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Technical content

Features

  • Planar HD3e Process for Fast Switching Performance
  • Low RDS(on) to Minimize Conduction Loss
  • Low Ciss to Minimize Driver Loss
  • Low Gate Charge
  • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
  • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C, Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp ≤ 10 /C0109s) R/C0113JC PD ID ID ID 6.0 20.8 11.4 °C/W W A A A Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ T A = 25°C Drain Current − Continuous @ TA = 25°C R/C0113JA PD ID 1.56 3.1 °C/W W A Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C R/C0113JA PD ID 120 1.04 2.5 °C/W W A Operating and Storage Temperature Range TJ, Tstg −55 to 150 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. www.onsemi.com

14 AMPERES, 25 VOLTS

RDS(on) = 70.4 m/C0087 (Typ) D S G N−CHANNEL MARKING DIAGRAM & PIN ASSIGNMENTS A = Assembly Location* Y = Year WW = Work Week 14N03 = Device Code G = Pb−Free Package DPAK CASE 369C (Surface Mount) STYLE 2 AYWW T14 N03G

4 Drain

See detailed ordering and shipping information on page 5 of this data sheet.

ORDERING INFORMATION

  • The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank.

NTD14N03R, NVD14N03R www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 /C0109Adc) Temperature Coefficient (Positive) V(br)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS 1.0 /C0109Adc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 /C0109Adc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.5 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (Note 3) (VGS = 4.5 Vdc, ID = 5 Adc) (VGS = 10 Vdc, ID = 5 Adc) RDS(on) 117 70.4 130 m/C0087 Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 5 Adc) gFS − 7.0 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Ciss − 115 − pF Output Capacitance Coss − 62 − Transfer Capacitance Crss − 33 − SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 5 Adc, RG = 3 /C0087) td(on) − 3.8 − ns Rise Time tr − 27 − Turn−Off Delay Time td(off) − 9.6 − Fall Time tf − 2.0 − Gate Charge (VGS = 5 Vdc, ID = 5 Adc, VDS = 10 Vdc) (Note 3) QT − 1.8 − nC Q1 − 0.8 − Q2 − 0.7 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 5 Adc, VGS = 0 Vdc) (Note 3) (IS = 5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.93 0.82 1.2 Vdc Reverse Recovery Time (IS = 5 Adc, VGS = 0 Vdc, dIS/dt = 100 A//C0109s) (Note 3) trr − 6.6 − ns ta − 4.75 − tb − 1.88 − Reverse Recovery Stored Charge QRR − 0.002 − /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

5 V10 V

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus Figure 11. Maximum Rated Forward Biased

0 V < VGS < 20 V

NTD14N03R, NVD14N03R www.onsemi.com TYPICAL CHARACTERISTICS 0.01 0.1 100 0.1 0.2 0.02 D = 0.5 0.05 0.01 SINGLE PULSE R(t) (°C/W) t, TIME (s) Figure 12. Thermal Response Device Package Shipping† NTD14N03RT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD14N03RT4G* DPAK (Pb−Free) 2500 / Tape & Reel SVD14N03RT4G* DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.

NTD14N03R, NVD14N03R www.onsemi.com PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 /C0466mm inches/C0467SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN b D E M0.005 (0.13) C A c C Z DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46 L 0.055 0.070 1.40 1.78 L3 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY . 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. 12 3 H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC HDETAIL A SEATING PLANE A B C L H L2 GAUGE PLANE DETAIL A ROTATED 90 CW/C0053 e BOTTOM VIEW Z BOTTOM VIEW SIDE VIEW TOP VIEW ALTERNATE CONSTRUCTIONS NOTE 7 Z ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NTD14N03R/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative