T4016MKS STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
7 ) SGS-THOMSON e MICROELECTRONICS T4016xKS SNUBBERLESS TRIACS
FEATURES
= IRM) = 40A Al a HIGH COMMUTATION: (dl/dt)¢c = 22A/ms J s INSULATING VOLTAGE = 2500Viams) fpr (UL RECOGNIZED : E81734) 68 g DESCRIPTION Ue | > The T4016xKS series of isolated triacs uses a high — performance MESA GLASS technology. f=) mt / as The SNUBBERLESS™ concept offer suppression of RC network and it is suitable for application such as phase control and static switching on in- RD107 ductive or resistive load. (Plastic) ABSOLUTE RATINGS (limiting values) [smo] Parameter S| a | Iams) RMS on-state current Te= 75°C A (360° conduction angle) Itsm Non repetitive surge peak on-state current | sos A enim | wo | di/dt Critical rate of rise of on-state current Repetitive Alus la=50mA _— dig/dt =0.1 Alus. F =50 Hz Non 100 Repetitive Tstg Storage and operating junction temperature range - 40to +125 °C qj - 40 to +125 Maximum lead temperature for soldering during 10s | 20 S| | Voltage ome | me ee VoRM Repetitive peak off-state voltage 700 Vv Vanm | Tj =125°C April 1995, 15 WM 79259237 OO74L77 797
a EN Fe [ses anetr a0 rocionge ran] ee | on GATE CHARACTERISTICS (maximum values) Paay=1W Pem=10W(tp=20ys) lam =4A (tp =20us)
ELECTRICAL CHARACTERISTICS
= _ = lor | Vo=12V (00) Fi=330 | Tj-25°C il ee fee Pee ea ier [erree mean [eare o [we] sv] er [eon nos ieee] vet [ww] or Pv J a a ee lg =500mA dio/dt = 3A/us Ta eaons case [awe [ we] ho | Wge 12ber Tiz25c | tm | tyeP{ 50 | ma fee Pee "| Paar [rare eae [ieee] [we] rT ce fixe fase feel ea InRM Va =VRAM or a a (dvt}c* | Without snubber Tj= 125°C [mn[ 22 | Aims i i ee * For either polarity of electrode AQ voltage with reference to electrode At
ORDERING INFORMATION
TRIAC MESAGLASS a | | L PACKAGE: | KS = RD107 Insulated CURRENT-———_ SENSITIVITY —+ VOLTAGE mm 7929237 0074678 b23 im
Fig.1 : Maximum power dissipation versus RMS Fig.2 : Correlation between maximum power dissi- on-state current. pation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. wo o. (w) Tease (°C) Bat HS NN 50 4 —— 4 50S L 1c wort Te TN AN IE wont tL 1 PANT foe wor | gL | LNA he NBA | | trem} mee TTT TNT 0 5 10 15 20 2 30 35 40 0 10 20 30 40 50 60 70 8 90 100110120130 Fig.3 : RMSon-state current versus case tempera- fis i, erative variation of fhermal impedance 'yamsy(A) Zth(-eyRth(-c)
50 SS a
el NT] STE He “TELET EEN EL] ee POA rn
10 Tasleg \\ TUT
° vet tN} go LIVI TAI UIT | Teoh 0 10 20 30 40 50 60 70 80 90 100 110 120130 1E-3 41E-2 1E4 1E+0 1E+t Fig.5 : Relative variation of gate trigger current Fig.6 : Non repetitive surge peak on-state current and holding current versus junction temperature. versus number of cycles. lott) ITH) hsm”) eee Oe ae ell mn en ||| LS Tagg aN) RT | to) TS CT TREE a ocean ef Smt TTT LTT oaL_L_[ [| TT] 0 40-20 0 20 40 60 80 100 120 140 1 10 100 1000 M@™ 7929237 0074679 SbT
Fig.7 : Non repetitive surge peak on-state current _ Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of It. Lrg (A): Pt (Ata) 'yMA) 1000 pe ee a a SSS om = Tinea = 8] PIES Ss SEES i eee = ee ee SS A bene —~ 2 ee a a eee _—— ae a bf EE 0010 -—+—+-F Fh I —— a Ps Oe Oc 1 10 0 Of 1 15 #2 25 3 #35 4
45 Gr “THOMSON
OO Tf. Sce-THomsON CT @ 7929237 0074680 241 mm
RD 107(Plastic) a2 a G |_Mitlimeters | inches | l cu | A | {| [ao] | f.s75] b1 pitt |_at_ | [eso]s03] _[1.177/1.199 as a ore |e | | fazol | fr.063| 2 ae [Lo | | feso] lo.o4s| ZE -e |e T |o7sloss] [o.c29[0.033] —affaWn feo [as Tossrear7| J 6-1 eet Ba [Joss [oss] — looigo cz Sey) Y LH | [e2}es | |o2sd0.249 E —— pu | [47 tae] [otaslo.19| | K |i1a5] | foaae] | A Le [ fratie [ [o.551[0.630} Marking : type number Weight : 20g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is ganted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 57 8S8:THomson EL) mM! 7929237 0074681 118 am