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JJ JIEJIE MICROELECTRONICS CO.,Ltd BTA04/BTB04 Series/T4 Series 4A TRIACs DESCRIPTION: iPAK DPAK High current density due to double mesa 2 technology;Glass Passivation. BTA04/BTB04 series triacs is suitable for general purpose AC switching. They can be used 1 as an ON/OFF Function in applications such as 1 3 static relays, heating regulation, induction 2 motor stating circuits... or for phase contol 3 operation light dimmers, motorspeed controllers. T4X X Series are 3 Quadrants triacs, They are specially recommended for use on inductive loads. The T0-220AB ins Family are 2500V RMS <p insulating voltage. T11) MAIN FEATURES TO-220AB &{3) [ews ABSOLUTE MAXIMUM RATINGS Storage junction temperature range -40 to +150 Operrating junction temperature range -40 to +125 Repetitive Peak Off-state Voltage Tj=25°C 600ana800| Repetitive Peak Reverse Voltage Tj=25°C 600and800 Non repetitive Surge Peak Off-state Voltage 700and900 tp=10ms,Tj=25°C Vv Non repetitive Peak Reverse Voltage 700and900 = iPAK/DPAK/TO-220AB Tc=105°C as on: ‘state current ITIRMS) 4 A (full sine wave) TO-220AB ins Tc=100'C Non repetitive surge peak on-state current f=60Hz t=16.7ms Irs A (full cycle, T}=25°C) f=50Hz t=20ms It Value for fusing tp=10ms [or [6 [as | Critical rate of rise of on-state current IG=2xI6T, trs100 ns, f=120Hz, Tj=125°C dl fat Peak gate current tp=20us,Tj=125°C Average gate power dissipation Tj=125°C TEL: +86-513-83639777 -1/6- http: //WWW.JIEJIE-CN.COM
BTA04/BTB04 Series/T4 Series JJ JieJie Microelectronics CO.,Ltd ELECTRICAL CHARACTERISTICS(Tj=25°C unless otherwise specified) @ BTA04/JBTB04 Series / Qua BTA04/BTB04 ; Symbol Test Condition drant lo | Unit IU 5 | 5 | 10 | 10 Vp=12V RL=330 WOsVOrn RSSSKO T1256 pacfwm | oz |v | IL IG=1.216T Fw [max | 20 | 20 | a0 | ao | ma | dV/dt VD=67%VDRM gate open Tj=125°C | min. | 10 | 10 [ 10 | 10 | Vis | @ 14 Series Symbol Test Condition Quadrant Unit 1405 | T410 | 7435 ew fom Pe [|] Vo=12V RL=33Q Sew oe [| WOsVORM RIES SKO TI =125% Frum fw) oe |v | Toa foe [To [a IL Io=1.2IeT a Yo 5 [a [ dVidt VD=67%VORM gate open Tj=125°C | min. | 20 | 40 | 400 | Wis | (dV/dt)c=0.1V/ps Ti=125°C | 18 | 27 | — | (di/dt)e | (dV/dtyc=10V/ps T)=125°C | 09 | 20 | — | ams Without snubber Tj=125°C | — | - [25 | TEL: 0513-83639777 -2/6- http: //WWW.JIEJIE-CN.COM
BTAO4/BTB04 Series/T4 Series JJ JieJie Microelectronics Co.,Ltd STATIC CHARACTERISTICS Symbol vatue(MAX) IDRM Z Z IRRM VD=VDRM VR=VRRM Tj=125°C 1 mA THERMAL RESISTANCES iAPK/DPAK/TO-220AB Rth( J -C) Junction to Case(AC) “CcIW
ORDERING INFORMATION
A:TO-220AB ins It Class 0.252 B:TO-220AB 600:VDRM/VRRM> 600V 800:VDRM/VRRM>800V ITiRMs): 4A T 4 05-600 B H:TO-251 _B:TO-252 Ireews): 4A 600:VDRM/VRRM2600V Ict Class 800:VDRM/VRRM2800V 05:5mA 10:10mA 35:35mA TEL: 0513-83639777 -3/6- http: //WWW.JIEJIE-CN.COM
BTA04/BTB04 Series/T4 Series JJ JieJie Microelectronics CO.,Ltd PACKAGE MECHANICAL DATA iPAK aca Lut [is] [19 foo7i] [0.075 | [vit tet [ tat] DPAK — sn |. [os a at [a [2a [2a [owes] [0.005] | 1, etfoss poss not. — [one] O. J | [exes [TJ sa Joao] —fozr2| if | | \\ | [ex foas| [ose Jota] [0.4] aa 2. betel fee jozse| —[ozea| a OAS Le [e«| [er fo2sa|fozea| ae [oe |aao| [4700-173] [o.105] a lar] fost | [oon] _| ia Lvit fat fT fat | Lvzato] [elfol [e | TEL: 0513-83639777 -4/6- http: //WWW.JIEJIE-CN.COM
BTAO4/BTBO4 Series/T4 Series Jd JieJie Microelectronics CO.,Ltd PACKAGE MECHANICAL DATA TO-220AB Cae | re Ref, ae in [9 ox [wn] To. [a ae Ca faa] [40 forral [ese | tr [8 Jas [os onze] —[ooe SH i [Ce Joasl —[o7o|ooie) —[ooer| ce io [ea [r2a] [122 onus] —[oosi Bs ca eee] [27 lose! —[o.aea LI = Ce fea] [66 fozed] [oe : Ce [aa] [4 fore] [oar Ci fee Java) 20] rr] ney el | fore] he a be fa) [a7 fooa) [oa bs [i J20s] [ass |o.04] Jo. Det Tet 1 et —_] TEL: 0513-83639777 -5/6- http//: WWW. JIEJIE-CN. COM
BTA04/BTB04 Series/T4 Series JJ JieJie Microelectronics CO.,Ltd FIG.1: Maximum power dissipation versus FIG.2: RMS on-state current versus case RMS on-state current(full cycle) temperature (full cycle) P(W) IT(RMS)(A) i a A Sa es | a a a Os ce a ee ee ee ee ee Sy ——— EN A SS a A ek a A es a 7, a a +++} + t—— A (- iriesyay [|| ee telt) Fh a | FIG.3: On-state characteristics (maximum FIG.4:Surge peak on-state current versus values) number of cycles IA) ITSM(A) ‘=== ===========_=_=__—— of ] TIM tT Titi TT CTT) oe Se reser SEE * ee ane TTT PerecceeeeeEe EE, - EE e ISL intial = er «CE Sn) Se y o=105°C nel Pea | Ee Ch LTT Ae | Mrmvyy ° TT bo aces eH
1 PUA LETT EEE TT) of —T TTT TT TTT TTT)
FIG.5: Non-repetitive surge peak on-state FIG.6: Relative variations of gate trigger current for a sinusoidal pulse with width current, holding current and latching current tp < 10ms. versus junction temperature(typical values) Irsm(A), Pt(As) IGT, IH, IL[T)VIGT, IH, IL[T}=25 °C] | | Ketter ett | OE ES AS pare titaon rt Pt KARE EEE EEE EEE LA some ET wT CE rele TTT HER SSE CCE EEE , ey ell of Tee Ps Tt TY SSS cee OSS a ee ot | tT TTT TT ee TT ry TY LC) COE mitey CSET LETT TEPTTT a TEL: 0513-83639777 -6/6- http//: WWW. JIEJIE-CN. COM