START405 STMICROELECTRONICS | Alldatasheet

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Technical content

1/7July, 3 2002 START405 NPN Silicon RF Transistor SOT343 (SC70) ORDER CODE START405TR BRANDING 405

APPLICATIONS

  • LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA
  • GENERAL PURPOSE 500MHz-5GHz
  • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V
  • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V
  • TRANSITION FREQUENCY 42GHz
  • LOW CURRENT CONSUMPTION
  • ULTRA MINIATURE SOT343 PACKAGE

DESCRIPTION

The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance level only archived with GaAs products before. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vceo Collector emitter voltage 4.5 V Vcbo Collector base voltage 15 V Vebo Emitter base voltage 1.5 V Ic Collector current 10 mA Ib Base current 1 mA Ptot Total dissipation, Ts = TBD 45 mW Tstg Storage temperature -65 to 150 oC Tj Max. operating junction temperature 150 oC Rthjs Thermal Resistance Junction soldering point 270 oC/W ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Note(1): Gms = | S21 / S12 | Symbol Parameter Test Conditions Min. Typ. Max. Unit Icbo Collector cutoff current Vcb =5V, Ie = 0A 150 nA Iebo Emitter-base cutoff current Veb = 1.5V, Ic = 0A 15 µA Hfe DC current gain Ic = 5mA, Vce = 4V 160 NFmin Minimim noise figure Ic = 2mA, Vce = 2V, f = 1.8GHz 1.1 dB Ga NFmin associated gain Ic = 2mA, Vce = 2V, f = 1.8GHz 19 dB |S21|2 Insertion power gain Ic = 5mA, Vce = 2V, f = 1.8GHz 17.4 dB Gms (1) Maximum stable gain Ic = 5mA, Vce = 2V, f = 1.8GHz 24.2 dB P-1dB 1dB compression point Ic = 5mA,Vce = 2V, f = 1.8GHz 5 dBm OIP3 Ouput third order intercept point Ic = 5mA,Vce = 2V, f = 1.8GHz 15 dBm PINOUT PIN CONNECTION Pin No. Description 1B A S E

3 COLLECTOR

2,4 EMITTER SOT343 Top view

Symbol Value Symbol Value Symbol Value TMEAS 27.0 FC 0.5 XJBC 0.3 IS 1.9E-17 EG 1.12 XTI 3.57 ISE 1.58E-13 NF 1 BF 340 NR 1 NE 2.711 VAF 79 ISC 7.40E-17 BR 8.59 VAR 2.35 TR 7E-10 PTF 38 VTF 14.7 XTF 42 ITF 0.42 MJE 0.414 RB 34.07 RBM 6.1 MJC 0.266 RC 7.9 RE 1.25 MJS 0.22 CJE 111E-15 VJE 1.1 IKR 2.29E-3 CJC 53E-15 VJC 0.69 XTB -0.744 CJS 33E-15 VJS 0.4 SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) PACKAGE EQUIVALENT CIRCUIT TRANSISTOR CHIP DATA FOR MORE ACCURACY SIMULATION IN SATURATION REGION : Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version 2001 only). Table A (Spice Parameters extracted in saturation region) RW Vjj ENP VRP RP In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343 package are combined in one electrical connection. CTransistor Chip B’ C’ L=0.3 nH L=0.6 nH L3 L5 L6 C=5 fF L=0.35 nH L1 L=0.3 nH L=0.15 nHL2 C=300 fFC=430 fF C1 C3 E L=0.6 nH B .. CTransistor Chip B’ C’ L=0.3 nH L=0.6 nH L3 L5 L6 C=5 fF L=0.35 nH L1 L=0.3 nH L=0.15 nHL2 C=300 fFC=430 fF C1 C3 E L=0.6 nH B ..

COMMON EMITTER S-PARAMETERS ( VCE = 2V, IC = 5mA ) FREQ IS11II S 21II S 12IS 12∠Φ IS22IS 22∠Φ (MHz) 1 0.809 -41 9.42 175 0.022 99 0.906 -20 2 0.642 -61 6.99 178 0.028 122 0.820 -28 3 0.523 -64 5.12 164 0.030 175 0.815 -31 4 0.372 -78 3.48 146 0.065 94 0.644 -41 S11∠Φ S21∠Φ

TAPE & REEL DIMENSIONS mm MIN. TYP . MAX A 178.5 179 179.5 C 12.8 13.0 13.5 D 20.2 N 54.5 55 55.5 T 14.4 Ao 2.25 Bo 2.7 Ko 1.2 Po 3.8 (cumulative 10 Po) 4.0 4.2 (cumulative 10 Po) P 4.0 DEVICE ORIENTATION TOP VIEW END VIEW 405 405 405 405

PACKAGE DIMENSIONS SOT343 (SC-70 4 leads) 2.00-2.20 1.90-2.10 1.15-1.35 1.15 0.55-0.65 1.30 0.80-1.00 1.15-1.35 0.10-0.20 0.45

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