T5L1.2

TB7101F TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• Capable of high current drive (IOUT = maximum of 1 A), using only a few external components.
• Operating voltage (VIN) range: 2.7 to 5.5 V.
• High oscillation frequency of 1 MHz (typ.), making it possible to use small external components.
• Uses internal phase compensation, achieving high efficiency using only an inductor and two capacitors.
• Built-in current mode architecture with excellent fast load response.
• A small surface-mount type ceramic capacitor can be used as an output smoothing capacitor.
• Housed in a small surface-mount package (PS-8) with a low thermal resistance.
• Built-in undervoltage lock out (U.V.L.O), heatprotection, and overcurrent protection. Marking (Note 1)/Pin Assignment Due to its MOS structure, this product is sensitive to electrostatic discharge. Handle with care. SON8-P-0303-0.65A Weight : 0.017 g (typ.) Type Output voltage(V) Type name TB7101F(T5L1.2,F) 1.2 7101A TB7101F(T5L1.5,F) 1.5 7101B TB7101F(T5L1.8,F) 1.8 7101C TB7101F(T5L2.5,F) 2.5 7101D TB7101F(T5L3.3,F) 3.3 7101E Note 1: ● on the lower left of the marking indicates Pin 1. 1 : PGND 2 : V IN 3 : EN 4 : SGND 5 : N.C. 6 : N.C. 7 : V OUT 8 : L X 8765 1234 Type name Lot No. Manufacturing week Code (The first week of the year is 01, continuing up to 52 or 53) Manufacturing year Code (Last digit of the year of manufacture) * The Lot number comprises three numerals. The first numeral represents the last digit of the year of manufacture, and the following two digits indicate the week of manufacture, beginning with 01 and continuing to either 52 or 53.

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 2 How to Order Product No. Package Type and Capacity TB7101F(T5L*.*,F) Emboss Taping (3000pcs / reel ) Block Diagram Pin Descriptions Pin No. Pin Symbol Pin Description 1 PGND Power ground. 2 V IN Input pin. This pin is placed in the standby state if VENB = low. 1 μA or lower operating current. 3 EN Enable pin. This pin is connected to the CMOS inverter. Applying 3.5 V or higher (@ VIN = 5 V) to this pin causes the internal circuit to start switching control. 4 SGND Signal ground. 5 N.C. No connection. 6 N.C. No connection. 8 L X Switching pin. This pin is connected to high-side pch MOS FET and low-side nch MOS FET. PGND DRIVER OSCILLATOR Current Detection VIN DRIVER VOUT SGND - VCOMP Error Amplifier Slope Compensation Control Logic Phase Compensation PWM comparator 0.8V(TYP.) Heat Protection Under voltage lock out Soft Start Reference voltage Lx EN

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 3 Timing Chart Overheat state operation Low Voltage operation OSC IOUT IL VOUT VCOMP T VLX TON OSC VLX Tch VIN OSC VLX The peak switch current is determined according to the VCOMP. Hysteresis: 25°C (typ.) Hysteresis: 0.1 V (typ) Tch increase OSC : Internal oscillato r output voltage IOUT : Load current VOUT: Output voltage VCOMP: Output voltage of error amplifier IL : Inductor current VLX : L X pin voltage VIN : Input pin voltage Tch : Channel temperature

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3～ 6 V Switch pin voltage VLX -0.3～ 6 V Feedback pin voltage VOUT -0.3～ 6 V Enable pin voltage VEN -0.3～ 6 V Input-enable pin voltage VEN-VIN V EN-VIN<0.3 V Power dissipation (Note 1) PD 0.7 W Operating temperature Topr -40 ～85 o C Operating junction temperature Tjopr -40 ～125 ℃ Channel temperature Tch 150 °C Storage temperature Tstg -55 ～150 °C Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a significant change in temperature, etc.) may significantly reduce the reliability of this product even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please consult the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) when designing in order to ensure the appropriate reliability. Thermal Resistance Characteristic Characteristics Symbol Max Unit Thermal resistance, channel and ambient Rth (ch-a) 178.6 (Note 2) °C /W (Note 2) Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm)

