T10B LITTELFUSE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
www.littelfuse.com
FEATURES
G Glass passivated junction G High current diverting capability 250A G Low capacitance, less than 200pF APPLICATION G Bi-directional device for telephone and line card protection ELECTRICAL CHARACTERISTICS (Tamb = +25°C) 25.4 min 9.400 +0.127 -0.254 Ø5.080 +0.127 -0.254 25.4 min Ø1.016 ±0.050 T10B Voltage Holding Current Option Packaging Option B = Bulk (500 pcs) T = Tape and reeled (1500 pcs)
ORDERING INFORMATION
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm SYMBOL P Ipp Itsm di/dt T stg Tj TI PARAMETER Power dissipation on infinite heatsink Peak Pulse Current Non-repetitive surge peak on-state current Critical rate of rise of on-state current Storage and operating junction Temperature range Maximum lead temperature for soldering during 10s at 4mm from case Tamb = 50°C 10x1000µsec 10/700 1.5KV 8-20 us expo tp = 20 ms Non repetitive VALUE 100 125 250 100 -40 to 150 150 230 UNIT W A A A/us THERMAL RESISTANCES SYMBOL Rth(j-i) Rth(j-a) PARAMETER Junction-leads on infinite heatsink Junction-ambient on printed circuit L = 10mm VALUE UNIT °C/W °C/W All parameters are tested using Fet Test ™ Model 3600 All dimensions in mm DEVICE TYPE T10B035 T10B065 T10B120 T10B140 T10B200 T10B230 T10B270 I RM @ VRM max µAV 110 120 170 200 230 I R @ VR max µAV 120 140 200 230 270 VBO @ IBO max Vm A 800 800 800 800 800 800 800 160 200 265 300 350 IH min mA 150 150 150 150 150 150 150 C typ pF 180 160 140 140 130 120 120 T10B series Sibod™ PARAMETER Stand-off Voltage Breakdown Voltage Holding Current Continuous Reverse Voltage SYMBOL VRM VBR IH VR