SVT078R0ND UMW | Alldatasheet

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VDS =68V,ID =88A RDS(ON),6.3mΩ(Typ)@VGS =10V Low On-Resistance Low gate charge Fastswitching Low reverse transfer capacitances 100%single pulse avalancheenergy test 100% ΔVDS test Application Power switching applications DC-DCconverters UPS power supply PackageMarkingandOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity SVT078R0ND TO-252 330mm 12mm 2500 AbsoluteMaximum Ratings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 68 V Gate-SourceVoltage VGS ±20 V DrainCurrent-ContinuousNote3 TC=25℃ ID 88 A TC=100℃ 61 A DrainCurrent-PulsedNote1 IDM 292 A AvalancheEnergyNote4 EAS 550 mJ MaximumPowerDissipation TC=25℃ PD 167 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction toCase-sink RθJC - - 0.9 ℃/W ThermalResistance,Junction toAmbient RθJA - - 75 ℃/W U MW SVT078R0ND R UMW SVT078R0ND SVT078R0ND 1www.umw-ic.com 友台半导体有限公司

ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 68 - - V Zero GateVoltage DrainCurrent IDSS VDS=68V,VGS=0V - - 1.0 uA Gate-BodyLeakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThreshold Voltage VGS(TH) VDS=VGS,IDS=250uA 2.5 3.0 3.5 V Drain-SourceOn-State Resistance RDS(ON) VGS=10V,IDS=30A - 6.3 7.5 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=30V,VGS=0V, f=1MHz - 4100 - pFOutputCapacitance COSS - 323 - ReverseTransfer Capacitance Crss - 242 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VDS=30V,ID=30A, VGS=10V,RGEN=6Ω - 25.5 - ns RiseTime tr - 92.9 - Turn-OffDelayTime Td(off) - 74.3 - FallTime tf - 70.4 - TotalGate Charge at10V Qg VDS=30V,IDS=20A, VGS=10V - 86 - nCGateto SourceGate Charge Qgs - 24.3 - Gateto Drain“Miller”Charge Qgd - 26.4 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=30A - - 1.3 V Reverse RecoveryTime trr IF=50A,dI/dt=100A/us - 27.9 - nS Reverse RecoveryCharge Qrr - 33.6 - nC Notes: 1:Repetitive rating, pulsewidth limited bymaximum junction temperature. 2:Surface mountedon FR4Board,t≤10sec. 3:Pulse width≤300μs,duty cycle ≤2%. U MW SVT078R0ND R www.umw-ic.com 2 友台半导体有限公司

Typicalcharacteristicsdiagrams U MW SVT078R0ND R www.umw-ic.com 3 友台半导体有限公司

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TypicalTestCircuitandWaveform U MW SVT078R0ND R www.umw-ic.com 5 友台半导体有限公司

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U MW SVT078R0ND R www.umw-ic.com 7 友台半导体有限公司