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 5 Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V)

• TB7101F(T5L1.2,F) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage V IN(OPR) - - 2.7 - 5.5 V IIN(1) - V IN= 5V, VEN= 5V, VOUT= 5V - 0.68 0.9 mA Operating current IIN(2) - VIN= 2.7V, VEN= 2.7V, VOUT =2.7V - 0.55 0.69 mA Standby current IIN(STBY) - V IN= 5V, VEN= 0V,VOUT= 0V - - 1 μA VIH(EN)(1) - V IN= 5V 3.5 - - V VIH(EN)(2) - V IN= 2.7V 1.89 - - V VIL(EN)(1) - V IN= 5V - - 1.5 V Enable pin threshold voltage VIL(EN)(2) - V IN= 2.7V - - 0.81 V IIH(EN)(1) - V IN= 5V, VEN= 5V 7.6 - 12.4 μA Enable pin input current IIH(EN)(2) - V IN= 2.7V, VEN= 2.7V 4.1 - 6.7 μA VOUT(1) - VIN= 5V, VEN= 5V IOUT=100mA 1.164 1.2 1.236 V Output voltage VOUT(2) - VIN=2.7V, VEN= 2.7V, IOUT=100mA 1.164 1.2 1.236 V Line regulation LINE REG - VIN= VEN= 2.7V～5.5V IOUT=100mA - - 14.5 mV Load regulation LOAD REG - VIN=5V IOUT= 100mA～500mA - - 14.5 mV High-side on-state resistance RDS(ON)(H) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω Low-side on-state resistance RDS(ON)(L) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω High-side leakage current ILEAK(H) - V IN= 5V, VEN= 0V, VLX= 0V - - 1 μA Low-side leakage current ILEAK(L) - V IN= 5V, VEN= 0V, VLX= 5V - - 1 μA fOSC(1) - V IN= 5V, VEN= 5V 0.85 1 1.15 MHz Oscillation frequency fOSC(2) - V IN= 2.7V, VEN= 2.7V 0.85 1 1.15 MHz tss(1) - V IN=5V , VEN=5V, (no load) 1 2 - ms Soft start time tss(2) - V IN= 2.7V, VEN= 2.7V, (no load) 1.4 2.4 - ms Detection VUV - - 2.2 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Protection function (reference data)
• TB7101F(T5L1.2,F) Detection TSD - - - 160 - oC Overheat protection Hysteresis ΔTSD - - 20 - oC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 6 Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V)

• TB7101F(T5L1.5,F) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage V IN(OPR) - - 2.7 - 5.5 V IIN(1) - V IN= 5V, VEN= 5V, VOUT= 5V - 0.68 0.9 mA Operating current IIN(2) - VIN= 2.7V, VEN= 2.7V, VOUT =2.7V - 0.55 0.69 mA Standby current IIN(STBY) - V IN= 5V, VEN= 0V,VOUT= 0V - - 1 μA VIH(EN)(1) - V IN= 5V 3.5 - - V VIH(EN)(2) - V IN= 2.7V 1.89 - - V VIL(EN)(1) - V IN= 5V - - 1.5 V Enable pin threshold voltage VIL(EN)(2) - V IN= 2.7V - - 0.81 V IIH(EN)(1) - V IN= 5V, VEN= 5V 7.6 - 12.4 μA Enable pin input current IIH(EN)(2) - V IN= 2.7V, VEN= 2.7V 4.1 - 6.7 μA VOUT(1) - VIN= 5V, VEN= 5V IOUT=100mA 1.455 1.5 1.545 V Output voltage VOUT(2) - VIN=2.7V, VEN= 2.7V, IOUT=100mA 1.455 1.5 1.545 V Line regulation LINE REG - VIN= VEN= 2.7V～5.5V IOUT=100mA - - 18 mV Load regulation LOAD REG - VIN=5V IOUT= 100mA～500mA - - 18 mV High-side on-state resistance RDS(ON)(H) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω Low-side on-state resistance RDS(ON)(L) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω High-side leakage current ILEAK(H) - V IN= 5V, VEN= 0V, VLX= 0V - - 1 μA Low-side leakage current ILEAK(L) - V IN= 5V, VEN= 0V, VLX= 5V - - 1 μA fOSC(1) - V IN= 5V, VEN= 5V 0.85 1 1.15 MHz Oscillation frequency fOSC(2) - V IN= 2.7V, VEN= 2.7V 0.85 1 1.15 MHz tss(1) - V IN=5V , VEN=5V, (no load) 1 2 - ms Soft start time tss(2) - V IN= 2.7V, VEN= 2.7V, (no load) 1.4 2.4 - ms Detection VUV - - 2.2 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Protection function (reference data)
• TB7101F(T5L1.5,F) Detection TSD - - - 160 - oC Overheat protection Hysteresis ΔTSD - - 20 - oC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 7 Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.8 to 5.5 V)

