SW029R04ET SEMIPOWER | Alldatasheet

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 High ruggedness  Low RDS(ON) (Typ 2.5mΩ)@VGS=10V  Low Gate Charge (Typ 151nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC Converter,Motor Control Synchronous Rectification General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 40V ID : 120A RDS(ON) :2.5mΩ TO-220 1 2 TO-263 1 2

Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 40 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.03 V/oC IDSS Drain to source leakage current VDS=40V, VGS=0V 1 uA VDS=32V, TC=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2 4 V RDS(ON) Drain to source on state resistance VGS=10V, ID=60A 2.5 3.1 mΩ VGS=10V, ID=120A 2.6 3.2 mΩ Gfs Forward transconductance VDS=5V, ID=60A 145 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=20V, f=1MHz 6390 pF Coss Output capacitance 1630 Crss Reverse transfer capacitance 1320 td(on) Turn on delay time VDS=20V, ID=30A, RG=25Ω, VGS=10V (note 4,5) ns tr Rising time 257 td(off) Turn off delay time 263 tf Fall time 286 Qg Total gate charge VDS=32V,VGS=10V,ID=30A, Ig=4mA (note 4,5) 151 nC Qgs Gate-source charge 26 Qgd Gate-drain charge 71 Rg Gate resistance VDS=0V, Scan F mode 1.2 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 120 A ISM Pulsed source current 480 A VSD Diode forward voltage drop. IS=120A, VGS=0V 1.4 V trr Reverse recovery time IS=30A, VGS=0V, dIF/dt=100A/us 45 ns Qrr Reverse recovery charge 36 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =5.13mH, IAS =30A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature.

Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Fig. 2. Transfer characteristics

Fig. 9. Maximum safe operating area(TO-220) Fig. 11. Transient thermal response curve(TO-220) Fig. 8. Capacitance Characteristics Fig. 7. Gate charge characteristics Fig. 10. Maximum safe operating area(TO-263)

10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 14. Switching time test circuit & waveform Fig. 13. Gate charge test circuit & waveform Fig. 12. Transient thermal response curve(TO-263)

  • All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Fig. 16. Peak diode recovery dv/dt test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD Fig. 15. Unclamped Inductive switching test circuit & waveform