T2N7002H LUGUANG | Alldatasheet

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Technical content

Features

 Low on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2)  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor  Switching application Mechanical Data  Case: SOT-23, SOT-323, SOT-523, DFN1006-3, SOT-723  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208 T2N7002H T2N7002HW SOT-23 SOT-323 T2N7002HT T2N7002HL SOT-523 DFN1006-3 T2N7002HM SOT-723 http://www.lgesemi.com Revision:20200722-P1 mail:lge@lgesemi.com

Ordering Information

Part Number Package Shipping Quantity Marking Code T2N7002H SOT-23 3000 pcs / Tape & Reel 7002K T2N7002HW SOT-323 3000 pcs / Tape & Reel RKS T2N7002HT SOT-523 3000 pcs / Tape & Reel 7002K T2N7002HL DFN1006-3 10000 pcs / Tape & Reel 72 T2N7002HM SOT-723 10000 pcs / Tape & Reel 72

Continuous Drain Current (TA = 70° C) *1 240 mA Pulsed Drain Current (tp =10μs, TA = 25°C) IDM 2000 mA Single Pulse Avalanche Energy *3 EAS 0.11 mJ Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Power Dissipation (TA = 25°C) *1 SOT-23 PD 0.35 W SOT-323 0.25 SOT-523 0.15 DFN1006-3 0.15 SOT-723 0.15 Thermal Resistance Junction to Ambient Air SOT-23 RθJA 357 ° C/W SOT-323 500 SOT-523 833 DFN1006-3 833 SOT-723 833 Thermal Resistance Junction to Lead SOT-23 RθJL 234 ° C/W SOT-323 313 SOT-523 521 DFN1006-3 521 SOT-723 521 Thermal Resistance Junction to Case SOT-23 RθJC 195 ° C/W SOT-323 261 SOT-523 434 DFN1006-3 434 SOT-723 434 Thermal Characteristics Parameter Symbol Value Unit Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate -Source Voltage VGSS ± 20 V Continuous Drain Current (TA = 25° C) *1 ID LGET2N7002H N-Channel Enhancement Mode MOSFET http://www.lgesemi.com Revision:20200722-P2 mail:lge@lgesemi.com

RDS(ON) Drain-Source On-resistance *2 VGS = 10V, ID = 0.5A - 1 2.5 Ω VGS = 5V, ID = 0.05A - 1.1 3 VGS = 4.5V, ID = 0.5A - 1.2 4 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250μA 1 1.5 2.5 V RG Gate Resistance VGS = 0V, f = 1MHz - 39 - Ω Dynamic Characteristics CISS Input Capacitance VGS = 0V VDS = 20V f = 1.0MHz - 26.7 - pF COSS Output Capacitance - 7.1 - CRSS Reverse Transfer Capacitance - 2.2 - Switching Characteristics td(on) Turn-on Delay Time *4 VDD = 30V, ID = 0.2A VGS = 10V, RG = 25Ω RL = 150Ω - 6 - ns tr Turn-on Rise Time *4 - 5 - td(off) Turn-Off Delay Time *4 - 25 - tf Turn-Off Fall Time *4 - 15 - QG Total Gate-Charge VDS = 10V VGS = 4.5V ID = 0.2A - 0.44 - nC QGS Gate to Source Charge - 0.14 - nC QGD Gate to Drain (Miller) Charge - 0.2 - nC Source-Drain Diode Characteristics VSD Diode Forward Voltage *2 IS = 0.3A, VGS = 0V - 0.85 1.2 V Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2% 3. The EAS data shows Max. rating. The test condition is VDD = 30V, VGS = 10V, L = 0.1mH 4. Guaranteed by design, not subject to production Electrical Characteristics (@ TA = 25°C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 60 - - V IDSS Drain to Source Leakage Current VDS = 60V, VGS = 0V - - 1 μA IGSS Gate-body Leakage VGS = ±20V, VDS = 0V - - ±10 μA On Characteristics http://www.lgesemi.com Revision:20200722-P3 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET

