T70RIA

T50RIA IRF | Alldatasheet

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Technical content

Features

Electrically isolated base plate Types up to 1200 V RRM

3500 V RMS isolating voltage

Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built.

Description

MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules 50 A 70 A 90 A T..RIA SERIES Bulletin I27105 rev. B 02/02 www.irf.com

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com IT(AV) Max. average on-state current 50 70 90 A 180° conduction, half sine wave @ Case temperature 70 70 70 °C IT(RMS) Max. RMS on-state current 80 110 141 A ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied surge current 1100 1400 1500 t = 10ms 100% VRRM 1150 1460 1570 t = 8.3ms reapplied Sine half wave, I2t Maximum I 2t for fusing 8550 13860 15900 A 2s t = 10ms No voltage In itial TJ = TJ max. 7800 12650 14500 t = 8.3ms reapplied 6050 9800 11250 t = 10ms 100% VRRM 5520 8950 10270 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 85500 138500 159100 A 2√s t = 0.1 to 10ms, no voltage reapplied voltage VT(TO)2 High level value of threshold 1.13 0.88 0.88 (I > π x IT(AV)), @ TJ max. voltage slope resistance rt2 High level value on-state 3.3 3.2 2.6 (I > π x IT(AV)), @ TJ max. slope resistance VTM Maximum on-state voltage drop 1.60 1.55 1.55 V I TM = π x IT(AV), TJ = 25°C., tp = 400µs square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 IH Maximum holding current 200 mA Anode supply = 6V initial I T = 30A, TJ = 25°C IL Maximum latching current 400 mA Anode supply = 6V resistive load = 10 Ω gate pulse: 10V, 100µs, TJ = 25°C tgd Typical turn-on time 0.9 µs T J = 25oC Vd = 50% VDRM, ITM = 50 A Ig = 500mA, tr <= 0.5, tp >= 6µs trr Typical reverse recovery time 3.0 µs T J =125°C, ITM = 50A tp = 300µs di/dt =10A/µs tq Typical turn-off time 110 µs T J = TJ max., ITM = 50A, tp = 300µs, -di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM Parameter T50RIA T70RIA T90RIA Units Conditions On-state Conduction ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage V DRM/VRRM, maximum repetitive V RSM, maximum non-repetitive I DRM/IRRM max. Code peak reverse voltage peak reverse voltage @ 25°C VV µ A 10 100 150 20 200 300 T50RIA 40 400 500 T70RIA 60 600 700 100 T90RIA 80 800 900 100 1000 1100 120 1200 1300 Switching Parameter T50RIA T70RIA T90RIA Units Conditions

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com TJ Max. junction operating -40 to 125 °C temperature range Tstg Max. storage temperature -40 to 150 °C range RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction junction to case RthCS Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat and greased case to heatsink T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2) torque ± 10% terminals 3 ± 10% M5 screw terminals wt Approximate weight 54 g See outline table Case style D-56 T type IRRM Maximum peak reverse and 15 mA T J = TJ = TJ max. IDRM off-state leakage current VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, TJ = 25°C, t = 1s dv/dt Critical rate of rise of off-state 500 V/µs T J = TJ max., linear to 80% rated VDRM (1) voltage Blocking Thermal and Mechanical Specifications (2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Parameter T50RIA T70RIA T90RIA Units Conditions Parameter T50RIA T70RIA T90RIA Units Conditions Triggering PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max. -VGT Max. peak negative 10 10 10 V gate voltage VGT Max. required DC gate 4.0 4.0 4.0 V T J = - 40°C Anode supply = 6V, resistive voltage to trigger 2.5 2.5 2.5 T J = 25°C load; Ra = 1Ω 1.5 1.5 1.5 T J = TJ max. IGT Max. required DC gate 250 270 270 T J = - 40°C Anode supply = 6V, resistive current to trigger 100 120 120 mA T J = 25°C load; Ra = 1Ω 50 60 60 T J = TJ max. that will not trigger IGD Max. gate current 5.0 6.0 6.0 mA that will not trigger di/dt Max. rate of rise of 200 A/µs V D = 0.67 rated VDRM, ITM = 2 x rated di/dt turned-on current 180 I g = 400mA for T50RIA and Ig = 500mA for 160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs

