T1220W STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
® MICROELECTRONICS T1230W SNUBBERLESS TRIAC
FEATURES
a ItaMs = 12A Az Ay = Vorm = Varo = 400V to 700V a EXCELLENT SWITCHING PERFORMANCES G s INSULATING VOLTAGE = 1500V(pms) a U.L. RECOGNIZED : £81734 Py, DESCRIPTION % The T1220/1230W triacs use high performance glass passivated chip technology, housedin a fully A molded plastic ISOWATT220AB package. Az 4 The SNUBBERLESS™ concept offers suppres- sion of R-C network, and is suitable for applica- tions such as phase control and static switch on soma inductive and resistive loads. ABSOLUTE RATINGS (limiting values) [symoor[ SSeS «ae | Ui Ityams) RMS on-state current Te= 85 °C A (360° conduction angle) Itsm Non repetitive surge peak on-state current tp=16.7ms A (Tj initial = 25°C ) (1 cycle, 60 Hz) tp=10ms (1/2 cycle, 50 Hz) di/dt Critical rate of rise of on-state current Repetitive Alus Gate supply :la =500mA = die /dt = 1 A/us. F=50Hz Tstg Storage temperature range -40t0+150} °C an Operating junction temperature range - 40 to +125 TI Maximum lead temperature for soldering during 10s at 4.5 mm °C from case VpRM Repetitive peak off-state voltage 700 Vv VrRM Tj =125°C April 1995 15 mm 7929237 OO74E15 WOT
Rth{-c) | Junction to case for A.C (360° conduction angle) | 28 [ecw | GATE CHARACTERISTICS (maximum values) Pay=1W Pem=10W(tp=20 us) lam =4 A (tp = 20 us)
ELECTRICAL CHARACTERISTICS
Vo=Vorm ka = 500mA Tix 25°C TYP us dio/dt= 3Aus IRRM Varn rated dV/dt* | Linear slope up to Tj= 125°C Vins Vp=67%Vorm Gate open (aviatjc* | (alidt}c=6.5 Ams (seenote) | T= 125°C a ee * For either polarity of electrode A2 voltage with reference to electrode At Note : In usual applications where (di/dt)cis below 6.5 A/ms, the (dV/dt)c is always lower than 10V/us, and, therefore, it is unnecessary touse a snuber R-C network accross T1220W/ T1230W triacs. 2 it -THOMSON ~~" ScecTHOMEON eS mE 7929237 OO74bib 386
Fig.1 : Maximum power dissipation versus RMS Fig.2 : Correlation between maximum power dissi- on-state current. pation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. Pw) ; PW) Tease °C) 1 1 0 w ape ewl Tt) wot Te te aN ore PERS) SSSEN NTN fel ; ye bo° SET wo NENT AW ata oo NV | Lee aT NN AZYV ET fro slog. ab? | Sheet | LT NRA TT 4 [ber TT Tt} QL tT ARSNAAT re mee Za Ti TTT RS Me | | | "qrmsy (A) remo TTT | Nay ow, 23°48 6 7 8 0 10 11 42 5-40 20 30 a0 60 6070 B80 90 100110120 130 Fig.3 : RMS on-state current versus case tempera- Fig.4 : Thermal transient impedance junction to ture. case and junction to ambient versus pulse dura- gan Ter) a : — - yo Sr ee ve Spee ‘0 bf fer ee FSH oo TTI TOT 5 fry TEE EEE? N | Freee eer CTH 1
2 Tease(G} PTT ELLE aL |
a tt Le? [TT TT NI BEE 0000 0 10 20 30 40 50 60 70 80 90 100 110 120130 1E3 1E-2 1E-1 1E+0 1Est 41E+2 5E+2 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. tontT ul 'ysnfA) a EC a a ed tal NX a a a I~ a a eI a a ST Tee” ; a © ee Se a RTT a Os 20! [fp ee COT Tm -40 -20 o 20 40 60 80 100 120 140 1 10 100 1000 mM 7929237 OO74b1? 212
Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of It. Irsm(A). Pt (Are) IymA) 9,000 pre SS | SS SS a ee a Tyger te ee area 10S a a ———= eee etfs iss ts ee ee | | ——rE -( ee ee ee ee == oe t o | [seme (IA [nen 1 10 0051152253 35 445 5 55 6 48 -THOMSO mm 7929237 0074618 159 am
A “ | Min. | Max. | Min. | Max. | 7 S | ¢ | 286 | 306 | 1.126 | 1.204 | | [2 eyp | oeson | 2 e jE | 9 937 [0.354 | 0.366 | 6 ° [a [4446 [0173 [ 0781 o IRA pot fj 3 [32 | ote | 0726 | My a ae | ON] 495" [52 | 0.195 | 0.204 | [Nt 24 [27 | 0094 [0.106 | Cooling method : C Marking : Type number Weight : 2.19 Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is gantad by implication or otherwise under any patent or patent rights of SAS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to charge without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lite support devices or systems without express. written approval of SGS-THOMSON Microslectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - ‘Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7 3s-THOMSON 5/5 —— BRYA tcacnsonsmcs we 7929237 0074619 055 ml