T816-4500-18-22 GREEGOO | Alldatasheet

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High Power Semiconductor Devices Greegoo Electric 5.2008 http://www.greegoo.com Phase control thyristor Key Parameters Voltage Ratings V DRM 1800~2200 V I T(AV) A I TSM kA V TO V T C = 25，125 °C r T mΩ 4500-20 450 mA V DM = V DRM V RM = V RRM Applications tp = 10 ms High power drive High voltage supplies Motor control V DSM = V DRM + 100 V RSM = V RRM + 100 Features Outline Double-side cooling High mean current High surge current Thermal & Mechanical Data Min Type Junction to Case Case ro Heatsink -40 - -40 - - 80 - 2.5 Current Ratings Min Max Unit I T(AV) Mean On-State Current - 4540 A I T(RMS) RMS On-State Current - 7130 A I TSM Surge (non-repetitive) On-State Current - 65.8 kA I 2t Limiting load integral - 2160 104A2s Type 125 140 kN kg Test Conditions F T v j I DRM = I RRM = Symb. Parameter Junction Temperature Parameter R jc R cs Thermal Resistance Thermal Resistance VDRM/VRRM(V)4540 Test ConditionsDevice Type 65.8 1800 2200 0.96 0.059 Half Sine Wave, TC=70 oC 0.0065 Max Unit K / W K / W 10ms, Half Sine Wave, TC =125 oC, VR = 0 Sine Wave, 10ms 0.002 m TC =70 oC T stg Symb. Weight Storage Temperature Mounting Force T816 4500-18 T816 4500-22 2000T816 T1 00-1-

Greegoo Electric 5.2008 http://www.greegoo.com High Power Semiconductor Devices Phase control thyristor Characteristics Min Type Max Unit T C = 25 °C，I TM = 6000 A - - 1.45 V T vj = 125 °C - - 0.96 V T vj = 125 °C - - 0.059 mΩ T C = 25 °C，I G = 400 mA，I TM = 50 A，V D = 12 V - - 450 mA T C = 25 °C，I G = 400 mA，V D = 12 V - - 1000 mA Dynamic Parameters Min Type Max Unit - - 300 V/µs dv/dt = 30 V/µs，VR ≥ 50 V，-di/dt = 25 A/µs，I T = 250 A Gate Parameters Min Type Max Unit 30 - 200 mA - - 3 V 0.3 - - V - - 16 V - - 5 V - - 4 A - - 20 W - - 4 W di /dt dv /dt T C = 125 °C，V DM = 2/3 V DRM，f = 50 Hz，t = 5 s， µs400 - 200 A/µsI TM = (2～3) IT(AV)，I FG = 1.0 A，tr = 0.5 µs T C = 125 °C, 67%V DRM T C = 125 °C，tp = 1000 µs，V DM = 67% V DRM，f = 1 Hz， T C = 25 °C，-di /dt = 5 A/µs，tp = 700 µs，I T = 500 A， t q 4500 -Q r -V R = 50 V, trapezoid wave Symb. V TO r T I H I L Slope resistance Holding current Reverse leakage current Symb. Parameter Threshold voltage V TM I DRM I RRM Peak on-state voltage Latching current Gate non-trigger voltage Turn-off time Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger voltage Parameter Parameter Recovery Charge Fig1. Peak On-state Voltage Vs. Peak On-state Current Gate power losses (mean) Peak forward gate current Gate power losses T C = 125 °C，square wave，t = 3s，open circuit T C = 125 °C，square wave，t = 3s，open circuit P G(AV) P GM T C = 125 °C，square wave，t = 3s，open circuit Forward leakage current Fig2. Maximum Thermal Impedance Vs. Time V RGM I FGM I GT V GT V GD V FGM T C = 25 °C，V D = 12V，R L = 6Ω T C = 25 °C，V D = 12V，R L = 6Ω T C = 125 °C，V D = V DRM Gate trigger current Symb. Test Conditions T C = 125 °C，square wave，t = 3s，open circuit T C = 125 °C，sine wave，t = 3s，open circuit Peak forward gate voltage Peak reverse gate voltage µC T C = 25 °C，125 °C，V DRM/V RRM Test Conditions 450 mA- Test Conditions Peak On-state Voltage Vs. Peak On-state Current T j = 125 °C 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 100 1000 10000 I TM / A V TM / V Maximum Thermal Impedance Vs. Time 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.001 0.01 0.1 1 10 100 Time / s Z t / K / W T1 00-1-

High Power Semiconductor Devices Greegoo Electric 5.2008 http://www.greegoo.com Phase control thyristor Fig7. Surge Current Vs. Cycles Fig8. I2 t Vs. Time Fig3. Maximum Power Dissipation Vs. Mean On-state Current Fig4. Maximum Case Temperature Vs. Mean On-state Current Fig5. Maximum Power Dissipation Vs. Mean On-state Current Fig6. Maximum Case Temperature Vs. Mean On-state Current Maximum Power Dissipation Vs. Mean On-state Current ▲=180° 120° 90° 60° 30° 2000 4000 6000 8000 10000 0 1000 2000 3000 4000 5000 6000 I T(AV) / A P T(AV)(max) / W Maximum Case Temperature Vs. Mean On-state Current ▲=180°120°90°60° 30° 100 110 120 130 0 1000 2000 3000 4000 5000 6000 I T(AV) / A T C(max) / °C Maximum Power Dissipation Vs. Mean On-state Current DC ▲=270° 180° 120° 90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 0 1000 2000 3000 4000 5000 6000 I T(AV) / A P T(AV)(max) / W Maximum Case Temperature Vs. Mean On-state Current 60° 30° 100 110 120 130 0 1000 2000 3000 4000 5000 6000 I T(AV) / A T C(max) / °C Surge Current Vs. Cycles 1 10 100 n / @50 Hz I TSM / ×103 A I 2t Vs. Time 0.00 5.00 10.00 15.00 20.00 25.00 1 10 Time / ms I 2 t / ×106A2s T1 00-1-

Greegoo Electric 5.2008 http://www.greegoo.com High Power Semiconductor Devices Phase control thyristor Fig9. VGT Vs. IGT Fig10. Gate Trigger Area at various Temperature A is Recommended Triggering Area. B is Unreliable Triggering Area. C is Recommended Gate Load Line. V GT Vs. I GT WP GM = 20 0 1 2 3 4 I GT / A V GT / V A B Gate Trigger Area at various Temperature 0 100 200 300 400 500 I GT / mA V GT / V T j=25 oC T j= - 40 oC T j=125oC C T1 00-1-