T2512MH STMICROELECTRONICS | Alldatasheet
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IST] 7) SGS-THOMSON e MICROELECTRONICS T25xxxH STANDARD TRIACS
FEATURES
= IRs) =25A = Vor = 400V to 800V = High surge current capability ne ne G
DESCRIPTION
The T25xxxH series of triacs uses a high T0220 performance MESA GLASS technology. These non-insulated parts are intended for general purpose switching (Plastic) and phase control applications. ABSOLUTE RATINGS (limiting values) [Symi [Parmeter | at Un Iams) | RMS on-state current Te= 80°C (360° conduction angle) Itsm Non repetitive surge peak on-state current |tp-e3ms| 262 (J; initial = 25°C ) [e=tome| ao di/dt Critical rate of rise of on-state current Repetitive 10 Alus le=500mA dig /dt = 1 Aus. F =50Hz Non Repetitive Tsig Storage and operating junction temperature range - 40, +150 °C Tj - 40, +125 TI Maximum lead temperature for soldering during 10s at °C 4.5mm from case Voltage el ee niece ced Vorm Repetitive peak off-state voltage 700 | 800 Vv VaRM Tj =125°C January 1995, _ 15 Mm 7929237 OO746S7 ITI
THERMAL RESISTANCES: [smo [Pemeer mo | [nc [nainwanoan a_i Junction to case for A.C 360° conduction angle (F=50Hz) | 15 [ow GATE CHARACTERISTICS (maximum values) Po ay=1W Pem=10W(tp=20 us) Iam =4A (tp =20 ps)
ELECTRICAL CHARACTERISTICS
— 2 | 3 | Fw [wwe [so [75 | [eo [vervow Axaam [tease] Hew [wn ea v | tot Vo=Vorm ke=500mA | Tj=25°C | Fll-lll-lV | TYP us ty =35A dig/dt = 3A/us [a | reesoma cavemen [Trae | [war] so [7 | ma | | = 1.2 har Tease | tiv [typ] so | 75 | ma Fu [re | 00 | 80 | ins [owas woes [tase | mee] ts | IRRM Va = VanM - Fesocl [wx] sma | dV/dt* | VD=67%Vprm Tj= 110°C Vius Gate open * For either polarity of electrode Ae voltage with reference to electrode A;
ORDERING INFORMATION
TRIAC MESA GLASS al PACKAGE : H =T0220 Non-insulated CURRENT + SENSITIVITY ‘+ VOLTAGE 215 . @s 7929237 OO74b58 835
Fig.1 : Maximum RMS power dissipation versus Fig.2 : Correlation between maximum RMS power AMS on-state caren (Tab and toaso for cfront thermal resistances (rats conteck Pw) Pw) Tease (0) 35 ° 35 ~ 0° oe tee EG seme NNR b 90 20 | c a 20 S N L\\4 s Loe STH oT NA Xoo 0 ye ew FF TR he WF ltt 6 | dt ct Nw 0 25 5 7.5 10 125 15 17.5 20 22.5 25 0 20 40 60 80 100 120 140 Fig.3 : RMSon-state current versus case tempera- Fig.4 : Relative variation of thermal impedance ture. versus pulse duration. 1 (A) ZtvRIn (TILILLO || ESS eee 25 es a A \\ CS ae Tes: PCH EC atitt Ett TT N | eh ott dee TT TT TNS ow eT TTI TTT © 10 20 30 40 50 60 70 80 90 100110120130 163 16-2 164 «= E001 E+ 1E+2 SEs2 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. ttt mT Irs) Igt{T}-25°C] ih[Tj=25 °C} 250 pit ee | | ary | | | Jf Tt TT 200} - eNO UE Net | | 42} “SRT 100 iaal a || ee | oss | | IST TT 50 Ce Fie Lmmeecteree | HM LTT oe i 04D -20 0 20 40 60 80 100 120 140 % 10 100 1000 MB 7929237 OO74bS95 77)
Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width :t< 10ms, and cor- responding value of Ft. Lyf): Ft (At9) 'ylA) SL a — a SS SSS [se [| | << ar rs Sd ; = ae a rr =a a ee = a a / A a ) | | tT la ae _——— Rt =0.01359 | Le i ‘oa ee | 1 10 0 05 1145 2 25 3 35 4 45 4/5 5 OF SS @ 7929237 OO74bL0 493
T0220 Non-insulated (Plastic) DIMENSIONS o Miltimeters [inches | A 4 pal | ros] | fo.406| @ J [eB] [es] 6s lo2asjo256| | jo] | fer | fosss| ' B po] fre7] [ [o.s00] | c pei [aay | lores) [a] | [ao] | fore| ° bof a TT f4s[ 47] [0.17/0.185) P D [i | [ss3[se6] [o.139/0.144| [uy [fre ]1s | [o.047/0.051] HEN m [ete] | fost | [ooss| N [mfea7] | foro) | | [Ni fess] | forool || Let jf [asf [ fooss: Marking : type number Weight: 1.89 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is ganted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics produets are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Alll rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. [7 85S-THomson 5/5 @@ 7929237 OO74bb1 30T