SX020V SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2044, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX020V SX020V Sensitive gate SCRs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -40 to +110 C Operating junction temperature range Tstg - -40 to +150 C Repetitive peak off-state voltage VDRM - 600 V Repetitive peak reverse voltage VRRM - 600 V RMS on-state current I(TRMS) SOT-233(TC=80℃) 2 A Non repetitive surge peak on-state current(tp=10ms) ITSM - 20 A I2t value for fusing (tp=10ms) I2t - 2 A2s Critical rate of rise of on-state current dI/dt - 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM - 0.2 A Peak gate power (tp=20μs, Tj=110℃) PGM - 0.5 W Average gate power dissipation(Tj=110℃) PG(AV) - 0.1 W The SX020V provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. SOT-223

Data Sheet N2044, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX020V Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol Condition Min. Typ. Max. Units IGT VD=12V RL=33Ω - 50 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA dV/dt VD=2/3VDRM Tj=110℃ RGK=1KΩ 20 - - V/μs Static Characteristics Symbol Condition Max. Units VTM ITM=4A tp=380μs,Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 5 μA IRRM VD=VDRM VR=VRRM, Tj=110℃ 100 μA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case SOT-233 7.3 ℃/W

Ordering Information

SX020V SOT-223 4000pcs/ reel SX020VTR SOT-223 4000pcs/ reel S X 020 V SMC Diode Solutions Sensitive gate SCRs V:SOT-223 IT(RMS):2A

Data Sheet N2044, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX020V FIG.3: Surge peak on-state current versus number of cycles FIG.1: Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0.1 20 20 Tj=25℃ Tj=Tjmax SOT-223 α=180° One cycle tp=10ms Marking Diagram Mechanical Dimensions SOT-223 SYMBO L Millimeters Inches F 4.6 0.181 F1 2.3 0.091 Ratings and Characteristics Curves Where XXXXX is YYWWL S = SMC X = Sensitive gate SCRs 020 = Forward Current (2A) V = Package type YY = Year WW = Week L = Lot Number

Data Sheet N2044, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX020V FIG.3: Surge peak on-state current versus number of cycles FIG.1: Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0.1 20 20 Tj=25℃ Tj=Tjmax SOT-223 α=180° One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 100 300 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 I t Tj (℃) IGT IH&IL ITSM dI/dt

Data Sheet N2044, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX020V DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..