ZDT6790 ZETEX | Alldatasheet

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SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 PARTMARKING DETAIL – T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 45 -50 V Collector-Emitter Voltage V CEO 45 -40 V Emitter-Base Voltage V EBO 5- 5 V Peak Pulse Current I CM 6- 6 A Continuous Collector Current I C 2- 2 A Operating and Storage Temperature Range T j:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL V ALUE UNIT Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally P tot 2.25 2.75 W W Derate above 25°C* Any single die “on” Both die “on” equally mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT6790 NPN PNP 3 - 381 SM-8 (8 LEAD SOT223)

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 45 V I C=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µ A Collector Cutoff Current I CBO 0.1 µ A VCB=35V Emitter Cutoff Current I EBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V I C=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V I C=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 I C=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* Transition Frequency f T 150 MHz I C=50mA, VCE=5V f=50MHz Input Capacitance C ibo 200 pF V EB=0.5V, f=1MHz Output Capacitance C obo 16 pF V CB=10V, f=1MHz Switching Times t on toff 1300 ns I C=500mA, IB!=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT690 datasheet. PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -40 V I C=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cutoff Current I CBO -0.1 µ A VCB=-30V Emitter Cutoff Current I EBO -0.1 µ A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.75 V V V I C=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V I C=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -0.75 V I C=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 150 800 I C=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Transition Frequency f T 100 MHz I C=-50mA, VCE=-5V f=50MHz Input Capacitance C ibo 225 pF V EB=-0.5V, f=1MHz Output Capacitance C obo 24 pF V CB=-10V, f=1MHz Switching Times t on toff 600 ns I C=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT790 datasheet. ZDT6790 ZDT6790 3 - 382 3 - 383

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 45 V I C=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µ A Collector Cutoff Current I CBO 0.1 µ A VCB=35V Emitter Cutoff Current I EBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V I C=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V I C=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 I C=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* Transition Frequency f T 150 MHz I C=50mA, VCE=5V f=50MHz Input Capacitance C ibo 200 pF V EB=0.5V, f=1MHz Output Capacitance C obo 16 pF V CB=10V, f=1MHz Switching Times t on toff 1300 ns I C=500mA, IB!=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT690 datasheet. PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -40 V I C=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cutoff Current I CBO -0.1 µ A VCB=-30V Emitter Cutoff Current I EBO -0.1 µ A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.75 V V V I C=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V I C=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -0.75 V I C=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 150 800 I C=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Transition Frequency f T 100 MHz I C=-50mA, VCE=-5V f=50MHz Input Capacitance C ibo 225 pF V EB=-0.5V, f=1MHz Output Capacitance C obo 24 pF V CB=-10V, f=1MHz Switching Times t on toff 600 ns I C=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT790 datasheet. ZDT6790 ZDT6790 3 - 382 3 - 383