T16XXXH STMICROELECTRONICS | Alldatasheet
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e MICROELECTRONICS T16xxxH STANDARD TRIACS
FEATURES
w It(7RMS) = 16A « Vorm = 400V to 800V = High surge current capability Me fige G
DESCRIPTION
The T1i6xxxH series of triacs uses a high TO220 performance MESA GLASS technology. These non-insulated parts are intended for general purpose switching (Plastic) and phase control applications. ABSOLUTE RATINGS (limiting values) [Symbol | Parameter =| Value | Unit IT(RMS) RMS on-state current Te= 90°C (360° conduction angle) (Tj initial = 25°C ) ‘e=tome| 150 Ft Veto fortsing rentome| «|e Critical rate of rise of on-state current Repetitive Ajus la=500mA_ dicdtt =1 Ais. F = 50 Hz Non rable | Tstg Storage and operating junction temperature range - 40, +150 Lj - 40, +125 Ti Maximum lead temperature for soldering during 10s at a © 4.5mm from case rma | jon Vorm Repetitive peak off-state voltage 700 V VRAM Tj = 125°C January 1995 5
Symbol [ SSCP arametar «Satu Unt a Trini-a | voneiontocaseter AC S60rconducionangle(F=eorin| 18 ‘| -M GATE CHARACTERISTICS (maximum values) Paway=1W Pew=10Wi(tp=20 us) lam=4A(tp=20 us)
ELECTRICAL CHARACTERISTICS
|__ Sensitivity Test Conditions Quadrant met] ttc femme | lar | Vo=12V (OC) Ri=ssa | Tj-25°° | HM | max} 50 | 50 | Wer [very ©G nase |Trasc | rmmv|maxl a5 [| v_ Veo | vovom Rssaa [tes] univ [MN | o2 | v_ tot Vo=Vprm ke=500mA | Tj=25°C | Fil-Ill-lV | TYP "aa eee "m= [t= 250mA Gateopen | tH25c | [Max] 50 [ 75 | ma ee ie __Vru" | tne 22.5A tp=380us | Tima5ec | | MAX 5 | oan | Yesier | ease |__twif te Tiettorc| | max] 25 | ma el Gate open rave | cuaye=Tame _[tenoc| fwn| 6 | 10 | vie * For either polarity of electrode Ao voltage with reference to electrode A;
ORDERING INFORMATION
T #1 12 M H TRIAC MESA GLASS | 1 | | L PACKAGE: H = T0220 Non-insulated CURRENT + SENSITIVITY ‘“-~--———— VOLTAGE
Fig.1 : Maximum RMS power dissipation versus Fig.2 : Correlation between maximum RMS power RMS on-state current. dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) P (W) Tcase °C) 20 m TITLLILELILI4 of Td TI . J rnstiow 18: T_ ee A : —— rh ed np =P) a $= oO a 9, CT
10 Oé= 90 ait 10 vw,"
Lie CeerT rr rir) gf RAAT
4 Ob= 30° gee | |) tt pe ee ee SN
, . Zee a ee a owe | it P| 0 Tempo) TT Tt CUAL 0123465 67 8 9 1011 12 1314 15 16 0 20 40 60 80 100 120 140 Fig-3: RMS on-state current versus Case tempera- Veeus pulee dur ayariation of thermal impedance ure, . sens) ™) ee a) =a saa? SER AE in aca Sere eee A AY A tease) $$ h- Ty ! A noe | 0 10 20 30 40 50 6&0 70 80 90 100110120130 1£-3 1E-2 1E-1 1E+0 41E+4 1E+2 5E+2 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. BETEES"C) intraB™C) we - e+ +1777] || | | RSSEEEES CHT a oe a MNINT Tr l“"=" Th. ord a A A OA SSO Til
2 ORAS Ft NS eee
9 A i |||
06| | ey |} | [ember otevetos | TTT ETT os eo Pe P -40 -20 0 20 40 #4«60 80 100 120 140 1 10 100 1000
Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width :t< 10ms, and cor- responding value of Ft. Ss == —o ee soo er oT oT_ LO — Vie =0.92V es es ee ee ee ee —— anal re ee CY | ee se ee 10 7 ey | TT 1 10 0 05 115 225 3 35 4 «4:5 4/5 -THOMSON
TO220 Non-insulated (Plastic) . 3 pc} | fer] | jose! B oD] 127] | fo. 500] c Fl] | 42] | joes) Gi | [30] | jos Ni m [LL] | Joo|] | /o035: N | M|27) | joo) | UNi [254] | foroo] | Pt | fits] | |o.oas' Marking : type number Weight: 1.89 Information furmished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third 4 parties which may result from its use. No nthe pubaton by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this ication are subject to charge without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critcal components in lite support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - All nghts reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. - 5/S