T1235H8F SMCDIODE | Alldatasheet
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Technical content
Data Sheet N2170, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com T1235H8F T1235H8F 12A TRIACs Circuit Diagram
Description
Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range Tstg - -40-150 ℃ Operating junction temperature range Tj - -40-150 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-220F(Ins) (TC=95℃) 12 A Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM - 120 A I2t value for fusing (tp=10ms) I2t - 78 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt - 50 A/μs Peak gate current IGM - 4 A Average gate power dissipation PG(AV) - 1 W Peak gate power PGM - 5 W T1235H8F series triacs of high junction temperature with high dv/dt rate with strong resistance to electromagnetic interference provide high ability to withstand the shock loading of large current. They are especially recommended for use on inductive load and high environment temperature condition. TO-220F
Data Sheet N2170, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com T1235H8F Symbol Parameter Value(MAX) Unit VTM ITM =17A tp=380μs Tj=25℃ 1.4 V IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 2 mA Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD=12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 35 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG=1.2IGT Ⅰ-Ⅲ MAX mA Ⅱ 70 IH ITM=100mA MAX 45 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 1000 V/μs Static Characteristics Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-220F(Ins) 2.5 ℃/W
Ordering Information
T1220H8F TO-220F(Ins) 50pcs/ Tube T 12 20 H 8 F Triacs F: TO-220F(Ins) High junction temperature IT(RMS):12A 20: IGT1-3 ≤ 20mA 8:VDRM/VRRM ≥800V
Data Sheet N2170, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com T1235H8F A D E B C F Φ Max 3.5mm G Dimensions Millimeters InchesRef. A B C D E F G H 4.50 0.74 0.47 2.45 4.90 0.83 0.65 2.75 0.177 0.029 0.019 0.096 0.193 0.033 0.026 0.108 2.60 3.00 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 0.346 0.366 10.4 0.386 0.410 6.40 6.80 0.252 0.268 3.30 0.130 45° 3.63 0.143 0.80 0.031 45° H Marking Diagram Mechanical Dimensions TO-220F(Ins) Where XXXXX is YYWWL T1220H8F = Part name YY = Year WW = Week L = Lot Number
Data Sheet N2170, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com T1235H8F FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 3 6 9 12 15 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 150 TO-220F(Ins) α=180° FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 120 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 Tj=25℃ 100 100 Tj=Tjmax t=20ms One cycle FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 20 100 1000 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 160 IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 Tj (℃) dI/dt 2000 IH&ILI t2 ITSM IGT Ratings and Characteristics Curves
Data Sheet N2170, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com T1235H8F DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..