SVA-541-DG+

SAV-541-D MINI | Alldatasheet

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Technical content

Ultra Low Noise, Medium Current E-PHEMT Die Page 1 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits SAV-541-D+ REV. OR M155842 SAV-541-D+ RS/CP 160407 Product Features

• Low Noise Figure, 0.4 dB
• Gain, 17 dB at 2 GHz
• High Output IP3, +33 dBm
• Output Power at 1dB comp., +21 dBm
• High Current, 15 to 60mA
• Wide bandwidth
• External biasing and matching required Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN Pad Description Source Ground Gate RF-IN Drain RF-OUT General Description SAV-541-D+ is an ultra-low noise, high IP3 transistor die, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. DRAIN GATE SOURCE * Enhancement mode Pseudomorphic High Electron Mobility Transistor. +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page 50Ω 0.45 to 6 GHz Simplified Schematic and Pad description

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Symbol Parameter Condition Typical Units IDSS Drain Current 15 30 60 mA VGS Operational Gate Voltage VDS=3V, at respective IDS 0.34 0.39 0.48 V VTH Threshold Voltage VDS=3V, IDS=4 mA 0.26 0.26 0.26 V IDSS Saturated Drain Current VDS=3V, VGS=0 V 1.0 1.0 1.0 µA GM Transconductance VDS=3V, Gm=∆ IDS/∆VGS ∆VGS=VGS1-VGS2 VGS1=VGS at respective IDS VGS2=VGS1+0.05V 251 327 392 mS 4. Operation of this device above any one of these parameters may cause permanent damage. 5. Assumes DC quiescent conditions. 6. IGS is limited to 2 mA during test. Absolute Maximum Ratings4 Symbol Parameter Max. Units VDS5 Drain-Source Voltage 5 V VGS5 Gate-Source Voltage -5 to 0.7 V VGD5 Gate-Drain Voltage -5 to 0.7 V IDS5 Drain Current 120 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 360 mW PIN6 RF Input Power 17 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C ΘJC Thermal Resistance 160 °C/W Symbol Parameter Condition (GHz) VDS=3V VDS=4V, Units IDS=15mA IDS=30mA IDS=60mA IDS=15mA IDS=30mA IDS=60mA Gain Gain OIP3 Output IP3 P1dB3 Power output at 1 dB Compression 1. Measured on industry standard SOT-343 (SC-70) package. 2. Measured on die using GSG (Ground-Signal-Ground) probe. See figure 1. 3. Drain current was allowed to increase during compression measurements.

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Assembly Diagram Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC EPHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s cure condition. It is recommended to use antistatic die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Recommended Wire Length, Typical Wire Wire Length (mm) Wire Loop Height (mm) GATE, DRAIN 0.70 0.15 SOURCE (TO GROUND) 0.30 0.15

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ESD Rating Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999 Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension(.zip file) Case Style Die Die Ordering and packaging information Quantity, Package Model No. Small, Gel - Pak: 10,50,100 KGD* Medium†, Partial wafer: KGD*<5K SVA-541-DG+ SVA-541-DP+ Refer to AN-60-067 Environmental Ratings ENV-80 Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Dice. F . Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini- Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such third-party of Mini-Circuits or its products. Additional Detailed Technical Information additional information is available on our dash board. ** Tested in industry standard 6-lead 400µmx400µm package.