• TB7101F(T5L1.8,F) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage V IN(OPR) - - 2.8 - 5.5 V IIN(1) - V IN= 5V, VEN= 5V, VOUT= 5V - 0.68 0.9 mA Operating current IIN(2) - VIN= 2.8V, VEN= 2.8V, VOUT =2.8V - 0.55 0.69 mA Standby current IIN(STBY) - V IN= 5V, VEN= 0V,VOUT= 0V - - 1 μA VIH(EN)(1) - V IN= 5V 3.5 - - V VIH(EN)(2) - V IN= 2.8V 1.89 - - V VIL(EN)(1) - V IN= 5V - - 1.5 V Enable pin threshold voltage VIL(EN)(2) - V IN= 2.8V - - 0.81 V IIH(EN)(1) - V IN= 5V, VEN= 5V 7.6 - 12.4 μA Enable pin input current IIH(EN)(2) - V IN= 2.8V, VEN= 2.8V 4.26 - 6.94 μA VOUT(1) - VIN= 5V, VEN= 5V IOUT=100mA 1.746 1.8 1.854 V Output voltage VOUT(2) - VIN=2.8V, VEN= 2.8V, IOUT=100mA 1.746 1.8 1.854 V Line regulation LINE REG - VIN= VEN= 2.8V～5.5V IOUT=100mA - - 14.5 mV Load regulation LOAD REG - VIN=5V IOUT= 100mA～500mA - - 14.5 mV High-side on-state resistance RDS(ON)(H) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω Low-side on-state resistance RDS(ON)(L) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω High-side leakage current ILEAK(H) - V IN= 5V, VEN= 0V, VLX= 0V - - 1 μA Low-side leakage current ILEAK(L) - V IN= 5V, VEN= 0V, VLX= 5V - - 1 μA fOSC(1) - V IN= 5V, VEN= 5V 0.85 1 1.15 MHz Oscillation frequency fOSC(2) - V IN= 2.8V, VEN= 2.8V 0.85 1 1.15 MHz tss(1) - V IN=5V , VEN=5V, (no load) 1 2 - ms Soft start time tss(2) - V IN= 2.8V, VEN= 2.8V, (no load) 1.4 2.4 - ms Detection VUV - - 2.2 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Protection function (reference data)
• TB7101F(T5L1.8,F) Detection TSD - - - 160 - oC Overheat protection Hysteresis ΔTSD - - 20 - oC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 8 Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 3.5 to 5.5 V)

