T1020W STMICROELECTRONICS | Alldatasheet

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T1030W November 1996 SNUBBERLESS TRIAC Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) Tc= 90°C1 0 A ITSM Non repetitive surge peak on-state current (Tjinitial = 25°C) tp = 16.7 ms (1 cycle, 60 Hz) 110 A tp = 10 ms (1/2 cycle, 50 Hz) 125 I2tI 2t Value (half-cycle, 50 Hz) tp = 10 ms 78 A 2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500 mA dI G /dt = 1 A/µs. Repetitive F = 50 Hz

20 A/ µs

Operating junction temperature range - 40 to + 150 - 40 to + 125 Tl Maximum lead temperature for soldering during 10s at 4.5 mm from case 260 °C ABSOLUTE RATINGS (limiting values) ITRMS =1 0A VDRM =V RRM = 400V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V (RMS) U.L. RECOGNIZED : E81734

FEATURES

Symbol Parameter T1020 / 1030-xxxW Unit 400 600 700 800 VDRM VRRM Repetitive peak off-state voltage Tj= 125°C 400 600 700 800 V The T1020/1030W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESS TM concept offers suppres- sion of R-C network, and is suitable for applica- tions such as phase control and static switch on inductive and resistive loads.

DESCRIPTION

(Plastic) A 1 A 2 G A 1A 2 G

PG (AV)=1W P GM =1 0W( t p=2 0µs) I GM =4A( t p=2 0µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360°conduction angle) 3.0 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant T1020 T1030 Unit IGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III MAX 20 30 mA VGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III MAX 1.5 V VGD VD =VDRM R L=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V tgt V D =VDRM IG = 500mA dlG /dt= 3Aµs Tj= 25°C I-II-III TYP 2 µs IH *I T= 100mA Gate open Tj= 25 °C MAX 35 50 VTM *I TM = 14A tp= 380µs Tj= 25 °C MAX 1.5 V IDRM IRRM VDRM rated VRRM rated Tj= 25°C MAX 10 µA Tj= 125°C MAX 2 mA dV/dt * Linear slope up to VD =67%V DRM Gate open Tj= 125°C MIN 200 300 V/ µs (dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C MIN 10 20 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1. Note :In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it isunnecessary to use a snuber R-C network accross T1020W / T1030W triacs.

ELECTRICAL CHARACTERISTICS

O = 180 o = 120 o =9 0 o =6 0 o =3 0 o T(RMS)I (A) P(W) Fig.1 :Maximum power dissipation versus RMS on-state current. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 = 180o Tcase( C) o I (A)T(RMS) Fig.3 :RMSon-state current versus case tempera- ture. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj( C)o Ih -40 -20 0 20 40 60 80 100 120 140 Igt[Tj] Igt[Tj=25 C]o Ih[Tj] Ih[Tj=25 C] o Fig.5 :Relative variation of gate trigger current and holding current versus junction temperature. P( W ) 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 14 -85 -95 -105 -115 -125 Rth = 0 C/W

2.5 C/W

o o o o Tamb ( C)o Tcase ( C)o Fig.2 :Correlation between maximum power dissi- pation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.4 :Thermal transient impedance junction to case and junction to ambient versus pulse dura- tion. 11 0 1 0 0 1000 100 120 Tj initial = 25 Co Number of cycles I (A)TSM Fig.6 :Non repetitive surge peak on-state current versus number of cycles. T1020W / 1030W

I (A). I 2 t( A2s)TSM 11 01 100 1000 Tj initial = 25 Co ITSM tp(ms) I2 t Fig.7 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp≤ 10ms, and corresponding value of I2t. 100 1000 I (A)TM Tj initial 25 Co Tj max Tj max Vto =0.9V Rt =0.038 V (V)TM Fig.8 :On-statecharacteristics (maximum values). T1020W / 1030W

Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 10 10.4 0.393 0.409 B 15.9 16.4 0.626 0.645 B1 9.8 10.6 0.385 0.417 C 28.6 30.6 1.126 1.204 D 16 typ 0.630 typ E 9 9.3 0.354 0.366 H 4.4 4.6 0.173 0.181 I 3 3.2 0.118 0.126 J 2.5 2.7 0.098 0.106 L 0.4 0.7 0.015 0.027 M 2.5 2.75 0.098 0.108 N 4.95 5.2 0.195 0.204 N1 2.4 2.7 0.094 0.106 O 1.15 1.7 0.045 0.067 P 0.75 1 0.030 0.039 T1020W / 1030W