SVF9N90F

SVF9N90T THINKISEMI | Alldatasheet

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Technical content

Features

(on) (1.40 Ω )@V GS =10V,ID=4A Low Gate Charge (Typical 45nC) Low Crss (Typical 14pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. This Power MOSFET is produced using ThinkiSemi's advanced 1 2 3 TO-220F-3L Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature Symbol Parameter Unit V DSS Drain-Source Voltage 900 V I D Drain Current - Continuous (T C - Continuous (T C I DM Drain Current - Pulsed (Note 1) 32 32 * A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 900 mJ I AR Avalanche Current (Note 1) 8.0 A E AR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.0 V/ns

P D Power Dissipation (T C = 25°C) 205 68 W - Derate above 25°C 1.64 0.54 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter Unit R θJC Thermal Resistance, Junction-to-Case 0.61 1.85 °C /W R θJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C /W (SVF9N90T) (SVF9N90F) SVF9N90T SVF9N90F SVF9N90T SVF9N90F

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/8Rev.10T

Electrical Characteristics

T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21 mH, I AS = 9A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 9.0A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 900 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.99 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 900 V, V GS = 0 V -- -- 10 µA V DS = 720 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D g FS Forward Transconductance V DS = 40 V, I D = 4 A (Note 4) -- 9.2 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 2100 2730 pF C oss Output Capacitance -- 175 230 pF C rss Reverse Transfer Capacitance -- 14 18 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 450 V, I D = 9.0A, R G = 25 Ω (Note 4, 5) -- 50 110 ns t r Turn-On Rise Time -- 120 250 ns t d(off) Turn-Off Delay Time -- 100 210 ns t f Turn-Off Fall Time -- 75 160 ns Q g Total Gate Charge V DS = 720 V, I D = 9.0A, V GS = 10 V (Note 4, 5) -- 45 58 nC Q gs Gate-Source Charge -- 13 -- nC Q gd Gate-Drain Charge -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.0 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 8 A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0 V, I S = 9 A, dI F / dt = 100 A/µs (Note 4) -- 550 -- ns Q rr Reverse Recovery Charge -- 6.5 -- µC SVF9N90T/SVF9N90F

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 6/8Rev.10T Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms SVF9N90T/SVF9N90F

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 7/8Rev.10T Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width SVF9N90T/SVF9N90F

TO-220C-3L PACKAGE OUTLINE Dimensions(millimeters) Symbol Min. Max. A 4.30 4.70 A1 1.17 1.37 A2 2.20 2.60 b 0.60 1.00 b1 1.17 1.37 b2 1.90 2.30 c 0.30 0.70 e 2.34 2.74 E 9.70 10.1 E1 8.50 8.90 H 15.5 15.9 H1 9.00 9.40 H2 1.10 1.50 H3 1.50 1.90 H4 12.58 13.58 H5 2.80 3.20 G 2.60 3.00 ФP 3.40 3.80 Symbol Dimensions(millimeters) Min. Max. A 4.35 4.75 A1 2.30 2.70 A2 0.40 0.80 A3 2.10 2.50 b 0.60 1.00 b1 1.00 1.40 c 0.30 0.70 e 2.30 2.70 E 9.80 10.2 E1 6.30 6.70 H 15.6 16.0 H1 8.80 9.20 H2 12.9 13.5 H3 3.10 3.50 G 3.10 3.50 ФP 3.10 3.50 TO-220F-3L PACKAGE OUTLINE © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 8/8Rev.10T SVF9N90T/SVF9N90F