T1235H-600G

T1235H STMICROELECTRONICS | Alldatasheet

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SNUBBERLESS ™ HIGH TEMPERATURE 12A TRIACS April 2002 - Ed: 5A MAIN FEATURES:

DESCRIPTION

Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. Symbol Value Unit IT(RMS) 12 A VDRM /VRRM 600 V IGT (Q1) 35 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Tc = 135°C 12 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 145 A F = 50 Hz t = 20 ms 140 I²tI ²t Value for fusing tp = 10 ms 112 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 150°C 50 A/µs VDSM /VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C 700 V IGM Peak gate current tp = 20 µs Tj = 150°C 4 A PG(AV) Average gate power dissipation Tj = 150°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 150 °C G G G TO-220AB (T1235-T) D 2PAK (T1235-G)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES S: Copper surface under tab PRODUCT SELECTOR Symbol Test Conditions Quadrant Value Unit IGT (1) VD = 12 V RL = 33 Ω I - II - III MAX. 35 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 150°C I - II - III MIN. 0.15 V IH (2) IT = 100 mA MAX. 35 mA IL IG = 1.2 IGT I - III MAX. 50 mA II 80 dV/dt (2) VD = 67 % VDRM gate open Tj = 150°C MIN. 300 V/µs (dI/dt)c (2) Without snubber Tj = 150°C MIN. 5.3 A/ms Symbol Test Conditions Value Unit V TM (2) I TM = 17 A tp = 380 µs Tj = 25°C MAX. 1.5 V Vto (2) Threshold voltage Tj = 150°C MAX. 0.80 V R d (2) Dynamic resistance Tj = 150°C MAX. 25 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 150°C 5.5 mAVD /VR = 400 V (at mains peak voltage)Tj = 150°C 3.5 Symbol Parameter Value Unit R th(j-c) Junction to case (AC) D ²PA K TO-220AB 1.2 °C/W R th(j-a) Junction to ambient S = 1 cm² D ²PA K 45 °C/W TO-220AB 60 Part Number Voltage Sensitivity Type Package T1235H-600G 600 V 35 mA Snubberless D ²PAK T1235H-600T 600 V 35 mA Snubberless TO-220AB

ORDERING INFORMATION

Part Number Marking Weight Base quantity Packing mode T1235H-600G T1235H600G 1.5 g 50 Tube T1235H-600G-TR T1235H600G 1.5 g 1000 Tape & reel T1235H-600T T1235H600T 2.3 g 250 Bulk T1235H-600TRG T1235H-600T 2.3 g 50 Tube Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm), full cycle. Fig. 3: Relative variation of thermal impedance versus pulse duration. T 12 35 H - 600 G (-TR) TRIAC SERIES SENSITIVITY: 35: 35mA VOLTAGE: 600: 600V CURRENT: 12A PACKAGE: G: D PAK T: TO-220AB PACKING MODE: Blank: Tube (D PAK) Blank: Bulk (TO-220AB) RG: Tube (TO-220AB) -TR: Tape & Reel (D PAK) HIGH TEMPERATURE 02468 1 0 1 20 IT(RMS)(A) P(W) 0 25 50 75 100 125 1500 Tc(°C) IT(RMS)(A) 0 25 50 75 100 125 1500 Tamb(°C) IT(RMS)(A) DP A K (S=1cm ) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 tp(s) K=[Zth/Rth] Zth(j-c) Zth(j-a)

Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: On-state characteristics (maximum values). Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). -40 -20 0 20 40 60 80 100 120 140 1600.0 0.5 1.0 1.5 2.0 2.5 Tj(°C) IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL 1 10 100 10000 100 125 150 Number of cycles ITSM(A) Non repetitive Tj initial=25°C Repetitive Tc=135°C One cycle t=20ms 0.01 0.10 1.00 10.00100 1000 2000 tp(ms) ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs 100 200 VTM(V) ITM(A) Tj=25°C Tj max. Vto = 0.80 V Rd = 25 mΩ Tj max. 25 50 75 100 125 1500 Tj(°C) (dI/dt)c [Tj] / (dI/dt)c [Tj=150°C] 1.0 2.0 3.0 4.0 5.0 6.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Fig. 10: Leakage current versus junction temperature for different values of blocking voltage (typical values). Fig. 11: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. Fig. 12: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm). 50 75 100 125 1501E-3 1E-2 1E-1 1E+0 1E+1 Tj(°C) IDRM/IRRM(mA) VD=VR=600V VD=VR=400V VD=VR=200V 0 2 4 6 8 10 12 14 16 18 200 100 200 300 400 500 600 700 Rth(c-a)(°C/W) VDRM/VRRM(V) Tj=150°C Rth(j-c)=1.2°C/W 0 4 8 1 21 62 02 42 83 23 64 00 S(cm²) Rth(j-a) (°C/W) D²PAK

TO-220AB (Plastic) REF . DIMENSIONS Millimeters Inches A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 M B C A F L I e

D²PAK (Plastic) REF . DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0° 8° 0° 8° A D R 2.0 MIN. FLAT ZONE C G L B E FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 8.90 3.70 1.30 5.08 16.90 10.30 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com