SW065R68E7T SEMIPOWER | Alldatasheet

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Technical content

Features

 High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter

Source to drain diode ratings characteristics Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 68 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.05 V/oC IDSS Drain to source leakage current VDS=68V, VGS=0V 1 uA VDS=54V, TJ=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2 4 V RDS(ON) Drain to source on state resistance VGS=10V, ID=30A,TJ=25oC 6.3 7.5 mΩ VGS=10V, ID=50A,TJ=25oC 6.5 7.6 mΩ VGS=10V, ID=30A,TJ=125oC 11 mΩ Gfs Forward transconductance VDS=5V, ID=30A 71 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=34V, f=1MHz 3502 pF Coss Output capacitance 255 Crss Reverse transfer capacitance 220 td(on) Turn on delay time VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) ns tr Rising time 49 td(off) Turn off delay time 72 tf Fall time 26 Qg Total gate charge VDS=54.4V, VGS=10V, ID=30A , IG=5mA (note 4,5) nC Qgs Gate-source charge 14 Qgd Gate-drain charge 27 Rg Gate resistance VDS=0V, Scan F mode 3 Ω Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 90 A ISM Pulsed source current 360 A VSD Diode forward voltage drop. IS=6A, VGS=0V 1.4 V trr Reverse recovery time IS=30A, VGS=0V, dIF/dt=100A/us 20 ns Qrr Reverse recovery charge 10 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =30A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature.

Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 4. On-state current vs. diode forward voltage Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature

Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area Fig. 10. Transient thermal response curve

10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 12. Switching time test circuit & waveform Fig. 11. Gate charge test circuit & waveform Fig. 13. Unclamped Inductive switching test circuit & waveform

  • All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Fig. 14. Peak diode recovery dv/dt test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD