SW030R04VT SEMIPOWER | Alldatasheet

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 High ruggedness  Low RDS(ON) (Typ 2.8mΩ)@VGS=10V (Typ 3.7mΩ)@VGS=4.5V  Low Gate Charge (Typ 120nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Power Supply,LED Boost General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 40V ID : 130A RDS(ON) : 2.8mΩ@VGS=10V 3.7mΩ@VGS=4.5V TO-220 1 2

Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 40 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.02 V/oC IDSS Drain to source leakage current VDS=40V, VGS=0V 1 uA VDS=32V, TC=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 1 3 V RDS(ON) Drain to source on state resistance VGS=10V, ID=130A 2.9 3.6 mΩ VGS=10V, ID=65A 2.8 3.5 mΩ VGS=4.5V, ID=65A 3.7 4.6 mΩ Gfs Forward transconductance VDS=10V, ID=30A 140 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=20V, f=1MHz 5350 pF Coss Output capacitance 686 Crss Reverse transfer capacitance 644 td(on) Turn on delay time VDS=20V, ID=30A, RG=25Ω, VGS=10V (note 4,5) ns tr Rising time 123 td(off) Turn off delay time 396 tf Fall time 210 Qg Total gate charge VDS=32V, VGS=10V, ID=30A (note 4,5) 120 nC Qgs Gate-source charge 17 Qgd Gate-drain charge 35 Rg Gate resistance VDS=0V, Scan F mode 1.3 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 130 A ISM Pulsed source current 520 A VSD Diode forward voltage drop. IS=30A, VGS=0V 1.4 V trr Reverse recovery time IS=30A, VGS=0V, dIF/dt=100A/us 29 ns Qrr Reverse recovery charge 19 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =1.84mH, IAS =30A, VDD=30V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature.

drain current and gate voltage forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature

Fig. 7. Maximum safe operating area Fig. 9. Transient thermal response curve Fig. 8. Capacitance Characteristics Fig. 10. Gate charge test circuit & waveform

10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 11. Switching time test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform Fig. 12. Unclamped Inductive switching test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD

  • All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com