• TB7101F(T5L2.5,F) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage V IN(OPR) - - 3.5 - 5.5 V IIN(1) - V IN= 5V, VEN= 5V, VOUT= 5V - 0.68 0.9 mA Operating current IIN(2) - VIN= 3.5V, VEN= 3.5V, VOUT =3.5V - 0.55 0.705 mA Standby current IIN(STBY) - V IN= 5V, VEN= 0V,VOUT= 0V - - 1 μA VIH(EN)(1) - V IN= 5V 3.5 - - V VIH(EN)(2) - V IN= 3.5V 2.45 - - V VIL(EN)(1) - V IN= 5V - - 1.5 V Enable pin threshold voltage VIL(EN)(2) - V IN= 3.5V - - 1.05 V IIH(EN)(1) - V IN= 5V, VEN= 5V 7.6 - 12.4 μA Enable pin input current IIH(EN)(2) - V IN= 2.7V, VEN= 2.7V 5.32 - 8.68 μA VOUT(1) - VIN= 5V, VEN= 5V IOUT=100mA 2.425 2.5 2.575 V Output voltage VOUT(2) - VIN=3.5V, VEN= 3.5V, IOUT=100mA 2.425 2.5 2.575 V Line regulation LINE REG - VIN= VEN= 3.5V～5.5V IOUT=100mA - - 30 mV Load regulation LOAD REG - VIN=5V IOUT= 100mA～500mA - - 30 mV High-side on-state resistance RDS(ON)(H) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω Low-side on-state resistance RDS(ON)(L) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω High-side leakage current ILEAK(H) - V IN= 5V, VEN= 0V, VLX= 0V - - 1 μA Low-side leakage current ILEAK(L) - V IN= 5V, VEN= 0V, VLX= 5V - - 1 μA fOSC(1) - V IN= 5V, VEN= 5V 0.85 1 1.15 MHz Oscillation frequency fOSC(2) - V IN= 3.5V, VEN= 3.5V 0.85 1 1.15 MHz tss(1) - V IN=5V , VEN=5V, (no load) 1 2 - ms Soft start time tss(2) - V IN=3.5V , VEN=3.5V, (no load) 1.3 2.4 - ms Detection VUV - - 2.2 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Protection function (reference data)
• TB7101F(T5L2.5F) Detection TSD - - - 160 - oC Overheat protection Hysteresis ΔTSD - - 20 - oC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 9 Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 4.3 to 5.5 V)

• TB7101F(T5L3.3,F) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage V IN(OPR) - - 4.3 - 5.5 V IIN(1) - V IN= 5V, VEN= 5V, VOUT= 5V - 0.68 0.9 mA Operating current IIN(2) - VIN= 4.3V, VEN= 4.3V, VOUT =4.3V - - 0.775 mA Standby current IIN(STBY) - V IN= 5V, VEN= 0V,VOUT= 0V - - 1 μA VIH(EN)(1) - V IN= 5V 3.5 - - V VIH(EN)(2) - V IN= 4.3V 3.01 - - V VIL(EN)(1) - V IN= 5V - - 1.5 V Enable pin threshold voltage VIL(EN)(2) - V IN=4.3V - - 1.29 V IIH(EN)(1) - V IN= 5V, VEN= 5V 7.6 - 12.4 μA Enable pin input current IIH(EN)(2) - V IN= 2.7V, VEN= 2.7V 6.54 - 10.66 μA VOUT(1) - VIN= 5V, VEN= 5V IOUT=100mA 1.164 1.2 1.236 V Output voltage VOUT(2) - VIN=4.3V, VEN= 4.3V, IOUT=100mA 1.164 1.2 1.236 V Line regulation LINE REG - VIN= VEN= 4.3V～5.5V IOUT=100mA - - 40 mV Load regulation LOAD REG - VIN=5V IOUT= 100mA～500mA - - 40 mV High-side on-state resistance RDS(ON)(H) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω Low-side on-state resistance RDS(ON)(L) - V IN= 5V, VEN= 5V, ILX= 0.5A - 0.27 - Ω High-side leakage current ILEAK(H) - V IN= 5V, VEN= 0V, VLX= 0V - - 1 μA Low-side leakage current ILEAK(L) - V IN= 5V, VEN= 0V, VLX= 5V - - 1 μA fOSC(1) - V IN= 5V, VEN= 5V 0.85 1 1.15 MHz Oscillation frequency fOSC(2) - V IN= 4.3V, VEN= 4.3V 0.85 1 1.15 MHz tss(1) - V IN=5V , VEN=5V, (no load) 1 2 - ms Soft start time tss(2) - V IN=4.3V , VEN=4.3V, (no load) 1.2 2.4 - ms Detection VUV - - 2.2 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Protection function (reference data)
• TB7101F(T5L3.3,F) Detection TSD - - - 160 - oC Overheat protection Hysteresis ΔTSD - - 20 - oC

