T405-800T

T4 STMICROELECTRONICS | Alldatasheet

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SNUBBERLESS ™ & LOGIC LEVEL 4A TRIACS June 2003 - Ed: 5 MAIN FEATURES:

DESCRIPTION

Based on ST’s Snubberless / Logic level technolo- gy providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the E81734). Symbol Value Unit IT(RMS) 4A VDRM /VRRM 600 to 800 V IGTT (Q1) 5 to 35 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) DPAK / IPAK TO-220AB Tc = 110°C A ISOWATT 220AB Tc = 105°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 30 A F = 60 Hz t = 16.7 ms 31 I²tI ²t Value for fusing tp = 10 ms 5.1 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G G DPAK (T4-B) A2 G ISOWATT 220AB (T4-W) A2A1 G G TO-220AB (T4-T) IP AK (T4-H)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES S = Copper surface under tab Symbol Test Conditions Quadrant T4 Unit T405 T410 T435 IGT (1) VD = 12 V RL = 30 Ω I - II - III MAX. 5 10 35 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 33 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA MAX. 10 15 35 mA IL IG = 1.2 IGT I - III MAX. 10 25 50 mA II 15 30 60 dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms (dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 - Without snubber Tj = 125°C - - 2.5 Symbol Test Conditions Value Unit VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.9 V R d (2) Dynamic resistance Tj = 125°C MAX. 120 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA Symbol Parameter Value Unit R th(j-c) Junction to case (AC) DPAK IPAK TO-220AB 2.6 °C/W ISOWATT220AB 4.0 R th(j-a) Junction to ambient S = 0.5 cm² DPAK 70 °C/W TO-220AB ISOWATT220AB 60 IPAK 100 T

ORDERING INFORMATION

Note: xx = sensitivity, yyy = voltage Part Number Voltage (xxx) Sensitivity Type Package

600 V 700 V 800 V

T405-xxxB X X X 5 mA Logic level DPAK T405-xxxH X X X 5 mA Logic level IPAK T405-xxxT X X X 5 mA Logic level TO-220AB T405-xxxW X X X 5 mA Logic level ISOWATT220AB T410-xxxB X X X 10 mA Logic level DPAK T410-xxxH X X X 10 mA Logic level IPAK T410-xxxT X X X 10 mA Logic level TO-220AB T410-xxxW X X X 10 mA Logic level ISOWATT220AB T435-xxxB X X X 35 mA Snubberless DPAK T435-xxxH X X X 35 mA Snubberless IPAK T435-xxxT X X X 35 mA Snubberless TO-220AB T435-xxxW X X X 35 mA Snubberless ISOWATT220AB Part Number Marking Weight Base quantity Packing mode T4xx-yyyB T4xxyyyB 0.3 g 75 Tube T4xx-yyyB-TR T4xxyyyB 0.3 g 2500 Tape & reel T4xx-yyyH T4xxyyy 0.4 g 75 Tube T4xx-yyyT T4xxyyyT 2.3 g 50 Tube T4xx-yyyW T4xxyyyW 2.1 g 50 Tube T 4 05 - 600 B (-TR) TRIAC SERIES SENSITIVITY: 05: 05mA 10: 10mA 35: 35mA VOLTAGE: 600: 600V 700: 700V 800: 800V CURRENT: 4A PACKAGE: B: DPAK H: IPAK T: TO-220AB W: ISOWATT220AB PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current case versus tem- perature (full cycle). Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit FR4, copper thick- ness: 35µm),full cycle. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Surge peak on-state current versus number of cycles. P(W) IT(RMS)(A) 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tc(°C) IT(RMS)(A) TO-220AB/DPAK/IPAK ISOWATT220AB 0 25 50 75 100 1250.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tamb(°C) IT(RMS)(A) DPAK (S=0.5cm²) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-2 1E-1 1E+0 K=[Zth/Rth] Rth(j-c) Rth(j-a) TO-220AB/DPAK/IPAK ISOWATT220AB DPAK/IPAK TO-220AB/ISOWATT220AB tp(s) -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL Tj(°C) 1 10 100 10000 ITSM(A) Non repetitive Tj initial=25°C Repetitive Tc=110°C One cycle t=20ms Number of cycles

Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: On-state characteristics (maximum values). Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. Fig. 10: DP AK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm). 0.01 0.10 1.00 10.001 100 500 tp (ms) ITSM (A), I²t (A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs 1.0 10.0 30.0 ITM(A) Tj max.: Vto= 0.90 V Rd= 120 mΩ Tj=Tj max. VTM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c T435 T410 T405 (dV/dt)c (V/µs) 0 25 50 75 100 1250 (dI/dt)c [Tj] / (dI/dt)c [Tj specified] Tj(°C) 0 4 8 1 21 62 02 42 83 23 64 00 100 Rth(j-a) (°C/W) DPAK S(cm²)

DPAK (Plastic) REF. DIMENSIONS Millimeters Inches Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 R 0.2 typ. 0.007 typ. V2 0° 8° 0° 8° R R FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 1.61.6 2.32.3

ISOWATT220AB (Plastic) REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 PACKAGE MECHANICAL DATA TO-220AB (Plastic) REF. DIMENSIONS Millimeters Inches A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 M B C A F L I e

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A http://www.st.com PACKAGE MECHANICAL DATA IPAK (Plastic) REF. DIMENSIONS Millimeters Inches A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.035 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 V1 10° 10° H L L1 G B D C A B3B6 E