SX040K SMCDIODE | Alldatasheet
Document overview
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Technical content
Data Sheet N2045, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SX040K SX040K Sensitive gate SCRs Circuit Diagram
Description
Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -40 to +110 C Operating junction temperature range Tstg - -40 to +150 C Repetitive peak off-state voltage VDRM - 600 V Repetitive peak reverse voltage VRRM - 600 V RMS on-state current I(TRMS) DPAK(TC=90℃) 4 A Non repetitive surge peak on-state current (tp=10ms) ITSM - 30 A I2t value for fusing (tp=10ms) I2t - 4.5 A2s Critical rate of rise of on-state current dI/dt - 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM - 1.2 A Peak gate power (tp=20μs, Tj=110℃) PGM - 2 W Average gate power dissipation(Tj=110℃) PG(AV) - 0.2 W Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol Condition Min. Typ. Max. Units IGT VD=12V RL=33Ω - 50 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA dV/dt VD=2/3VDRM Tj=110℃ RGK=1KΩ 10 - - V/μs The SX040K provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on straight hair, igniter etc. DPAK
Data Sheet N2045, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SX040K Static Characteristics Symbol Condition Max. Units VTM ITM=8A tp=380μs,Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 5 μA IRRM VD=VDRM VR=VRRM, Tj=110℃ 100 μA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case DPAK 6.5 ℃/W
Ordering Information
SX040KTR DPAK 2500pcs/ reel Marking Diagram S X 040 K SMC Diode Solutions Sensitive gate SCRs K:DPAK IT(RMS):4A Where XXXXX is YYWWL S = SMC X = Sensitive gate SCRs 040 = Forward Current 4A) K = Package type YY = Year WW = Week L = Lot Number
Data Sheet N2045, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SX040K FIG.3: Surge peak on-state current versus number of cycles FIG.1: Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) TO-252-4R P(w) 0 1 2 3 4 5 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0.1 Tj=25℃ Tj=Tjmax α=180° One cycle tp=10ms Mechanical Dimensions DPAK SYMBOL Millimeters Inches A 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 D1 5.30REF 0.209REF E 6.40 6.80 0.252 0.268 E1 4.63 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 V1 7° 7° V2 0° 6° 0° 6° Ratings and Characteristics Curves
Data Sheet N2045, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SX040K FIG.3: Surge peak on-state current versus number of cycles FIG.1: Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) TO-252-4R P(w) 0 1 2 3 4 5 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0.1 Tj=25℃ Tj=Tjmax α=180° One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 100 400 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 Tj(℃) IGT IH&IL dI/dt ITSM I t
Data Sheet N2045, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SX040K DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..