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 10 Electrical Characteristics Common to All Products When a pulse test is carried out, Tj = 25°C is the standard condition in the measurements for each item. Any drift in the electrical characteristic due to a rise in the junction temperature of the chip may be disregarded. Application Circuit Example Figure 1: TB7101F application circuit example Component constants The following values are given only for your reference and may need tuning depending on your input/output conditions and board layout. CIN: Input smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG, manufactured by Taiyo Yuden Co., Ltd.) COUT: Output smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG manufactured by Taiyo Yuden Co., Ltd.) L: Inductor3.3 μH (@ VIN = 5 V, VOUT = 3.3 V); CDRH4D28C/LD series, manufactured by Sumida Corporation How to use Setting the Inductance The required inductance can be calculated by using the following equation: IN OUT LOSC OUTIN V V I f V VL ⋅Δ ⋅ −= … (1) V IN: Input voltage (V) f OSC: Oscillation frequency (Hz) V OUT: Output voltage (V) ΔIL: Inductor ripple current (A) * Generally, ΔIL should be set to 30% to 40% of the maximum output current. For the TB7101F, set ΔIL to 0.3 A, as its maximum current [ILX(MAX)] is 1 A (min). Therefore select an inductor whose current rating is no lower than the peak switch current [1.15 A (min)] of the TB7101F. If the current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. If VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as below. Be sure to select an inductor with an optimum constant by taking VIN variations into consideration. TB7101F(T5L*.*,F) VOUT PGNDSGND EN VIN COUT VOUT GND L CIN GND LX VIN

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 11 H V V mAMHz V V V V I f V VL IN OUT LOSC OUTIN μ7 . 3 3 . 3 300 1 3 . 3 5 ⋅Δ ⋅ Figure 2: Inductor current waveform Output capacitor The capacitance of the output ceramic capacitor is greatly affected by temperature. Select a product whose temperature characteristics (such as B-characteristic) are excellent. The capacitance value should be to more than 10μF, and set to an optimum value by, for example, enlarging the output capacitor when there is instability under use conditions ,or when there is a large ripple voltage or drop in output voltage under heavy loads. Ceramic capacitors can be used to achieve low output ripple, though it is more difficult to achieve phase compensation with ceramic capacitors because the equivalent series resistance (ESR) of ceramic capacitors is lower. For this reason, perform a careful evaluation when using ceramic capacitors. Precautions

• Please select parts after confirming the actual operation in the customer set and considering the input voltage the output voltage, the output current, the temperature, the characteristics or the kind of capacitor, and the inductor.
• If the voltage between the input and output is low, the in fluence of the on-state voltage of the switch power MOSFET is greater, causing the voltage across the inductor to decrease. For this reason, it may become impossible for the required inductor current to flow, resulting in lower performance or unstable operation of the DC-DC converter. As a rough standard, keep the input-output voltage potential difference at or above 1 V, taking the on-state voltage of the power MOSFET into consideration.
• The lowest output voltage that can be set is 0.8 V (typ.).
• There is an antistatic diode between the ENB and V IN pins. The voltage between the ENB and VIN pins should satisfy the rating VENB - VIN < 0.3 V
• If operation becomes unstable due to switching noise un der a heavy load, please mount a by-pass capacitor Ccc between the SGND pin and the VIN pin. OSCf 1T = IN OUT ON V VT T⋅ = ΔIL IL