150 For repetitive value use 40% non-repetitive

Per JEDEC std. RS397,5.2.2.6 Parameter T50RIA T70RIA T90RIA Units Conditions non lubricated threads (1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Sinusoidal conduction @ TJ max. Rectangular conduction @ T J max.Devices Units180o 120o 90o 60o 30o 180o 120o 90o 60o 30o ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) All dimensions in millimeters (inches) Outline Table Device Code T 50 RIA 120 Circuit configuration 2 3 4 1 - Module type 2 - Current rating 3 - Circuit configuration 4 - Voltage code : code x 10 = V RRM Ordering Information Table G

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 4 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 1 02 03 04 05 06 07 08 0 DC30 120 180 Average On-s tate Current (A) Max imum Allowable Cas e T emperature ( C) Conduction P eriod T 50R IA.. S eries R (DC) = 0.65 K / WthJC 0 2 04 06 08 0 1 0 0 1 2 0 Max imum Allowable Ambient T emper ature ( C)

0.3 K/W

10 K/W

5 K /W

3 K/W

2 K/W

1.5 K/W

1 K/W

0.7 K/W

0.5 K/W

R = 0.1 K/W - Delta R thSA 0 1 02 03 04 05 0 RM S Li m i t Conduction Angle 180 120 Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) T 50R IA.. S eries T = 1 2 5 CJ 02 0 4 0 6 0 8 0 1 0 0 1 2 0 Max imum Allowable Ambient T emperature ( C) R = 0.1 K/W - Delta R thSA

5 K/W

0 1 02 03 04 05 06 07 08 0 DC 180 120 RM S Li m i t Conduction P eriod Max imum Average On-s tate P ower L os s (W) Average On-s tate Current (A) T 50R IA.. S eries T = 1 2 5 C J 100 110 120 130 0 1 02 03 04 05 06 0 120 180 Average On-s tate Current (A) Maximum Allowable Cas e T emperature ( C) Conduction Angle T 50R IA.. S eries R (DC) = 0.65 K / WthJC

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 9 - Gate Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 500 600 700 800 900 1000 1100 1200 11 0 1 0 0 Number Of E qual Amplitude H alf Cycle Cur rent P uls es (N) Peak Half S ine Wave On-state Current (A) T5 0 RI A . . Se r i e s Initial T = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM J 500 600 700 800 900 1000 1100 1200 1300 0.01 0.1 1 P eak H alf S ine Wave On-s tate Current (A) Pu lse Tra in Du ra t io n ( s) Maximum Non R epetitive S urge Cur rent Versus Pulse T rain Duration. Control Of Conduction May Not B e Maintained. Initial T = 125 C No Voltage R eapplied R ated V R eappliedRRM J T 50R IA.. S eries Fig. 10 - On-state Voltage Drop Characteristics 100 1000 T = 2 5 CJ Ins tantaneous On-s tate Current (A) I ns tantaneous On-s tate Voltage (V) T 50R IA.. S eries T = 1 2 5 CJ 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) Tj = 2 5 C Tj = 1 2 5 C Tj = - 4 0 C (1) (2) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) a) R ecommended load line for b) R ecommended load line for R ectangular gate puls e (1) P GM = 10W, tp = 5ms (2) P GM = 20W, tp = 2ms (3) P GM = 50W, tp = 1ms (4) PGM = 100W, tp = 500 s <=30% rated di/ dt : 20V, 65ohms tr=1 s , tp>=6 s T 50R IA.. S eries F requency L imited by P G(AV) rated di/ dt : 20V, 30ohms ; tr=0.5 s , tp>=6 s (3) (4)

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 15 - On-state Power Loss Characteristics Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 DC 120 180 Average On-s tate Curr ent (A) Maximum Allowable Case T emperature ( C) Conduction P eriod T 70R IA.. S eries R (DC) = 0.50 K/ WthJC 0 2 04 06 08 0 1 0 0 1 2 0 Maximum Allowable Ambient T emperature ( C) R = 0.1 K/W - Delta R thSA

7 K /W

Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) T 70R IA.. S eries T = 125 C J 02 0 4 0 6 0 8 0 1 0 0 1 2 0 Maximum Allowable Ambient T emperature ( C) R = 0.1 K/W - Delta R thSA 100 120 140 0 2 04 06 08 0 1 0 0 1 2 0 DC 180 120 RM S Li m i t Conduction P er iod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) T 70R IA.. S eries T = 1 2 5 CJ Fig. 18 - On-state Power Loss Characteristics 100 110 120 130 0 1 02 03 04 05 06 07 08 0 30 60 120 180 Average On-s tate Current (A) Maximum Allowable Cas e T emperature ( C) Conduction Angle T 70R IA.. S eries R (DC) = 0.50 K/ WthJC

