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Features

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Designed for Low−V oltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
  • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk Drain Current Dr− Continuous @ Ta = 25°C Dr− Single Pulse (tp ≤ 10 ms) ID IDM −12 −18 Adc Apk Total Power Dissipation @ Ta = 25°C PD 55 W Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 /C0087) EAS 216 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) R/C0113JC R/C0113JA R/C0113JA 2.73 71.4 100 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in 2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). D S G P−Channel www.onsemi.com −60 V 155 m/C0087 @ −10 V, 6 A RDS(on) TYP −12 A ID MAXV(BR)DSS A = Assembly Location* NT2955/NV2955 = Specific Device Code (DPAK ) NT2955 = Specific Device Code (IPAK) Y = Year WW = Work Week G = Pb−Free Package Gate Source Drain Drain DPAK CASE 369C STYLE 2 1 2 IPAK CASE 369D STYLE 2 2 3 AYWW NT 2955G See detailed ordering and shipping information on page 5 of this data sheet.

ORDERING INFORMATION

& PIN ASSIGNMENTS * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank.

NTD2955, NVD2955 www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = −0.25 mA) (Positive Temperature Coefficient) V(BR)DSS −60 Vdc mV/°C Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C) IDSS −10 −100 /C0109Adc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − −100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 /C0109Adc) (Negative Temperature Coefficient) VGS(th) −2.0 −2.8 4.5 −4.0 Vdc mV/°C Static Drain−Source On−State Resistance (VGS = −10 Vdc, ID = −6.0 Adc) RDS(on) − 0.155 0.180 /C0087 Drain−to−Source On−Voltage (VGS = −10 Vdc, ID = −12 Adc) (VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C) VDS(on) −1.86 −2.6 −2.0 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS 8.0 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Ciss − 500 750 pF Output Capacitance Coss − 150 250 Reverse Transfer Capacitance Crss − 50 100 SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time (VDD = −30 Vdc, ID = −12 A, VGS = −10 V, RG = 9.1 /C0087) td(on) − 10 20 ns Rise Time tr − 45 85 Turn−Off Delay Time td(off) − 26 40 Fall Time tf − 48 90 Gate Charge (VDS = −48 Vdc, VGS = −10 Vdc, ID = −12 A) QT − 15 30 nC QGS − 4.0 − QGD − 7.0 − DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150°C) VSD −1.6 −1.3 −2.5 Vdc Reverse Recovery Time (IS = 12 A, dIS/dt = 100 A//C0109s ,VGS = 0 V) trr − 50 ns ta − 40 − tb − 10 − Reverse Recovery Stored Charge QRR − 0.10 − /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Indicates Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature.

NTD2955, NVD2955 www.onsemi.com Figure 13. Thermal Response Device Package Shipping† NTD2955G DPAK (Pb−Free)

75 Units / Rail

NTD2955−1G IPAK (Pb−Free) (Pb−Free) 2500 / Tape & Reel NVD2955T4G* DPAK (Pb−Free) 2500 / Tape & Reel SVD2955T4G* DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.

NTD2955, NVD2955 www.onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN b D E M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. 12 3 H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 e BOTTOM VIEW Z BOTTOM VIEW SIDE VIEW TOP VIEW ALTERNATE CONSTRUCTIONS NOTE 7 Z

NTD2955, NVD2955 www.onsemi.com PACKAGE DIMENSIONS 123 V S A K −T− SEATING PLANE R B F G D 3 PL M0.13 (0.005) T C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Z IPAK CASE 369D ISSUE C STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NTD2955/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative