T0805XH STMICROELECTRONICS | Alldatasheet

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T0809xH January 1995 SENSITIVE GATE TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) Tc= 95°C8 A ITSM Non repetitive surge peak on-state current (Tjinitial = 25°C) tp = 8.3 ms 73 A tp = 10 ms 70 I2tI 2t Value for fusing tp = 10 ms 24 A 2s dI/dt Critical rate of rise of on-state current IG =5 0m A d i G /dt = 0.1 A/µs. Repetitive F = 50 Hz

10 A/ µs

Storage and operating junction temperature range - 40, + 150 - 40, + 125 Tl Maximum lead temperature for soldering during 10s at 4.5mm from case 260 °C ABSOLUTE RATINGS (limiting values) IT(RMS) =8 A VDRM = 400V to 800V IGT ≤ 5mA to≤ 10mA

FEATURES

Repetitive peak off-state voltage Tj= 125°C 400 600 700 800 V The T08xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required.

DESCRIPTION

(Plastic)

PG (AV)=1W P GM =1 0W( t p=2 0µs) I GM = 4 A (tp = 20µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 °C/W Rth(j-c) Junction to case for D.C 4 °C/W Rth(j-c) Junction to case for A.C 360°conduction angle (F=50Hz) 3 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant Sensitivity Unit 05 09 IGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III-IV MAX 5 10 mA VGT VD =12V (DC) R L=33Ω Tj= 25°C I-II-III-IV MAX 1.5 V VGD VD =VDRM R L=3.3kΩ Tj= 125°C I-II-III-IV MIN 0.2 V tgt V D =VDRM IG = 40mA IT =1 1 A dIG /dt = 0.5A/µs Tj= 25°C I-II-III-IV TYP 2 µs IH * IT= 50mA Gate open Tj= 25°C MAX 5 10 mA IL IG =1 . 2IGT Tj= 25°C I-III-IV TYP 5 10 mA II TYP 10 20 VTM * ITM= 11A tp= 380µs Tj= 25°C MAX 1.65 V IDRM IRRM VD =V DRM VR =V RRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 2 mA dV/dt * VD=67%V DRM Gate open Tj= 110°C MIN 20 V/ µs TYP 10 (dV/dt)c * (dI/dt)c = 3.5 A/ms Tj= 110°C TYP 1 2 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

PACKAGE : H = TO220 Non-insulated VOLTAGESENSITIVITY T0805xH / T0809xH

O = 180 o =1 2 0 o =9 0 o =6 0 o =3 0 o T(RMS)I (A) P( W ) Fig.1 :Maximum RMS power dissipation versus RMS on-state current. 0 10 20 30 40 50 60 70 80 90 100 110 120 1300 = 180o Tcase( C) o I (A)T(RMS) Fig.3 :RMSon-state current versus case tempera- ture. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj( C)o Ih -40 -20 0 20 40 60 80 100 120 140 Igt[Tj] Igt[Tj=25 C]o Ih[Tj] Ih[Tj=25 C] o Fig.5 :Relative variation of gate trigger current and holding current versus junction temperature. 0 2 04 06 08 0 1 0 0 1 2 0 1 4 00 -95 -100 -105 -110 -115 -120 -125 P( W ) Tamb ( C)o Tcase ( C)o Rth = 0 C/W

2.5 C/W

7.5 C/W

o o o o Fig.2 :Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.4 :Relative variation of thermal impedance versus pulse duration. 1 10 100 10000 Tj initial = 25 Co Number of cycles I (A)TSM Fig.6 :Non repetitive surge peak on-state current versus number of cycles. T0805xH / T0809xH

I (A). I 2 t( A2s)TSM Tj initial = 25 Co ITSM t( m s ) I2 t Fig.7 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : t≤ 10ms, and cor- responding value of I2t. 100 I (A)TM Tj initial 25 Co Tj max Tj max Vto =1.02V Rt =0.050 V (V)TM Fig.8 :On-statecharacteristics (maximum values). T0805xH / T0809xH

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) D G I H J B A L N1 M N O P C F REF. DIMENSIONS Millimeters Inches A 10.3 0.406 B 6.3 6.5 0.248 0.256 C 9.1 0.358 D 12.7 0.500 F 4.2 0.165 G 3.0 0.118 H 4.5 4.7 0.177 0.185 I 3.53 3.66 0.139 0.144 J 1.2 1.3 0.047 0.051 L 0.9 0.035 M 2.7 0.106 N 5.3 0.209 N1 2.54 0.100 O 1.2 1.4 0.047 0.055 P 1.15 0.045 Marking : type number Weight : 1.8 g T0805xH / T0809xH