SW026R03VT SEMIPOWER | Alldatasheet

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Symbol Parameter Value Unit VDSS Drain to source voltage 30 V ID Continuous drain current (@TC=25oC) 80* A Continuous drain current (@TC=100oC) 50* A IDM Drain current pulsed (note 1) 320 A VGS Gate to source voltage ± 20 V EAS Single pulsed avalanche energy (note 2) 398 mJ EAR Repetitive avalanche energy (note 1) 18 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns PD Total power dissipation (@TC=25oC) 1.4 W Derating factor above 25oC 0.01 W/oC TSTG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC Thermal characteristics Symbol Parameter Value Unit Rthja Thermal resistance, Junction to ambient 88 oC/W *. Drain current is limited by junction temperature. Order Codes Item Sales Type Marking Package Packaging

1 SW HA 026R03VT SW026R03VT DFN5*6 REEL

N-channel Enhanced mode DFN5*6 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 3.5mΩ)@VGS=4.5V (Typ 3.0mΩ)@VGS=10V  Low Gate Charge (Typ 113nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC Converter, Inverter, Synchronous Rectification General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 30V ID : 80A RDS(ON) : 3.5mΩ@VGS=4.5V 3.0mΩ@VGS=10V G(4) D(5,6,7,8) S(1,2,3) DFN5*6 Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's board design. 88oC/W on a 1 in2 pad of 2oz copper.

Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 30 V ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC 0.02 V/oC IDSS Drain to source leakage current VDS=30V, VGS=0V 1 uA VDS=24V, TC=125oC 50 uA IGSS Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 1 1.8 V RDS(ON) Drain to source on state resistance VGS=4.5V, ID=40A 3.5 4.4 mΩ VGS=10V, ID=40A 3.0 3.8 mΩ VGS=10V, ID=80A 3.0 3.8 mΩ Gfs Forward transconductance VDS=5V, ID=40A 122 S Dynamic characteristics Ciss Input capacitance VGS=0V, VDS=15V, f=1MHz 5580 pF Coss Output capacitance 742 Crss Reverse transfer capacitance 736 td(on) Turn on delay time VDS=15V, ID=30A, RG=25Ω, VGS=10V (note 4,5) ns tr Rising time 87 td(off) Turn off delay time 413 tf Fall time 211 Qg Total gate charge VDS=24V, VGS=10V, ID=30A (note 4,5) 113 nC Qgs Gate-source charge 12 Qgd Gate-drain charge 28 Rg Gate resistance VDS=0V, Scan F mode 2.2 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IS Continuous source current Integral reverse p-n Junction diode in the MOSFET 80 A ISM Pulsed source current 320 A VSD Diode forward voltage drop. IS=80A, VGS=0V 1.4 V trr Reverse recovery time IS=30A, VGS=0V, dIF/dt=100A/us 21 ns Qrr Reverse recovery charge 6 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =1.1mH, IAS =27A, VDD=20V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature.

Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Fig. 2. On-state characteristics Fig. 4. On-state current vs. diode forward voltage

Fig. 9. Maximum safe operating area Fig. 10. Transient thermal response curve Fig. 8. Capacitance Characteristics Fig. 7. Gate charge characteristics

10% VDS VIN 90% 10% td(on) tr tON td(off) tOFF tf Fig. 12. Switching time test circuit & waveform Fig. 13. Unclamped Inductive switching test circuit & waveform Fig. 11. Gate charge test circuit & waveform

  • All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Fig. 14. Peak diode recovery dv/dt test circuit & waveform VDD Same type as DUT VDS L RG 10VGS IS VDS DUT *. dv/dt controlled by RG *. Is controlled by pulse period VGS (DRIVER) IS (DUT) VDS (DUT) Body diode forward voltage drop VF Diode recovery dv/dt IRM di/dt 10V Diode reverse current VDD