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 19 - Gate Characteristics Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current Fig. 10 - On-state Voltage Drop Characteristics 700 800 900 1000 1100 1200 1300 1400 1500 11 0 1 0 0 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P eak Half S ine Wave On-s tate Current (A) T 70R IA.. S eries At Any R ated Load Condition And With R ated V Applied F ollowing S urge. Initial T = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J RRM 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 0.01 0.1 1 P eak H al f S ine Wave On-s tate Current (A) Pu lse Tra in Dura t io n ( s) Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not B e Maintained. Initial T = 125 C No Voltage R eapplied R ated V R eappliedRRM J T 70R IA.. S eries 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 T = 2 5 CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T7 0 RI A . . Se r i e s T = 1 2 5 CJ 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) Tj = 25 C Tj = 1 2 5 C Tj = - 4 0 C (1) (2) In st a n t a n e o u s G a t e C u rre n t ( A ) Ins tantaneous Gate Voltage (V) a) R ec ommended load line for b) R ecommended l oad line for R ectangular gate puls e T 70R IA.., T 90R IA.. S eries F requency Limited by PG(AV) tr=1 s , tp>=6 s rated di/ dt : 20V, 20ohms ; tr=0.5 s , tp>=6 s <=30% rated di/ dt : 15V, 40ohms (1) P GM = 12W, tp = 5ms (2) P GM = 30W, tp = 2ms (3) P GM = 60W, tp = 1ms (4) PGM = 200W, t p = 300 s (3) (4)

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 29 - On-state Power Loss Characteristics Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 DC30 120 180 Average On-s tate Curr ent (A) Maximum Allowable Cas e T emperature ( C) Conduction P eriod T 90R IA.. S eries R (DC) = 0.38 K/ WthJ C 0 2 04 06 08 0 1 0 0 1 2 0 Maximum Allowable Ambient T emperature ( C) R = 0.1 K/W - Delta R thSA 0.3 K/W0.5 K/W 0 1 02 03 04 05 06 07 08 09 0 RM S Li m i t Conduction Angle 180 120 Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) T9 0 RI A Se r i e s T = 1 2 5 C J 0 2 04 06 08 0 1 0 0 1 2 0 Maximum Allowable Ambient T emperature ( C) R 0.1 K/ W - Delta R thSA 0.5 K/W0.7 K/W 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 DC 180 120 RM S Li m i t Conduction P eriod Maximum Aver age On-s tate P ower L os s (W) Average On-s tate Current (A) T 90R IA.. S eries T = 1 2 5 C J Fig. 29 - On-state Power Loss Characteristics 100 110 120 130 0 2 04 06 08 0 1 0 0 30 60 90 120 180 Average On-s tate Current (A) Maxi mum Allowable Cas e T emperatur e ( C) Conduction Angle T 90R IA.. S eries R (DC) = 0.38 K / WthJC

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current Fig. 21 - On-state Voltage Drop Characteristics 700 800 900 1000 1100 1200 1300 1400 1500 1600 11 0 1 0 0 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P eak Half S ine Wave On-s tate Current (A) T 90R IA.. S eries At Any R ated Load Condition And With R ated V Applied F ollowing S urge. Initial T = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s RRM J 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 0.01 0.1 1 P eak Half S i ne Wave On-s tate Current (A) Pu lse Tra in Du ra t io n ( s) Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not B e Maintained. Initial T = 125 C No Voltage R eapplied R ated V R eappliedRRM J T 90R IA.. S eries 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 CJ Ins tantaneous On-s tate Current (A) Ins tantaneous On-s tate Voltage (V) T 90R IA.. S eries T = 1 2 5 CJ 0.01 0.1 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) thJ CT ransient T hermal Impedance Z (K / W) St e a d y St a t e V a l u e R = 0.65 K/ W R = 0.50 K/ W R = 0.38 K/ W (DC Operation) thJ C thJ C thJ C T 50R IA.. S eries T 70R IA.. S eries T 90R IA.. S eries Fig. 34 - Thermal Impedance Z thJC Characteristics

T..RIA Series Bulletin I27105 rev. B 02/02 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.