T1250H-8A

T1210H JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 6- http://www.jjwdz.com T1210H/T1220H/T1235H/T1250H Series 12A TRIACs Rev.4.0 DESCRIPTION: T12xxH series triacs of high junction temperature with high dv/dt rate with strong resistance to electromagnetic interference provide high ability to withstand the shock loading of large current. They are especially recommended for use on inductive load and high environment temperature condition. T12xxH-xxA provides insulation voltage rated at 2500V RMS and T12xxH-xxF provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink complying with UL standards (File ref: E252906). MAIN FEATURES Symbol Value Unit IT(RMS) 12 A VDRM /VRRM 600 and 800 V Tjmax 150 ℃ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-150 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM + 100 V Non repetitive peak reverse voltage VRSM VRRM + 100 V RMS on-state current TO-220A(Ins) (TC=98℃) IT(RMS) 12 A TO-220B(Non-Ins) (TC=113℃) TO-220F(Ins) (TC=100℃) TO-263 (TC=118℃) T1(1) G(3) T2(2) TO-220A Insulated TO-220B Non-Insulated TO-220F Insulated 1 2 3 1 2 3 1 2 3 TO-263 1 3

T12xxH Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 6- http://www.jjwdz.com Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 120 A I2t value for fusing (tp=10ms) I2t 78 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt 50 A/μs Peak gate current IGM 2 A Average gate power dissipation PG(AV) 1 W Peak gate power PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit T1210H T1220H T1235H T1250H IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 10 20 35 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.5 V VGD VD=VDRM Tj=150℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX 20 40 50 70 mA Ⅱ 35 55 70 100 IH IT=100mA MAX 20 30 45 60 mA dV/dt VD=2/3VDRM RGK=1KΩ Tj=150℃ MIN 200 500 1000 1500 V/μs (dV/dt)c (dI/dt)c=-5.3A/ms Tj=150℃ MIN 1 5 15 20 V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=17A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=150℃ 2 mA

T12xxH Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 6- http://www.jjwdz.com THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-220A(Ins) 2.7 ℃/W TO-220B(Non-Ins) 1.9 TO-220F(Ins) 2.3 TO-263 0.97

ORDERING INFORMATION

IT(RMS):12A 6:VDRM /VRRM≥600V 8:VDRM /VRRM≥800V 10:IGT1-3≤10mA 20:IGT1-3≤20mA 35:IGT1-3≤35mA 50:IGT1-3≤50mA E:TO-263 A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) High junction temperature PACKAGE MECHANICAL DATA

T12xxH Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 6- http://www.jjwdz.com PACKAGE MECHANICAL DATA A F C E G B D H ΦMax 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220A Ins JIE A F C E G B D H Φ Max 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220B Non-Ins

T12xxH Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 6- http://www.jjwdz.com PACKAGE MECHANICAL DATA A D E B C F Φ Max 3.5mm G Dimensions Millimeters InchesRef. A B C D E F G H 4.50 0.74 0.47 2.45 4.90 0.83 0.65 2.75 0.177 0.029 0.019 0.096 0.193 0.033 0.026 0.108 2.60 3.00 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.4 0.386 0.410 6.40 6.80 0.252 0.268 3.30 0.130 45° 3.63 0.143 0.80 0.031 45°TO-220F Ins H FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 3 6 9 12 15 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 150 TO-220F(Ins) TO-263 TO-220B(Non-Ins) TO-220A(Ins) α=180°

T12xxH Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 6 / 6- http://www.jjwdz.com FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 120 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 Tj=25℃ 100 100 Tj=Tjmax t=20ms One cycle FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 20 100 1000 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 160 IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 Tj (℃) dI/dt 2000 IH&ILI t2 ITSM IGT Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infring ement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the fourth version which is made in 20-July-2015. This docume nt supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.