T10B080B LITTELFUSE | Alldatasheet

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Telecom Design Guide • © 2006 Littelfuse 3 - 27 www.littelfuse.com SIDACtor Devices T10B SIDACtor® Device The bi-directional T10B devices are a through-hole technology SIDACtor protector. It is intended for cost-sensitive telecommunication applications. This T10 SIDACtor series enables equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA- 968-A (formerly known as FCC Part 68). * For surge ratings, see table below. General Notes:

  • All measurements are made at an ambient temperature of 25 °C. I PP applies to -40 °C through +85 °C temperature range.
  • I PP is a repetitive surge rating and is guaranteed for the life of the product.
  • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
  • V DRM is measured at IDRM.
  • V S is measured at 0.5 V/µs.
  • Special voltage (V S and VDRM) and holding current (IH) requirements are available upon request. * Current waveform in µs ** Voltage waveform in µs Electrical Parameters Part Number * VDRM @ 5 µA Volts VS Volts VT Volts IS mAmps IH mAmps pF TYP T10B080B 80 120 4 800 120 60 T10B080E 80 120 4 800 180 60 T10B110B 105 135 4 800 120 55 T10B110E 105 135 4 800 180 55 T10B140B 140 170 4 800 120 48 T10B140E 140 170 4 800 180 48 T10B180B 175 210 4 800 120 44 T10B180E 175 210 4 800 180 44 T10B220B 214 265 4 800 120 41 T10B220E 214 265 4 800 180 41 T10B270B 270 360 4 800 120 36 T10B270E 270 360 4 800 180 36 Surge Ratings in Amps Series IPP ITSM 50 / 60 Hz di/dt 8x20 * 1.2x50 ** 5x310 * 10x700 ** 10x1000 * 10x1000 ** Amps Amps Amps Amps Amps/µs B 250 125 100 50 100

www.littelfuse.com 3 - 28 © 2006 Littelfuse • Telecom Design Guide T10B SIDACtor® Device Thermal Considerations Package Symbol Parameter Value Unit DO-201AD T J Operating Junction Temperature Range 150 °C TS Storage Temperature Range -40 to +150 °C RθJA Thermal Resistance: Junction to Ambient 60 °C/W IH IT IS IDRM VDRMVT +V-V VS V-I Characteristics 100 tr td Peak Value Half Value t – Time (µs) IPP – Peak Pulse Current – %I PP tr = rise time to peak value td = decay time to half value Waveform = t r x td tr x td Pulse Waveform -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Percent of VS Change – % 25 ˚C Normalized VS Change versus Junction Temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Case Temperature (TC) – ˚C Ratio of IH IH (TC = 25 ˚C) 25 ˚C Normalized DC Holding Current versus Case Temperature