T1235-600G STMICROELECTRONICS | Alldatasheet

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Technical content

T1235-600G January 1998 - Ed: 1D HIGH PERFORMANCE TRIAC Symbol Parameter Value Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 600 V IT(RMS) RMS on-state current (360° conduction angle) Tc= 105°C1 2 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 126 A tp = 10 ms 120 I2tI 2t Value (half-cycle, 50 Hz) tp = 10 ms 72 A 2s dI/dt Critical rate of rise of on-state current IG = 500 mA dI G /dt = 1 A/µs. Repetitive F = 50 Hz

20 A/ µs

Operating junction temperaturerange - 40, + 150 - 40, + 125 Tl Maximum temperaturefor soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values) D 2PAK HIGH COMMUTATION (dI/dt)c > 6.5 A/ms without snubber HIGH STATIC dV/dt > 500 V/µs

FEATURES

The T1235-600G triac uses a high performance SNUBBERLESS TM technology. The part is intended for general purpose applications using surface mount technology.

DESCRIPTION

PG (AV)=1W P GM =1 0W( t p=2 0µs) I GM = 4 A (tp = 20µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambiant (S=1cm2)4 5 °C/W Rth(j-c) Junction to case for DC 1.8 °C/W Rth(j-c) Junction to case for AC 360°conduction angle (F=50Hz) 1.4 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant Sensitivity Unit IGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III MIN 2 mA MAX 35 VGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III MAX 1.3 V VGD VD =VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V IH *I T= 100mA Gate open Tj= 25 °C MAX 35 mA IL IG = 1.2 IGT Tj = 25°C I-III MAX 50 mA II MAX 80 VTM * ITM = 17A tp= 380µs Tj= 25 °C MAX 1.5 V IDRM VD =V DRM Tj= 25°C MAX 5 µA IRRM VR =V RRM Tj= 125°C MAX 2 mA dV/dt * Linear slope up to VD =67%V DRM Gate open Tj= 125°C MIN 500 V/ µs (dI/dt)c *Without snubber Tj= 125°C MIN 6.5 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1.

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

PACKAGE : G=D 2PAK VOLTAGESENSITIVITY Add ”-TR” suffix for Tape & Reel shipment T1235-600G

P(W) α =180° α =120° α=90° α=60° α=30° I (A)T(RMS) Fig. 1:Maximum power dissipation versus RMS on-statecurrent. 0 25 50 75 100 125 I (A) T(RMS) α =180° Tcase(°C) Fig. 3:RMS on-state current versus case tem- perature. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 I ,I [Tj]/I ,I [Tj=25°C] GT H GT H IGT IH Tj(°C) Fig.5:Relativevariation of gate triggercurrentand holding current versus junction temperature (typi- cal values). 105 125 110 115 120 0 20 40 60 80 100 120 140 P(W) Tcase ( °C) α=180° Rth=0°C/WRth=2°C/WRth=4°C/WRth=6°C/W Tamb( °C) Fig. 2:Correlation between maximum power dissi- pation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) Fig. 4:Relative variation of thermal impedance versus pulse duration. 1 10 100 1000 100 120 I (A) TSM Tj initial=25°C F=50Hz Number of cycles Fig. 6:Non repetitive surge peak on-state current versus number of cycles. T1235-600G

I (A),I t(A s)TSM Tj initial=25°CITSM I t tp(ms) Fig. 7:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- respondingvalue of I2t. 0 4 8 12 16 20 24 28 32 36 400 Rth(j-a) (°C/W) S(Cu) (cm ) Fig. 9:Thermal resistance junction to ambient ver- sus coppersurfaceunder tab (Epoxyprinted circuit board FR4, copper thickness: 35µm). 100 I (A)TM Tj=25°C Tj max.: Vto=0.77V Rt=42 mΩ Tj=Tj max. V (V)TM Fig. 8:On-statecharacteristics(maximumvalues). 0 40 80 120 160 200 240 280 320 360 T( °C) 250 200 150 100 Epoxy FR4 board Metal-backed board 245°C 215°C t (s) Fig. 10:Typical reflow soldering heat profile, either for mounting on FR4 or metal-backedboards. T1235-600G

A D R 2.0 MIN. FLAT ZONE C G L B E REF. DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.40 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0 ° 8° 0° 8° Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8.90 3.70 1.30 5.08 16.90 10.30 FOOT PRINT DIMENSIONS (in millimeters) Note 1:Max resin gate protusion = 0.5 mm MARKING : T1235 600G T1235-600G