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 12 Characteristic data VOUT – IOUT VIN=5.0 V TB7101F(T5L2.5,F) Ta = 25°C 2.5 2.575 2.425 2.550 2.525 2.475 2.450 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=5.0 V VOUT – IOUT TB7101F(T5L3.3,F) Ta = 25°C 3.3 3.399 3.201 3.366 3.333 3.267 3.234 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=3.3 V VOUT – IOUT TB7101F(T5L1.8,F) Ta = 25°C 1.8 1.854 1.746 1.836 1.818 1.782 1.764 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=5.0 V VOUT – IOUT TB7101F(T5L1.8,F) Ta = 25°C 1.8 1.854 1.746 1.836 1.818 1.782 1.764 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=5.0 V VOUT – IOUT TB7101F(T5L1.5,F) Ta = 25°C 1.5 1.545 1.455 1.53 1.515 1.485 1.47 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=3.3 V VOUT – IOUT TB7101F(T5L1.5,F) Ta = 25°C 1.5 1.545 1.455 1.53 1.515 1.485 1.47 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A)

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 13 Input Voltage V IN (V) VOUT – VIN 2 4 6 3.3 3.399 3.201 IOUT = 0.2A TB7101F(T5L3.3,F) Ta = 25°C 3.366 3.333 3.267 3.234 3 5 Output Voltage V OUT (V) VOUT – VIN 2 4 6 2.5 2.575 2.425 IOUT = 0.2A TB7101F(T5L2.5,F) Ta = 25°C 2.55 2.525 2.475 2.45 3 5 Input Voltage V IN (V) Output Voltage V OUT (V) VOUT – VIN 2 4 6 1.8 1.854 1.746 IOUT = 0.2A TB7101F(T5L1.8,F) Ta = 25°C 1.836 1.818 1.782 1.764 3 5 Input Voltage V IN (V) Output Voltage V OUT (V) VOUT – VIN 2 4 6 1.5 1.545 1.455 IOUT = 0.2A TB7101F(T5L1.5,F) Ta = 25°C 1.53 1.515 1.485 1.47 3 5 Input Voltage V IN (V) Output Voltage V OUT (V) VIN=5.0 V VOUT – IOUT TB7101F(T5L1.2,F) Ta = 25°C 1.2 1.236 1.164 1.224 1.212 1.188 1.176 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A) VIN=3.3V VOUT – IOUT TB7101F(T5L1.2,F) Ta = 25°C 1.2 1.236 1.164 1.224 1.212 1.188 1.176 0.01 0.1 1 0.001 Output Voltage V OUT (V) Load Current I OUT (A)

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 14 VOUT – VIN 2 4 6 1.2 1.236 1.164 IOUT = 0.2A TB7101F(T5L1.2,F) Ta = 25°C 1.224 1.212 1.188 1.176 3 5 Input Voltage V IN (V) Output Voltage V OUT (V) η – I OUT TB7101F(T5L3.3,F) Ta = 25°C VIN = 5.0V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L2.5,F) Ta = 25°C VIN = 5.0V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L1.8,F) Ta = 25°C VIN = 5.0V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L1.8,F) Ta = 25°C VIN = 3.3V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % )

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 15 η – I OUT TB7101F(T5L1.5,F) Ta = 25°C VIN =3.3V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L1.5,F) Ta = 25°C VIN =5.0V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L1.2,F) Ta = 25°C VIN =3.3V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % ) η – I OUT TB7101F(T5L1.2,F) Ta = 25°C VIN =5.0V 100 0 0.2 1 0.4 0.6 0.8 Load Current I OUT (A) Efficiency η ( % )

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 16 Package dimensions SON8-P-0303-0.65A Unit: mm Weight: 0.017 g (Typ.) 0.33 ± 0.05 0.475 0.65 0.1 max 2.9 ± 0.1 A 2.4 ± 0.1 2.8 ± 0.1 B 0.8 ± 0.05 S 0.17 ± 0.02 0.025 S 0.28 +0.1 - 0.110.28 +0.1 - 0.11 1.12 +0.13 - 0.121.12 +0.13 - 0.12 0.05 BM 0.05 AM

TB7101F(T5L1.2,F) , TB7101F(T5L1.5,F) TB7101F(T5L1.8,F) , TB7101F(T5L2.5,F) TB7101F(T5L3.3,F) 2007-09-06 17 RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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