SW051R08ES SEMIPOWER | Alldatasheet
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High ruggedness Low RDS(ON) (Typ 5.1mΩ)@VGS=10V Low Gate Charge (Typ 44nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 80V ID : 120A RDS(ON) : 5.1mΩ 1 2 TO-263 1 2 TO-220
Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 80 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.03 V/oC IDSS Drain to source leakage current VDS=80V, VGS=0V 1 uA VDS=64V, TC=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2 4 V RDS(ON) Drain to source on state resistance VGS=10V, ID=60A 5.2 6.5 mΩ VGS=10V, ID=120A 5.1 6.4 Gfs Forward transconductance VDS=10V, ID=30A 63 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=40V, f=1MHz 3670 pF Coss Output capacitance 889 Crss Reverse transfer capacitance 14 td(on) Turn on delay time VDS=40V, ID=30A, RG=25Ω, VGS=10V (note 4,5) ns tr Rising time 76 td(off) Turn off delay time 104 tf Fall time 56 Qg Total gate charge VDS=64V, VGS=10V, ID=30A (note 4,5) nC Qgs Gate-source charge 18 Qgd Gate-drain charge 6 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 120 A ISM Pulsed source current 480 A VSD Diode forward voltage drop. IS=120A, VGS=0V 1.4 V trr Reverse recovery time IS=30A, VGS=0V, dIF/dt=100A/us 52 ns Qrr Reverse recovery charge 60 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =1.1mH, IAS =30A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature.
drain current and gate voltage forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature
Fig. 7. Maximum safe operating area(TO-263) Fig. 8. Maximum safe operating area(TO-220) Fig. 9. Capacitance Characteristics Fig. 10. Transient thermal response curve(TO-263)
Fig. 12. Gate charge test circuit & waveform Fig. 11. Transient thermal response curve(TO-220) VDD DUT VDS RL RGS 10VIN 10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 13. Switching time test circuit & waveform
Fig. 15. Peak diode recovery dv/dt test circuit & waveform Fig. 14. Unclamped Inductive switching test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD
- All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com