to 3500 lb. 1360 to 1590 kg. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 750 Amperes Average Revision Date: 04/20/2009 T820 750A Thermal Characteristics Maximum Thermal Resistance, Double Sided Cooling Max. Units Junction-to-Case Case-to-Sink RΘ(J-C) RΘ(C-S) 0.037 0.020 °C/W °C/W Electrical Characteristics, TJ=25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Leakage Current I RRM T J=125°C, VR = VRRM 60 mA Repetitive Peak Forward Leakage Current I DRM T J=125°C, VD = VDRM 60 mA Peak On-State Voltage V TM I FM=1500A peak, Duty Cycle < 0.1 % 1.65 V Threshold Voltage, Low-level Slope Resistance, Low-level V(TO)1 rT1 TJ = 125°C, I = 15%IT(AV) to πIT(AV) 0.97268 0.4950 V mΩ Threshold Voltage, High-level Slope Resistance, High-level V(TO)2 rT2 TJ = 125°C, I = πIT(AV) to ITSM 1.2785 0.3365 V mΩ VTM Coefficients, Low-level TJ = 125°C, I = 15%IT(AV) to πIT(AV) VTM = A+ B Ln(I) +C(I) + D Sqrt(I) A = B = C = D = 0.50605 0.073285

2.864 E-04

0.007176 VTM Coefficients, High-level TJ = 125°C, I = πIT(AV) to ITSM VTM = A+ B Ln(I) +C(I) + D Sqrt(I) A = B = C = D = -10.717 2.2006

7.43 E-04

-0.12418 Typical Turn-On Time t on IT = 1000A, VD = 600 V 5 µs Typical Turn-Off Time tq T j = 125°C, IT = 250A, diR/dt = 50A/µs Reapplied dv/dt = 20 V/µs Linear to 80% VDRM 200 µs Minimum Critical dv/dt – Exponential to VDRM dv/dt TJ = 125°C 300 V/µs Gate Trigger Current I GT TJ = 25°C, VD = 12 V 150 mA Gate Trigger Voltage V GT TJ = 25°C, VD = 12 V 3.0 V Non-Triggering Gate Voltage V GDM TJ = 125°C, VD = VDRM 0.15 V Peak Forward Gate Current I GTM 4 A Peak Reverse Gate Voltage V GRM 5 V

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 750 Amperes Average Revision Date: 04/20/2009 T820 750A 10 100 1000 10000 100000 On-State Voltage - Vtm - Volts Instantaneous On-State Current - Itm - Amperes Maximum On-State Forward Voltage Drop ( Tj = 125 °C ) 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.0001 0.001 0.01 0.1 1 10 Thermal Impedance - Rjc - °C/W Time - t - Seconds Maximum Transient Thermal Impedance (Junction to Case) 15° 30° 60° 90° 120° 180° 200 400 600 800 1000 1200 1400 1600 0 100 200 300 400 500 600 700 800 Maximum Power Dissipation Per SCR - Watts Average On-State Current - It(av) - Amperes Maximum On-State Power Dissipation (Sinusoidal Waveform) 15° 30° 60° 90° 120° 180° 100 110 120 130 0 100 200 300 400 500 600 700 800 900 Max. Case Temperature - Tcase - °C Average On-State Current - It(av) - Amperes Maximum Allowable Case Temperature (Sinusoidal Waveform) 15° 30° 60° 90° 120° 180° 270° 360° 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 Maximum Power Dissipation Per SCR - Watts Average On-State Current - It(av) - Amperes Maximum On-State Power Dissipation (Rectangular Waveform) 15° 30° 60° 90° 120° 180° 270° 360°C 100 110 120 130 0 200 400 600 800 1000 1200 1400 Max. Case Temperature - Tcase - °C Average On-State Current - It(av) - Amperes Maximum Allowable Case Temperature (Rectangular Waveform)