DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
JJ JIEJIE MICROELECTRONICS CO.,Ltd JST04/JST04i Series/T4 Series 4A TRIACs DESCRIPTION: iPAK DPAK High current density due to double mesa 2 technology; SIPOS and Glass Passivation. JST04/JST04i series triacs is suitable for general purpose AC switching. They can be used 1 as an ON/OFF Function in applications such as 1 3 static relays, heating regulation, induction 2 motor stating circuits... or for phase contol 3 operation light dimmers, motorspeed controllers. T4X X Series are 3 Quadrants triacs, They are| specially recommended for use on inductive loads. The T0-220A Family are 2500V RMS insulating =p voltage. T1(1) MAIN FEATURES 10-2208 a(3) [ies [i ABSOLUTE MAXIMUM RATINGS Storage junction temperature range -40 to +150 Operrating junction temperature range -40 to +125 Repetitive Peak Off-state Voltage Tj=25°C 600and800 Vv Repetitive Peak Reverse Voltage Tj=25°C 600and800 Non repetitive Surge Peak Off-state Voltage 5 700and900 — tp=10ms, Tj=25°C Vv Non repetitive Peak Reverse Voltage 700and900 RMS on-state current iPAK/DPAK/TO-220B Tc=105°C . IT(RMS) 4 A (full sine wave) TO-220A Tc=100°C Non repetitive surge peak on-state current f=60Hz t=16.7ms ITsM A (full cycle, Tj=25°C) f=50Hz t=20ms It Value for fusing tp=10ms | et | 6 | As | Critical rate of rise of on-state current Ic=2xIcr, tr<100 ns, f=120Hz, Ti=125°C dl fat Peak gate current tp=20us, Tj=125°C Average gate power dissipation Tj=125°C TEL: +86-513-83639777 -1/6- http: //WWW.JIEJIE-CN.COM
JST04/JSTO4i Series/T4 Series JJ JieJie Microelectronics CO.,Ltd ELECTRICAL CHARACTERISTICS(Tj=25°C unless otherwise specified) @ JST04/JST04i Series JSTO4/JSTO4i Symbol Test Condition oa] | To | Unit III 5 | 5 | 10 | 10 Vo=12V RL=330 WesVern RSS OKO T1256 pacfwm | oz |v | IL IG=1.2IGT [| max [20 | 20 | 40 | a0 | ma | dVidt Vb=67%VDRM gate open Tj=125°C @ 14 Series Symbol Test Condition Quadrant Unit T405 | 7410 | 1435 a =f Vp=12V RL=330 Sr inef | ve fesew amore | ww fm[ ee [| ofa [os [a IL Ie=1.2Ier a foes fe a dVidt VD=67%VDRM gate open Tj=125°C | min. | 20 | 40 | 400 | Wis | (di/dt)e | (dV/dtyc=10V/ps Ti=125°C | 09 | 20 | — | ams Without snubber Tj=125°C | ~ | — [25 | TEL: 0513-83639777 -2/6- http: //WWW.JIEJIE-CN.COM
JST04/JSTO4i Series/T4 Series JJ JieJie Microelectronics Co.,Ltd STATIC CHARACTERISTICS Symbol vane) IDRM VD=VDRM VR=VRRM IRRM . THERMAL RESISTANCES Rth( J -C) Junction to Case(AC) “CIW
ORDERING INFORMATION
J ST 04 (i) - 800 T 4G Jie Jie Microelectronics CO.,Ltd Package: G:T0-2200B ict Class yer0.282 TRIAC SERIES 600:VoRM/VeRm>600V 800:VDRM/VRRM>800V In(rms): 4A INSULATED T 4 05-600 4H Imes}: AA 600:VDRM/VRRM2600V IcT Class 800:VDRM/VRRM2800V 05:5mA 10:10mA 35:35mA TEL: 0513-83639777 -3/6- http: //WWW.JIEJIE-CN.COM
JSTO4/JSTO4i Series/T4 Series Jd JieJie Microelectronics CO.,Ltd PACKAGE MECHANICAL DATA iPAK ; Ref. aT fawn] Tye [a es BE EA =] fo) ecfoss| —Jossjonrt —o a Har Ts2[ [6a loans] Torr i i 6 Pg Pe fez Jose oad] | | etea} foe Jaze] fo | He tea] fee facrat fore = Ete [fos Josse| fora ich} ps foot tors Ree ae DPAK aca ret a —] ow Cx[e2| [2a [oons| [085 | [Fe Joss) fois foot] —[o.26] onl J | [eyez [| 84 [ood —Jo2ra| tee LL | Fee oss) foe ore] —oaaa] Tq Zh Pere pee ozs] Joana] + OAS Ce [aa[ [ee Jozsi| [oz ; Ce faao] [400 Jo 73 [0181
7 Cor Jo35| [0 Joss [ose
’ ir] [oat | oma] X ber ep bet beep pe pep pe TEL: 0513-83639777 -4/6- http: //WWW.JIEJIE-CN.COM
JST04/JSTO4i Series/T4 Series JJ JieJie Microelectronics CO.,Ltd PACKAGE MECHANICAL DATA TO-220AB Gea Ref. ' [iin [Typ.[ Max. | Min. | Typ. [Wax | . i ed «SCO [e[ea9| [orale] joa roy" i [om [ra] [32 ome] [os —— Poy} ee fee | [ere|oaeeyforor ean ae a I =p LE 8 pe 2s : . od a _ [A [260] |zoe[ ato] [a7 | Pury apf forar | ie ed) Jt fs L. eg [vit [4orT | faery | TEL: 0513-83639777 -5/6- http//: WWW, JIEJIE-CN. COM
JST04/JSTO4i Series/T4 Series JJ JieJie Microelectronics CO.,Ltd FIG.1: Maximum power dissipation versus FIG.2: RMS on-state current versus case RMS on-state current(full cycle) temperature (full cycle) PW) ITIRMS)(A) a a Ss es A | CS SS ce 8 ee je ee ee ee ee Ne A es ek Fc Se ON a b>} ep TRMsy(a) | ee tel) Fh FIG.3: On-state characteristics (maximum FIG.4:Surge peak on-state current versus values) number of cycles In(A) ITSM(A) .========_=_=_= = SSS of | TTT TTT TT CTT) Pee Se eso SSS » Oreos Fem CEO SCR MPL eer] “EHR reece ttt +H ott} tte tt tt CO SO Sato | Oe y c=105% NU EPA er a Lt} ryt | Mrm(vyl 5 A a aPecles tH
1 LEIA TT TT TET TE a [LTT fT TT | TTT
a a a | i a ir co FIG.5: Non-repetitive surge peak on-state FIG.6: Relative variations of gate trigger current for a sinusoidal pulse with width current, holding current and latching current tp < 10ms. versus junction temperature(typical values) Irsw(A), P4(A%3) IGT IH,IL{TIVIGT.IH,IL[T}=25"C) ol] IE Ty] Ketter == ae Nee Sete EN TZ soa oe a Cll OS "SSS of feet st ae HAH BSE ee : [~ oC) “CELL Ititey ESE | LTT TTT PET a TEL: 0513-83639777 -6/6- http//: WWW. JIEJIE-CN. COM