T620W_04 STMICROELECTRONICS | Alldatasheet
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T630W® March 2004 - Ed: 2 6A SNUBBERLESS™ TRIAC Symbol Parameter Value Unit IT(RMS) RMS on-state current (Full sine wave) Tc= 105°C 6 A ITSM Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) F = 50Hz t = 20ms 80 A F = 60Hz t = 16.7ms 84 I2tI 2t Value for fusing tp = 10 ms 36 A 2s dI/dt Critical rate of rise of on-state current IG =2xI GT,t r ≤ 100ns F = 120 Hz Tj = 125°C 50 A/ µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10ms Tj = 25°C V DRM/VRRM + 100 V IGM Peak gate current tp = 20µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range -4 0t o+1 5 0 -4 0t o+1 2 5 ABSOLUTE RATINGS (limiting values) Symbol Value Unit IT(RMS) 6A VDRM/VRRM 600 and 800 V IGT 20 to 30 mA MAIN FEATURES ISOWATT220AB (Plastic) A1A2 G G Based on ST’ Snubberless technology providing high commutation performances, the T620-600W/800W & T630-600W/800W are specially recommended for use on inductive loads, thanks to their high commuta- tion performances, such as rice cookers. They comply with UL standards (ref. E81734).
DESCRIPTION
Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.4 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant T620 T630 Unit IGT(1) VD=12V R L=30Ω I-II-III MAX. 20 30 mA VGT I-II-III MAX. 1.3 V VGD VD=VDRM RL=3.3kΩ Tj = 125°C I-II-III MIN. 0.2 V IH (2) IT= 100mA MAX. 35 50 mA IL IG = 1.2IGT I - III MAX. 50 70 mA II MAX. 60 80 mA dV/dt (2) VD=67% V DRM Gate open Tj = 125°C MIN. 300 500 V/ µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. 3.3 4.5 A/ms ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value Unit VTM(2) ITM = 8.5 A tp = 380µs Tj = 25°C MAX. 1.4 V VTO(2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd(2) Dynamic resistance Tj = 125°C MAX. 50 m Ω IDRM IRRM VDRM =V RRM Tj = 25°C Tj = 125°C MAX 5 µA mA Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. STATIC CHARACTERISTICS Part Number Voltage Sensitivity Type Package T620-600W 600V 20 mA Snubberless ISOWATT220AB T620-800W 800V 20 mA Snubberless ISOWATT220AB T630-600W 600V 30 mA Snubberless ISOWATT220AB T630-800W 800V 30 mA Snubberless ISOWATT220AB PRODUCT SELECTOR
CURRENT: 6A SENSITIVITY: 20: 20mA 30: 30mA VOLTAGE: 600: 600V 800: 800V PACKAGE: W: ISOWATT220AB
ORDERING INFORMATION
Part Number Marking Weight Base quantity Packing mode T620-600W T620600W 2.3 g 50 Tube T620-800W T620800W 2.3 g 50 Tube T630-600W T630600W 2.3 g 50 Tube T630-800W T630800W 2.3 g 50 Tube OTHER INFORMATION IT(RMS)(A) α=180° P(W) 180° α α Fig. 1: Maximum power dissipation versus RMS on-state current. 0 25 50 75 100 125 Tc(°C) α=180° IT(RMS)(A) Fig. 2: RMS on-state current versus case tem- perature. 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) Zth(j-a) Zth(j-c) K=[Zth/Rth] Fig. 3: Relative variation of thermal impedance versus pulse duration. 100 0123456 VTM(V) Tj=25°C Tj=125°C Tj max. : Vto = 0.85 V Rd = 50 mΩ ITM(A) Fig. 4: On-state characteristics (maximum val - ues).
0.01 0.10 1.00 10.00 tp(ms) Tj initial=25°C dI/dt limitation: 50A/µs ITSM I²t ITSM(A), I t (A s) Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I 2t. 1 10 100 1000 Number of cycles Non repetitive Tj initial=25°C Repetitive Tc=105°C t=20ms ITSM(A) Fig. 5:Surge peak on-state current versus number of cycles. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) IGT IH & IL IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C] Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junc - tion temperature (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 dV/dt (V/µs) (dI/dt)c [(dV/dt)c / Specified (dI/dt)c Fig. 8:Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical val- ues). 0 25 50 75 100 125 Tj(°C) (dI/dt)c [Tj] / (dI/dt)c [Tj=125°C] Fig. 9:Relative variation of critical rate of decrease of main current versus junction temperature.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States PACKAGE MECHANICAL DATA ISOWATT220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 ■ Cooling method : C ■ Recommended torque value : 0.55 m.N. ■ Maximum torque value : 0.70 m.N.