Ratings and Characteristics Curves (@ TA = 25C unless otherwise specified) Fig 1 Power Dissipation Fig 3 Typical Output Characteristics Fig 5 On-Resistance vs. Gate-Source Voltage Fig 2 Drain Current Fig 4 On-Resistance vs. Drain Current and Gate Voltage Fig 6 Body-Diode Characteristics VGS = 2.5V VGS = 3 V VGS = 3.5V VGS = 4 V VGS = 4.5V VGS = 5 V ~ 10 V 0.5 1.5 0 1 2 3 4 5 ID(A) VDS(V) VGS = 4.5V VGS = 5 V VGS = 10 V 0.5 1.5 RDS(ON)(Ω) ID(A) -55℃ 150℃ 25℃ 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)(Ω) VGS(V) ID = 0.5A 25℃ -55℃150℃ 0.5 1.5 IS(A) VSD(V) SOT-23 SOT-323 SOT-523 DFN1006-3 SOT-7230 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150 PD(W) TA(℃) 100 200 300 400 0 25 50 75 100 125 150 ID(mA) TA(℃)http://www.lgesemi.com Revision:20200722-P4 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET

Fig 7 Normalized On-Resistance vs. Junction Temperature Fig 9 Capacitance Characteristics Fig 11 Normalized Breakdown Voltage vs. Junction Temperature Fig 8 Transfer Characteristics Fig 10 Gate-Charge Characteristics Fig 12 Normalized VGS(th) vs. Junction Temperature -55℃ 25℃ 150℃ 0.5 1.5 0 1 2 3 4 5 6 ID(A) VGS(V) VDS = 10V VGS = 10V; ID = 0.5A VGS = 4.5V; ID = 0.5A 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -75 -50 -25 0 25 50 75 100 125 150 RDS(on), Normalized Static Drain-Source OnState Resistance TJ(℃) ID = 250uA 0.7 0.8 0.9 1.1 -75 -50 -25 0 25 50 75 100 125 150 VGS(th), Normalized Threshold Voltage TJ(℃) ID = 250uA 0.9 0.95 1.05 1.1 1.15 -75 -50 -25 0 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage TJ(℃) Ciss Coss Crss 0.1 1 10 100 C(pF) VDS(V) f = 1 MHz 0.5 1.5 2.5 3.5 4.5 VGS(V) Qg(nC) VDS = 10V；ID = 0.2Ahttp://www.lgesemi.com Revision:20200722-P5 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET

Fig 13 Safe Operating Area Fig 14 Normalized Maximum transient thermal impedance δ = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.01 0.1 0.000001 0.0001 0.01 1 100 Normalized Zth(j-a) tP(s) tp= 10 us 100 us 1 ms 10 ms 100 ms0.01 0.1 0.1 1 10 100 ID(A) VDS(V) TA = 25℃ δ = tp/T= 0.01http://www.lgesemi.com Revision:20200722-P6 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET Package Outline Dimensions (Unit: mm) A B C D E J H K G A B K D E J H G C SOT-23 Dimension Min. Max. A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 SOT-323 Dimension Min. Max. A 2.00 2.20 B 1.15 1.35 C 0.90 1.10 D 0.15 0.35 E 0.25 0.40 G 1.20 1.40 H 0.02 0.10 J 0.05 0.15 K 2.20 2.40

F A K B J C D E G H SOT-523 Dimension Min. Max. A 1.50 1.70 B 0.75 0.85 C 0.60 0.80 D 0.15 0.30 E 0.30 0.40 F 0.25 0.40 G 0.90 1.10 H 0.02 0.10 J 0.08 0.18 K 1.45 1.75 http://www.lgesemi.com Revision:20200722-P7 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET SOT-723 Dim Min Max A 1.10 1.30 B 0.70 0.90 C 0.40 0.54 D 0.22 0.42 E 0.10 0.30 F 0.12 0.32 G 0.70 0.90 J 0.08 0.15 K 1.10 1.30 J C B K D A E G F DFN1006-3 Dimension Min. Typ. Max. A 0.95 1.00 1.075 B 0.47 0.50 0.53 C 0.55 0.60 0.675 D 0.45 0.50 0.55 E/J 0.20 0.25 0.30 F - 0.40 - G - 0.35 - H 0 0.03 0.05 I 0.10 0.15 0.20

Mounting Pad Layout (Unit: mm) SOT-23 SOT-323 SOT-523 0.90 0.80 2.00 0.95 0.95 1.90 0.650.65 0.90 0.70 0.356 0.508 1.000 0.787 1.803http://www.lgesemi.com Revision:20200722-P8 mail:lge@lgesemi.com T2N7002H N-Channel Enhancement Mode MOSFET DFN1006-3 SOT-723 1.15 0.50 0.45 0.40 0.40