T16A6CI

T16A6CI KEC | Alldatasheet

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Technical content

1. 10. 28 1/3 SEMICONDUCTOR TECHNICAL DATA T16A6CI Bi-Directional Triode Thyristor 16A Mold TRIAC Revision No : 2 AC POWER CONTROL APPLICATION.

FEATURES

ᴌRepetitive Peak Off-state Voltage : VDRM=600V. ᴌR.M.S On-State Current : IT(RMS)=16A. ᴌHigh Commutaing (dv/dt) ᴌIsolation Voltage : VISOL=1500V AC (UL Recognized : E166398)

APPLICATIONS

ᴌSwitching Mode Power Supply ᴌSpeed Control of Small Motors ᴌSolid State Relay ᴌLight Dimmer ᴌWashing Machine ᴌTemperature Control of Heater DIM MILLIMETERS 1. T1 2. T2 3. GATE TO-220IS

10.30 MAX

15.30 MAX

2.70Ź0.30

0.85 MAX

Ѹ3.20Ź0.20 3.00Ź0.30 A B C D E F G 12.30 MAX

0.75 MAXH

13.60Ź0.50

3.90 MAX

1.20 1.30 2.54 4.50Ź0.20 6.80 2.60Ź0.20 10Ɓ J K L M N O P Q R F O Q1 2 3 L P N B G JM D N TT H E RT V S K L U T S 0.5 25Ş 2.60Ź0.15V U D A C MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Non-Repetitive Peak Off-state Voltage VDSM 700 V Repetitive Peak Off-state Voltage VDRM 600 V R.M.S On-state Current (Full Sine Waveform Tc=73ᴱ) IT(RMS) 16 A Peak One Cycle Surge On-state Current (Non-Repetitive) ITSM 150 (50Hz 1 Cycle) 165 (60Hz 1 Cycle) A I2t Limit Value (1mS⏊t⏊10mS) I2t 112.5 A2S Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG(AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj -40ᴕ125 ᴱ Storage Temperature Range Tstg -40ᴕ125 ᴱ Isolation Voltage (Ac, t=1min.) VISOL 1500 V

1. 10. 28 2/3 T16A6CI Revision No : 2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Repetitive Peak Off-state Current IDRM VDRM=Rated - - 20 ỌA Gate Trigger Voltage Ẑ VGT VD=12V, RL=20ή V ẑ T2(+), Gate(-) - - 1.5 Ẓ T2(-), Gate(-) - - 1.5 ẓ T2(-), Gate(+) - - - Gate Trigger Current Ẑ IGT mA ẑ T2(+), Gate(-) - - 30 Ẓ T2(-), Gate(-) - - 30 ẓ T2(-), Gate(+) - - - Peak On-State Voltage VTM ITM=25A - - 1.5 V Gate Non-Trigger Voltage VGD VD=Rated, Tc=125ᴱ 0.2 - - V Holding Current IH VD=12V, ITM=1A - - 50 mA Critical Rate of Rise of Off-state Voltage dV/dt Tj=125ᴱ, VDRM=Rated Exponential Rise - 300 - V/ỌS Critical Rate of Rise of Off-state Voltage at commutation (dV/dt)C Tj=125ᴱ, (di/dt)C=-8.7A/mS, VD=2/3VDRM 10 - - V/ỌS Thermal Resistance Rth(j-c) Junction to Case, AC - - 2.5 ᴱ/W

1. 10. 28 3/3 T16A6CI Revision No : 2 R.M.S ON-STATE CURRENT I (A)T(RMS) T(RMS)T(AV)P - I R.M.S ON-STATE CURRENT I (A)T(RMS) T(RMS)Ta MAX - I INSTANTANEOUS ON-STATE VOLTAGE ν (V)T TT NUMBER OF CYCLES AT 60Hz SURGE ON-STATE CURRENT(60Hz) SURGE ON CURRENT (A) TRANSIENT THERMAL IMPEDANCE INSTANTANEOUS ON-STATE CURRENT (A)T MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( C) TEMPERATURE Tc MAX ( C) MAXIMUM ALLOWABLE CASE T(RMS)R.M.S ON-STATE CURRENT I (A) Tc MAX - I T(RMS) DISSIPATION P (W) AVERAGE ON-STATE POWER T(AV) TRANSIENT THERMAL IMPEDANCE r ( C-W)th(j-c) ι - ν ι TIME NUMBER OF CYCLES AT 60Hz INSTANTANEOUS GATE VOLTAGE V (V)G INSTANTANEOUS GATE CURRENT I (mA)G GATE TRIGGER CHARACTERISTIC 010 10 -1 12 10 10 3 25 C PEAK GATE PEAK GATEAVER AGE GATE DISSIPATION GATE TRIGGER VOLTAGE GATE NON TRIGGER VOLTAGE DISSIPATIONVOLTAGE CURRENT PEAK GATE TIME 1.81.41.00.6 2.2 2.6 3.0 100 120 140 125 6420 8 10 12 14 16 18 20 1010 100 120 140 160 180 200 151050 140 120 100 0.8 1.6 1.2 0.4 4.0 3.0 3.2 2.8 2.4 2.0 10 10 (JUNCTION TO CASE)