T40XXXKS STMICROELECTRONICS | Alldatasheet
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© MICROELECTRONICS T40xxxKS STANDARD TRIACS FEATURES rv a IAMS) =40A A = Vorm = 400V to 800V as | AZ a INSULATING VOLTAGE 2500Vrms) (UL RECOGNIZED : E81734) ' we) / 4 XX _
DESCRIPTION
The T40xxxKS series triacs uses a high RD107 performance MESA GLASS technology. (Plastic) These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) [smo [rameter vat (Unt yams) | RMS on-state current Te=75°C 40 A (360° conduction angle) Itsm Non repetitive surge peak on-state current (7; initial = 25°C ) | Fo=ome| aw ‘| dl/dt Critical rate of rise of on-state current Repetitive 10 Alus Ig = 500 mA dig /dt = 1 Ajus. F=50Hz Non 50 Repetitive Tstg Storage and operating junction temperature range - 40, +150 °C Tj - 40, +125 Maximum lead temperature for soldering during 10s ymbo! arameter pofm|s | n | VorM Repetitive peak off-state voltage 400 700 | 800 Vv VaRM Tj =125°C January 1995 5
| Fini-o | JuncontocasetorAC s60°oonduconangie(F-60H2)| | oe | sow | GATE CHARACTERISTICS (maximum values) Peiay=1W Pem=10W(tp=20us) lam =4 A (tp = 201s)
ELECTRICAL CHARACTERISTICS
| mee ol I lat Vp=12V (DC) Ri=33Q | Tj=25°C | um [max] so | 50 | mA ee ee "eam eee br = 56A dlg/dt = 3A/us [mere as0ma cateonmn [Tease | [wax] oo] 75 | ma | tee t2ler Tin25°0 mA i ie oe [vw [ram son wnc0oe [meas] [wx] a7 itv pie [es GESep wo a a Gate open Fevane[wae=swams — |tewso] [ww] 6 ‘| vas| * Foreither polarity of electrode Ae voltage with reference to electrode Ay
ORDERING INFORMATION
TRIAC MESA GLASS al 7 | — CURRENT + SENSITIVITY '———+ VOLTAGE
Fig.1 : Maximum RMS power dissipation versus Fig.2 : Correlation between maximum RMS power RMS on-state current. dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) P (Ww) Tease (°C) 60 60 Ke at = 180° 50 4) Ql 180 Z| 50h | ao OO ate | DS ANG 40 d= 120° 2 40 N <P a MG 5 wore | eT | RANT ss | ok be Nw 20 : am 20 aN 105 x wo i wT | | | | QQ his WA a 1 (A) YY a‘ T(RMS) Tamb (°C) ‘ °o 6510 15°20 25 30 35 40 °o 204060 80 100 120 1407 Fig.3 : RMS on-state current versus case tempera- Fig.4 : Relative variation of thermal impedance ture. junction to case versus pulse duration. grees) 12M a eee See ee eee
40 N CPT leery i
N — ee \\ ee UNM TIT MELEE LEIA So eee eee eee 10 ' EET ATE PTT dd fae TN) a IMEC CTT Tse 0 10 20 30 40 50 60 70 80 90 100110120130 1E3 1E2 1E4 1E+0 1E+1 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. ‘gti ‘tT (A) og aus TSI ih[T]=25 °C] 00" ut a | | RR | aah | | J | Tt 7 Tf 250 | ee EE A =H] teh a tsol___ HL aS RE LSS 100 IS. all vol | FAD TT ee | et il 4 t) O44) 20 20 40 60 80 100 120 140 1 10 100 1000 &j $Ss-THOMSON 3/5 SYA, inicRowacTaoNics
Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I*t. Tyg (A). Pt (A’s) 'rm(A) a a | Pe fog | eee | | re ee ee =a ee re rr 2 | — ee ee a ———— ay TT ee 100 jet Ty} tt 1 10 0 05 1 15 2 25 3 35 4 Sr. ORISRORLECTASEICS
RD107 (Plastic) a2 |__DMENSions— , L me Millimeters [Inches | ’ Gan rat | [aool | —_|isrs jae| | [eeof | [oser _ fe] | feof | [1.063 c2 et [or] | esol | fooss [co] | [rsof | [ose Per | | [ss] | forse ZE |e | [o7s{oss| |o.029/0.033 ALN Ce [Jao [as | lorsrfo77 J OG +} SE |B Ce [eas oss[ —Jocorelo.oe Rhy) a CH | [62 [6s | |ozaalo.a8 E SS Li | [47 [48] [or8sfo.189 1135] | foaal |_| Le] [14] 16] [ossi[o.630 Marking : type number Weight : 20g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics, Specifications mentioned in this publication are subjectto charge without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in ile support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. & SGS-THOMSON 5/5 on BIE, gras